Selective Mn Doping of Thin Film Zns:Mn Electroluminescent Devices by Laser Photochemical Vapor Deposition

1982 ◽  
Vol 17 ◽  
Author(s):  
A. Kitai ◽  
G.J. Wolga
Keyword(s):  
Thin Film ◽  
Laser Radiation ◽  
Process Parameters ◽  
Vapor Deposition ◽  
Electroluminescent Devices ◽  
Mn Doping ◽  
Ion Laser ◽  
Photochemical Vapor Deposition ◽  
Manganese Carbonyl

ABSTRACTU.V. laser radiation from a krypton ion laser was used to dissociate manganese carbonyl [Mn2 (CO)10*] at the surface of a ZnS thin film. The resulting Mn deposit was thermally diffused into the film to form a ZnS:Mn thin film electroluminescent (TFEL) device with spatially selective Mn doping. Process parameters and techniques are described as well as electroluminescence measurements on display elements. Finally we suggest applications of this process to future TFEL displays.

Photochemical vapor deposition of amorphous silicon and alloys for thin film solar cells

Solar Cells ◽  
1987 ◽  
Vol 21 (1-4) ◽  
pp. 453
Author(s):  
B.N. Baron ◽  
S.S. Hegedus ◽  
S.C. Jackson ◽  
R.E. Rocheleau
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Amorphous Silicon ◽  
Vapor Deposition ◽  
Thin Film Solar Cells ◽  
Photochemical Vapor Deposition

Laser Photochemical Vapor Deposition of Ge Films (300 ≤ T ≤ 873 K) from GeH4: Roles of Ge2H6 and Ge

1986 ◽  
Vol 75 ◽  
Author(s):  
K. K. King ◽  
V. Tavitian ◽  
D. B. Geohegan ◽  
E. A. P. Cheng ◽  
S. A. Piette ◽  
...  
Keyword(s):  
Activation Energy ◽  
Laser Radiation ◽  
Vapor Deposition ◽  
Film Growth ◽  
Uv Laser ◽  
Cvd Growth ◽  
Excimer Laser Radiation ◽  
Parallel Geometry ◽  
Photochemical Vapor Deposition ◽  
Substrate Temperatures

AbstractThe photochemical growth of polycrystalline and amorphous Ge films on SiO2, GaAs and NaCl by photodissociating GeH4 with excimer laser radiation in parallel geometry is reported. For substrate temperatures (TS) below the pyrolytic threshold for GeH4 (553 K), two distinct regions of film growth are observed. In the 425< TS < 553 K range, the ultraviolet (UV) laser “seeds” the reactor with Ge2H6 which readily pyrolyzes at the surface, forming several monolayers of Ge which subsequently catalyze the pyrolysis of GeH4. The activation energy (Ea) in this region is the same as that for the normal CVD growth of Ge from GeH4 (Ea = 0.9 eV). If, however, the laser is pulsed throughout the film growth run, Ea falls by a factor of at least 2 and growth is observed for TS as low as 300 K. In this laser sustained region, film growth ceases in the absence of UV laser radiation. These results clearly demonstrate the ability of a UV laser to alter the reactor chemistry and dictate the species responsible for film growth.

Analysis the Influence Law of Process Parameters on the Deposition Rate of SiC Thin Film

2014 ◽  
Vol 988 ◽  
pp. 113-116
Author(s):  
Qi Ming Xiao ◽  
Bin Xu ◽  
Jian Feng Xu
Keyword(s):  
Thin Film ◽  
Chemical Reactions ◽  
Process Parameters ◽  
Vapor Deposition ◽  
Process Analysis ◽  
Chemical Vapor ◽  
Mass Transfer Process ◽  
Chamber Pressure ◽  
Transmission Process ◽  
Software Coupling

Based on chemical vapor deposition (CVD) reaction and numerical analysis of the transmission process, analysis the influence law of the process parameters has been conducted for silicon carbide thin film. A detailed analysis on impact of the chamber pressure, substrate temperature and inlet flow has been realized through the use of CFD and chemical reactions software, coupling fluid flow, chemical reactions and mass transfer process in the deposition of SiC thin film. The result of simulation fully proved that the process parameters have different influence law, especially the chamber pressure.

Sign in / Sign up

Export Citation Format

Share Document