In‐Situ Growth of Superconducting Bi‐Sr‐Ca‐Cu‐O Thin Films by Activated Reactive Co‐evaporation

1989 ◽  
Vol 169 ◽  
Author(s):  
K. Yoshikawa ◽  
T. Satoh ◽  
N. Sasaki ◽  
M. Nakano
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Transition Temperature ◽  
Smooth Surface ◽  
Oxygen Plasma ◽  
In Situ Growth ◽  
Superconducting Properties ◽  
Cooling Conditions ◽  
Zero Resistance

AbstractThe effect of in‐situ cooling conditions on surface roughness and superconducting properties have been studied. Bi‐Sr‐Ca‐Cu‐0 thin films were grown in‐situ on (100) MgO substrates at 700°C by activated reactive co‐evaporation. The films cool‐down in 760 Torr oxygen showed a transition temperature (Tc(onset)) of 100 K and zero resistance temperature (Tc (zero)) of 65 K. Smooth surface was obtained for the sample cooled‐down in oxygen plasma.

In-Situ Laser Processing and Microstructural Characteristics of YBa2Cu3O7−δ Thin Films on Si with TiN Buffer Layer

1992 ◽  
Vol 285 ◽  
Author(s):  
P. Tiwari ◽  
T. Zheleva ◽  
J. Narayan
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transition Temperature ◽  
Buffer Layer ◽  
Processing Parameters ◽  
Superconducting Transition ◽  
Epitaxial Relationship ◽  
Ybco Thin Films ◽  
Zero Resistance

ABSTRACTWe have prepared high-quality superconducting YBa2Cu3O7−δ (YBCO) thin films on Si(100) with TiN as a buffer layer using in-situ multitarget deposition system. Both TiN and YBCO thin films were deposited sequentially by KrF excitner laser ( λ = 248 nm ) at substrate temperature of 650°C. Thin films were characterized using X-ray diffraction (XRD), four-point-probe ac resistivity, scanning electron microscopy (SEM), transmission electron microscopy (TEM), and Rutherford backscattering (RBS). The TiN buffer layer was epitaxial and the epitaxial relationship was found to be cube on cube with <100> TiN // <100> Si. YBCO thin films on Si with TiN buffer layer showed the transition temperature of 90–92K with Tco (zero resistance temperature) of ∼84K. We have found that the quality of the buffer layer is very important in determining the superconducting transition temperature of the thin film. The effects of processing parameters and the correlation of microstructural features with superconducting properties are discussed indetail.

Role of the oxygen plasma during in situ growth of YBa2Cu3O6+x thin films by pulsed laser deposition

1998 ◽  
Vol 307 (3-4) ◽  
pp. 298-306 ◽  
Author(s):  
J. Garcı́a López ◽  
D.H.A. Blank ◽  
H. Rogalla ◽  
J. Siejka
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Oxygen Plasma ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
In Situ Growth

In situ growth and superconducting properties of YNi2B2C thin films

1996 ◽  
Vol 69 (1) ◽  
pp. 118-120 ◽  
Author(s):  
A. Andreone ◽  
M. Iavarone ◽  
R. Vaglio ◽  
P. Manini ◽  
E. Cogliati
Keyword(s):  
Thin Films ◽  
In Situ Growth ◽  
Superconducting Properties

Epitaxial Growth and Superconducting Properties of Yba2Cu3O7 Thin Films and Yba2Cu3O7/Dy(Pr)Yba2Cu3O7 Superlattices

1989 ◽  
Vol 169 ◽  
Author(s):  
J.-M. Triscone ◽  
M.G. Karkut ◽  
O. Brunner ◽  
L. Antognazza ◽  
A.D. Kent ◽  
...  
Keyword(s):  
Thin Films ◽  
Residual Resistivity ◽  
Unit Cell ◽  
Superconducting Properties ◽  
Single Target ◽  
Planar Magnetron ◽  
Zero Resistance ◽  
Superconducting Fluctuations ◽  
Modulation Wavelength

AbstractWe have prepared in situ REBa2Cu3O7 (REBCO) (RE= Y, Pr, Dy) thin films and YBC0/Dy(Pr)BC0 superlattices by single target dc planar magnetron sputtering. YBCO/DyBCO superlattices have been realized with modulation wavelength as short as 24Å, i.e., a unit cell of YBCO alternates with a unit cell of DyBCO, on average. The superconducting properties of such superlattices are indistinguishable from those of single layers. Tco's (zero resistance) are between 85 and 89K, and the residual resistivity ratios are between 2.5 and 3. In contrast to these results, when YBCO is layered with PrBCO, which is insulating, a dramatic change in the superconducting properties is observed. We have been able to artificially vary the coupling between single 12Å unit cell of YBCO by interposing insulating planes of PrBCO. As the YBCO layer separation increases, T is reduced and the transition broadens showing evidence of 2‐D superconducting fluctuations.

In-situ growth of high-performance (Ag, Sn) co-doped CoSb3 thermoelectric thin films

2021 ◽  
Author(s):  
Zhuang-Hao Zheng ◽  
Jun-Yun Niu ◽  
Dong-Wei Ao ◽  
Bushra Jabar ◽  
Xiao-Lei Shi ◽  
...  
Keyword(s):  
Thin Films ◽  
High Performance ◽  
In Situ Growth ◽  
Thermoelectric Thin Films ◽  
Co Doped

In Situ Growth of Metal–Organic Framework Thin Films with Gas Sensing and Molecule Storage Properties

Langmuir ◽  
2013 ◽  
Vol 29 (27) ◽  
pp. 8657-8664 ◽  
Author(s):  
Wei-Jin Li ◽  
Shui-Ying Gao ◽  
Tian-Fu Liu ◽  
Li-Wei Han ◽  
Zu-Jin Lin ◽  
...  
Keyword(s):  
Thin Films ◽  
Gas Sensing ◽  
Metal Organic Framework ◽  
In Situ Growth ◽  
Metal Organic ◽  
Storage Properties ◽  
Organic Framework

Interfacial adhesion of nanoporous zeolite thin films

2006 ◽  
Vol 21 (2) ◽  
pp. 505-511 ◽  
Author(s):  
Lili Hu ◽  
Junlan Wang ◽  
Zijian Li ◽  
Shuang Li ◽  
Yushan Yan
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Interfacial Adhesion ◽  
Interfacial Strength ◽  
Future Generation ◽  
In Situ Growth ◽  
Seeded Growth ◽  
Si Substrates ◽  
Film Substrate

Nanoporous silica zeolite thin films are promising candidates for future generation low-dielectric constant (low-k) materials. During the integration with metal interconnects, residual stresses resulting from the packaging processes may cause the low-k thin films to fracture or delaminate from the substrates. To achieve high-quality low-k zeolite thin films, it is important to carefully evaluate their adhesion performance. In this paper, a previously reported laser spallation technique is modified to investigate the interfacial adhesion of zeolite thin film-Si substrate interfaces fabricated using three different methods: spin-on, seeded growth, and in situ growth. The experimental results reported here show that seeded growth generates films with the highest measured adhesion strength (801 ± 68 MPa), followed by the in situ growth (324 ± 17 MPa), then by the spin-on (111 ± 29 MPa). The influence of the deposition method on film–substrate adhesion is discussed. This is the first time that the interfacial strength of zeolite thin films-Si substrates has been quantitatively evaluated. This paper is of great significance for the future applications of low-k zeolite thin film materials.

Combinatorial in situ Growth-and-Analysis with Synchrotron Radiation of Thin Films for Oxide Electronics

2007 ◽  
Author(s):  
M. Oshima ◽  
H. Kumigashira ◽  
K. Horiba ◽  
T. Ohnishi ◽  
M. Lippmaa ◽  
...  
Keyword(s):  
Thin Films ◽  
Synchrotron Radiation ◽  
In Situ Growth ◽  
Oxide Electronics
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