Annealing of Amorphous Ni-Nb/Cu Overlayer Films - Thermal Groove Kinetics

1990 ◽  
Vol 181 ◽  
Author(s):  
S. N. Farrens ◽  
J. H. Perepczko
Keyword(s):  
Diffusion Processes ◽  
Effective Diffusion ◽  
Amorphous Film ◽  
Cross Sectional ◽  
Annealing Behavior ◽  
Cu Films ◽  
Cu Film ◽  
Sputter Deposited ◽  
Kinetics Of ◽  
Microstructural Examination

ABSTRACTRecent studies have shown that sputter deposited amorphous NixNb1−x (60≤×≤75) alloy films are effective diffusion barriers for operation at temperatures up to 6(X) °C[1]. The thermal stability of the amorphous films has been established on Si and GaAs substrates and may be modified by interactions wilji polycrystalline metal overlayer films. In the current work a detailed microstructural examination by cross-sectional TEM was performed on the annealing behavior of 50 nm polycrystalline Cu films on amorphous Ni60Nb40. Specifically, the development of grooves at the intersection of grain boundaries in the Cu film with both the free surface and the amorphous Ni60Nb40 base was monitored to evaluate the low temperature interfacial diffusion processes. Based upon measurements of the groove dimensions and dihedral angle during vacuum annealing at 450 °C, the surface diffusion coefficient of Cu was determined as 7.4 × 10-20 m2/sec and the surface energy for Cu derived from groove kinetics was in good agreement with other reported determinations. In addition, the grain boundary grooves that were present at the Cu/amorphous Ni60Nb40 interface in the as-deposited condition were observed to be eliminated during annealing. Again, by following the kinetics of groove healing the interfacial diffusivity was determined to be of the order of 10-28m2/sec at 500 °C and the interfacial energy for the amorphous film/Cu surface was estimated to be ≥ 340 mJ/cm2. The benefits of utilizing amorphous Ni-Nb alloys as underlays to retard thermal grooving and electromigration failure in copper arc discussed.

scholarly journals Nanoindentation of Au and Pt/Cu thin films at elevated temperatures

2004 ◽  
Vol 19 (9) ◽  
pp. 2650-2657 ◽  
Author(s):  
Alex A. Volinsky ◽  
Neville R. Moody ◽  
William W. Gerberich
Keyword(s):  
Thin Films ◽  
Elastic Modulus ◽  
Yield Stress ◽  
Elevated Temperatures ◽  
Nanocrystalline Structure ◽  
Cu Films ◽  
Interfacial Toughness ◽  
Film Hardness ◽  
Cu Film ◽  
Sputter Deposited

This paper describes the nanoindentation technique for measuring sputter-deposited Au and Cu thin films’ mechanical properties at elevated temperatures up to 130 °C. A thin, 5-nm Pt layer was deposited onto the Cu film to prevent its oxidation during testing. Nanoindentation was then used to measure elastic modulus and hardness as a function of temperature. These tests showed that elastic modulus and hardness decreased as the test temperature increased from 20 to 130 °C. Cu films exhibited higher hardness values compared to Au, a finding that is explained by the nanocrystalline structure of the film. Hardness was converted to the yield stress using both the Tabor relationship and the inverse method (based on the Johnson cavity model). The thermal component of the yield-stress dependence followed a second-order polynomial in the temperature range tested for Au and Pt/Cu films. The decrease in yield stress at elevated temperatures accounts for the increased interfacial toughness of Cu thin films.

Stress Gradients Observed in Cu Thin Films Induced by Capping Layers

2009 ◽  
Vol 1156 ◽  
Author(s):  
Conal E. Murray ◽  
Paul R. Besser ◽  
Christian Witt ◽  
Jean L. Jordan-Sweet
Keyword(s):  
Deposition Temperature ◽  
Morphological Changes ◽  
Film Surface ◽  
Stress Distributions ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Cu Films ◽  
Transmission Electron ◽  
Cu Film

AbstractGlancing-incidence X-ray diffraction (GIXRD) has been applied to the investigation of depth-dependent stress distributions within electroplated Cu films due to overlying capping layers. 0.65 μm thick Cu films plated on conventional barrier and seed layers received a CVD SiCxNyHz cap, an electrolessly-deposited CoWP layer, or a CoWP layer followed by a SiCxNyHz cap. GIXRD and conventional X-ray diffraction measurements revealed that strain gradients were created in Cu films possessing a SiCxNyHz cap, where a greater in-plane tensile stress was generated near the film / cap interface. The constraint imposed by the SiCxNyHz layer during cooling from the cap deposition temperature led to an increase in the in-plane stress of approximately 180 MPa from the value measured in the bulk Cu. However, Cu films possessing a CoWP cap without a SiCxNyHz layer did not exhibit depth-dependent stress distributions. Because the CoWP capping deposition temperature was much lower than that employed in SiCxNyHz deposition, the Cu experienced elastic deformation during the capping process. Cross-sectional transmission electron microscopy indicated that the top surface of the Cu films exhibited extrusions near grain boundaries for the samples undergoing the thermal excursion during SiCxNyHz deposition. The conformal nature of these caps confirmed that the morphological changes of the Cu film surface occurred prior to capping and are a consequence of the thermal excursions associated with cap deposition.

Reaction Kinetics of Sputter-Deposited Ti On SiO2 Substrates during Rapid Thermal Annealing

1989 ◽  
Vol 146 ◽  
Author(s):  
E.J. Yun ◽  
H.G. Chun ◽  
K. Jung ◽  
D.L. Kwong ◽  
S. Lee
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron ◽  
Sputter Deposited ◽  
Kinetics Of

ABSTRACTIn this paper, the interactions of sputter-deposited Ti on SiO2 substrates during rapid thermal annealing in nitrogen at 550°C - 900°C for 10 - 60 s have been systematically studied using X-ray diffraction, Auger electron spectroscopy, transmission electron diffraction, TEM & cross-sectional TEM, and sheet resistance measurements.

Development of Polyimide/SMA Thin-Film Actuator

2010 ◽  
Vol 654-656 ◽  
pp. 2075-2078 ◽  
Author(s):  
Akira Ishida ◽  
Morio Sato
Keyword(s):  
Room Temperature ◽  
Polyimide Film ◽  
Martensitic Transformation Temperature ◽  
Cu Films ◽  
Cu Content ◽  
Stable Production ◽  
Cu Film ◽  
Wide Range ◽  
Cutting Out ◽  
Sputter Deposited

Ti-Ni-Cu shape memory alloy (SMA) thin films were sputter-deposited on heated polyimide substrates. The (Ni,Cu) rich Ti-Ni-Cu films deposited at a substrate temperature of 543 K were found to possess a high martensitic transformation temperature above room temperature over a wide range of Cu content from 7 to 23 at%, which allows stable production of actuators that operate at room temperature. Additional deposition of a Cu film onto the Ti-Ni-Cu films facilitated the soldering of wires onto the actuators and also decreased the power consumption and response time of the actuator. The force of a polyimide/Ti-Ni-Cu SMA actuator could be increased merely by increasing the thickness of the polyimide film. An actuator composed of a 125 m thick polyimide film and an 8 m thick TiNiCu film was able to lift a 13.5 g weight. Furthermore, a Ti-Ni-Cu film could be pattern etched on a polyimide film to produce a circuit. The results indicate that a polyimide/SMA film actuator is a promising simple actuator that can be produced by simply cutting out an appropriately shaped piece with scissors or by punching and then connecting the two edges to a battery by soldering.

Room temperature grain growth in sputtered Cu films

2002 ◽  
Vol 749 ◽  
Author(s):  
D. Deduytsche ◽  
C. Detavernier ◽  
J. Debaerdemaeker ◽  
R.L. Van Meirhaeghe ◽  
C. Dauwe ◽  
...  
Keyword(s):  
Substrate Temperature ◽  
Grain Growth ◽  
Room Temperature ◽  
Growth Zone ◽  
Cu Films ◽  
Deposition Parameters ◽  
Sputter Deposited ◽  
Zone Diagram ◽  
Kinetics Of ◽  
Deposited Film

ABSTRACTThe results are presented of a study on grain growth in magnetron sputter deposited Cu films. Similarly to the well-known case of electroplated Cu, we observed significant changes in the microstructure of sputter deposited films during storage at room temperature, as evidenced by a decrease in sheet resistance (up to 40% decrease in less than 6 hours). Direct evidence for grain growth was observed by FIB and SEM and by a strong decrease in the XRD peak width. Moreover, a decrease in the total defect content of the film was observed as a function of storage time from positron annihilation experiments, probably reflecting the decreasing number of grain boundaries in the film. It is well known that the microstructure of an as-deposited film is strongly dependent on the deposition parameters. This relationship is summarized in the Thornton structure-growth zone diagram [7]. We have studied the kinetics of room temperature grain growth as a function of Ar pressure and substrate temperature for Cu films with a thickness between 50 nm and 1 micrometer. It is found that spontaneous grain growth during storage at room temperature occurs mainly for a zone T microstructure (at low Ar pressure and a substrate temperature below 40°C), while it does not occur for zone I (high Ar pressure, low substrate temperature) or zone II (substrate temperature > 100°C) microstructures.

Characterization of reactive phase formation in sputter-deposited Ni/Al multilayer thin films using TEM

1996 ◽  
Vol 54 ◽  
pp. 1000-1001
Author(s):  
G. Lucadamo ◽  
K. Barmak ◽  
C. Michaelsen
Keyword(s):  
Thin Films ◽  
Phase Formation ◽  
Dark Field ◽  
Nickel Layer ◽  
Multilayer Thin Films ◽  
Cross Sectional ◽  
Dark Field Imaging ◽  
Transmission Electron ◽  
Sputter Deposited ◽  
Constant Heating

The subject of reactive phase formation in multilayer thin films of varying periodicity has stimulated much research over the past few years. Recent studies have sought to understand the reactions that occur during the annealing of Ni/Al multilayers. Dark field imaging from transmission electron microscopy (TEM) studies in conjunction with in situ x-ray diffraction measurements, and calorimetry experiments (isothermal and constant heating rate), have yielded new insights into the sequence of phases that occur during annealing and the evolution of their microstructure.In this paper we report on reactive phase formation in sputter-deposited lNi:3Al multilayer thin films with a periodicity A (the combined thickness of an aluminum and nickel layer) from 2.5 to 320 nm. A cross-sectional TEM micrograph of an as-deposited film with a periodicity of 10 nm is shown in figure 1. This image shows diffraction contrast from the Ni grains and occasionally from the Al grains in their respective layers.

The reaction of amorphous Ni-Nb films with Si in the presence of a native SiO2 layer

1990 ◽  
Vol 48 (4) ◽  
pp. 664-665
Author(s):  
N. Rozhanski ◽  
A. Barg
Keyword(s):  
High Temperature ◽  
Crystallization Temperature ◽  
Diffusion Barriers ◽  
Sio2 Layer ◽  
Si Substrate ◽  
Cross Sectional ◽  
Plan View ◽  
Temperature Range ◽  
Sputter Deposited

Amorphous Ni-Nb alloys are of potential interest as diffusion barriers for high temperature metallization for VLSI. In the present work amorphous Ni-Nb films were sputter deposited on Si(100) and their interaction with a substrate was studied in the temperature range (200-700)°C. The crystallization of films was observed on the plan-view specimens heated in-situ in Philips-400ST microscope. Cross-sectional objects were prepared to study the structure of interfaces.The crystallization temperature of Ni5 0 Ni5 0 and Ni8 0 Nb2 0 films was found to be equal to 675°C and 525°C correspondingly. The crystallization of Ni5 0 Ni5 0 films is followed by the formation of Ni6Nb7 and Ni3Nb nucleus. Ni8 0Nb2 0 films crystallise with the formation of Ni and Ni3Nb crystals. No interaction of both films with Si substrate was observed on plan-view specimens up to 700°C, that is due to the barrier action of the native SiO2 layer.

Modelling of impregnation of γ-alumina with cobalt and molybdenum salts. CoCl2-(NH4)2MoO4-γ-Al2O3 (aluminate type) system

1987 ◽  
Vol 52 (3) ◽  
pp. 663-671 ◽  
Author(s):  
Jiří Hanika ◽  
Vladimír Janoušek ◽  
Karel Sporka
Keyword(s):  
Effective Diffusion ◽  
Type System ◽  
Catalyst Particle ◽  
Ammonium Molybdate ◽  
Active Components ◽  
Model Set ◽  
Cobalt Dichloride ◽  
Set Up ◽  
Electron Microanalysis ◽  
Kinetics Of

Adsorption data for the impregnation of alumina with an aqueous solution of cobalt dichloride and ammonium molybdate were treated in terms of the Langmuir adsorption isotherm and compared with a mathematical model set up to describe the kinetics of simultaneous impregnation of a support by two components. The effective diffusion coefficients of the two components at 25 °C in a cylindrical particle of alumina were obtained. The validity of the model used was verified qualitatively by comparing the numerical results with the experimental time dependent concentration profiles of the active components in a catalyst particle, measured by electron microanalysis technique.

On the Role of Diffusion in the Oxidation of Fe, Ni, Co and the Fe-Sn Alloy by Calcium and Sodium Sulfates

2006 ◽  
Vol 258-260 ◽  
pp. 63-67
Author(s):  
V.M. Chumarev ◽  
V.P. Maryevich ◽  
V.A. Shashmurin
Keyword(s):  
Co Oxidation ◽  
Chemical Reaction ◽  
Diffusion Processes ◽  
Transport Processes ◽  
Diffusion Transport ◽  
Sodium Sulfates ◽  
Product Forms ◽  
Kinetics Of ◽  
Dominant Part

Diffusion processes play a dominant part in the macro kinetics of Fe, Ni and Co oxidation by calcium and sodium sulfates. Here, the reaction product forms a compact covering which spatially divides the reagents on the surface in the same way as in the oxidation and sulfidization of metals by oxygen and sulfur. Therefore, it is possible to assume in advance that interaction of metals with calcium and sodium sulfates will be determined not by the actual chemical reaction properly but by the diffusion transport processes.

Copper Electroplating on Zero-Thickness ALD Platinum for Nanoscale Computer Chip Interconnects

2006 ◽  
Vol 914 ◽  
Author(s):  
Alain Kaloyeros ◽  
Yu Zhu ◽  
Kathleen Dunn ◽  
Richard Mayti ◽  
Christopher Miller ◽  
...  
Keyword(s):  
Sessile Drop ◽  
Reverse Current ◽  
Atomic Layer ◽  
Organic Additive ◽  
Constant Current ◽  
Nucleation Density ◽  
Cross Sectional ◽  
Cu Films ◽  
Copper Electroplating ◽  
Seed Layers

AbstractUltra-thin platinum (Pt) films grown by atomic layer deposition (ALD) have been investigated as an alternative to conventional physical vapor deposited (PVD) Cu as seed layer for copper (Cu) electroplating. The wetting angles between the electrolyte and both Pt and Cu seed layers were analyzed using sessile-drop contact-angle analysis prior to plating. Both constant current and pulse reverse current (PRC) were applied to electroplate Cu on both types of blanket seed layers. Scanning electron microscope (SEM) revealed that Cu nucleation density on ALD Pt is lower than on its PVD Cu counterpart, after 30 seconds plating using PRC. Nevertheless, Cu nuclei were observed after only 1.0 minute plating on ALD Pt surfaces, and continuous Cu films were achieved at longer plating times. To fill trench structures coated with ALD Pt/TaN, PRC was applied using the same organic-additive-free electrolyte. Initial results suggest that these seed layers were adequate for ECD fill of trenches with 200 nm feature size and aspect ratio 7:1. The composition and microstructure of the Cu films were analyzed by Auger electron spectroscopy (AES), X-ray diffraction (XRD), and cross-sectional transmission electron microscopy (TEM). Thermal stability of the Cu/Pt system was examined by annealing in forming gas at 450°C for 1 hour and subsequent analysis by XRD and TEM.

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