Characterization of Cross-Sections of Tibacacuo Thin Films on Ceramic Substrates by Analytical and High Resolution Electron Microscopy

1989 ◽  
Vol 169 ◽  
Author(s):  
J. Mayer ◽  
M. Lanham ◽  
T.W. James ◽  
A.G. Evans ◽  
M. RÜHle
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Cross Sections ◽  
High Resolution Electron Microscopy ◽  
Amorphous Layer ◽  
Superconducting Film ◽  
Ceramic Substrates ◽  
Resolution Electron ◽  
Lattice Images

AbstractCross-sectioned TEM specimens of thin TIBaCaCuO superconducting films on MgO and LaAlO3 substrates have been obtained using special ceramic holders. The superconductor/substrate interface as well as grain boundaries and defects in the superconductor have been characterized by means of analytical and high-resolution electron microscopy. EDX analysis and lattice images confirm that interdiffusion and the formation of an amorphous layer takes place at the interface between the LaA1O3 substrate and the superconducting film, while no indication for such reactions has been found in the case of the MgO substrates. The presence of intergrowth and defects in the superconducting film have been demonstrated by high-resolution electron microscopy. The chemical nature of such defects has been determined by a quantitative evaluation of high-resolution micrographs.

Characterization of Dislocations and Interfaces in Semiconductors by High Resolution Electron Microscopy

1980 ◽  
Vol 2 ◽  
Author(s):  
J.C.H. Spence ◽  
A. Olsen
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
High Resolution Electron Microscopy ◽  
Local Symmetry ◽  
Partial Dislocations ◽  
Resolution Electron ◽  
Lattice Images ◽  
Diffraction Patterns ◽  
The Individual

ABSTRACTIt is not presently possible to resolve the individual atoms in any semiconductor by high resolution electron microscopy (HREM). However symmetry arguments may be used to allow near-atomic resolution lattice images to be interpreted in rare favorable cases. This method is applied to the problem of distinguishing shuffle and glide set partial dislocations in silicon. It is also proposed that two dimensional characteristic loss energy selected diffraction patterns be used to reveal the local symmetry about selected substitutional species implanted in semiconductor lattices.

High-resolution electron microscopy of nanostructured materials

1995 ◽  
Vol 53 ◽  
pp. 172-173
Author(s):  
M. José-Yacamán
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Grain Boundaries ◽  
Nanostructured Materials ◽  
High Resolution Electron Microscopy ◽  
Hrem Image ◽  
Small Particles ◽  
Resolution Electron ◽  
Nanophase Materials

Electron microscopy is a fundamental tool in materials characterization. In the case of nanostructured materials we are looking for features with a size in the nanometer range. Therefore often the conventional TEM techniques are not enough for characterization of nanophases. High Resolution Electron Microscopy (HREM), is a key technique in order to characterize those materials with a resolution of ~ 1.7A. High resolution studies of metallic nanostructured materials has been also reported in the literature. It is concluded that boundaries in nanophase materials are similar in structure to the regular grain boundaries. That work therefore did not confirm the early hipothesis on the field that grain boundaries in nanostructured materials have a special behavior. We will show in this paper that by a combination of HREM image processing, and image calculations, it is possible to prove that small particles and coalesced grains have a significant surface roughness, as well as large internal strain.

HRTEM simulation of interfacial structure in amorphous multilayers

1989 ◽  
Vol 47 ◽  
pp. 466-467
Author(s):  
Margaret L. Sattler ◽  
Michael A. O'Keefe
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Cross Section ◽  
High Resolution Electron Microscopy ◽  
Interfacial Structure ◽  
Multilayer Sample ◽  
Resolution Electron ◽  
Multilayered Materials ◽  
Simulated Images

Multilayered materials have been fabricated with such high perfection that individual layers having two atoms deep are possible. Characterization of the interfaces between these multilayers is achieved by high resolution electron microscopy and Figure 1a shows the cross-section of one type of multilayer. The production of such an image with atomically smooth interfaces depends upon certain factors which are not always reliable. For example, diffusion at the interface may produce complex interlayers which are important to the properties of the multilayers but which are difficult to observe. Similarly, anomalous conditions of imaging or of fabrication may occur which produce images having similar traits as the diffusion case above, e.g., imaging on a tilted/bent multilayer sample (Figure 1b) or deposition upon an unaligned substrate (Figure 1c). It is the purpose of this study to simulate the image of the perfect multilayer interface and to compare with simulated images having these anomalies.

Atomic Scale Study of Cosi/Si (111) and CoSi2/Si (111) Interfaces

1989 ◽  
Vol 159 ◽  
Author(s):  
A. Catana ◽  
M. Heintze ◽  
P.E. Schmid ◽  
P. Stadelmann
Keyword(s):  
Electron Microscopy ◽  
Electron Beam ◽  
High Resolution ◽  
Orientation Relationship ◽  
Cross Sections ◽  
High Resolution Electron Microscopy ◽  
Atomic Scale ◽  
Type B ◽  
Initial Stage ◽  
Resolution Electron

ABSTRACTHigh Resolution Electron Microscopy (HREM) was used to study microstructural changes related to the CoSi/Si-CoSi/CoSi2/Si-CoSi2/Si transformations. CoSi is found to grow epitaxially on Si with [111]Si // [111]CoSi and < 110 >Si // < 112 >CoSi. Two CoSi non-equivalent orientations (rotated by 180° around the substrate normal) can occur in this plane. They can be clearly distinguished by HRTEM on cross-sections ( electron beam along [110]Si). At about 500°C CoSi transforms to CoSi2. Experimental results show that the type B orientation relationship satisfying [110]Si // [112]CoSi is preserved after the initial stage of CoSi2 formation. At this stage an epitaxial CoSi/CoSi2/Si(111) system is obtained. The atomic scale investigation of the CoSi2/Si interface shows that a 7-fold coordination of the cobalt atoms is observed in both type A and type B epitaxies.

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