A New Hybrid Pvd/Omcvd Route to High‐Tc Superconducting Thin Films of Tl‐Ba‐Ca‐Cu‐O

1989 ◽  
Vol 169 ◽  
Author(s):  
D. S. Richeson ◽  
L. M. Tonge ◽  
X. K. Wang ◽  
H. O. Marcy ◽  
T. J. Marks ◽  
...  

AbstractSuperconducting thin films of Tl‐Ba‐Ca‐Cu‐0 have been prepared by a unique hybrid technique that combines electron beam evaporation with organometallic chemical vapor deposition (OMCVD). Multilayer thin films of Ba‐Ca‐Cu‐O are prepared by sequential electron beam evaporation of BaF2, CaF2, and Cu sources onto single crystal MgO (100) or yttria‐stabilized zirconia (YSZ) substrates followed by annealing in a water vapor‐saturated oxygen atmosphere. Thallium is then incorporated into these films in either of two ways: (1) via OMCVD using thallium(cyclopentadienide) as the source, or (2) rapid annealing of the Ba‐Ca‐Cu‐O film in the presence of bulk thallium superconductor. The resultant films primarily consist of single phase TlBa2Ca2Cu3Ox with the Cu‐O planes preferentially oriented parallel to the substrate surface. Resistivity measurements indicate superconducting onset temperatures above 120 K with zero resistance by 104 K. By eliminating the water vapor anneal, residual fluoride, originating from the sources, may be left in the film. This leads to formation of predominantly c‐axis oriented crystallites of the TlBa2CaCu2Ox phase.

1992 ◽  
Vol 06 (08) ◽  
pp. 477-483 ◽  
Author(s):  
QINGXIN SU ◽  
SHIFA XU ◽  
DAFU CUI ◽  
HUIBIN LU ◽  
YONGJUN TIAN ◽  
...  

High-T c superconducting thin films of YBa 2 Cu 3 O 7 were grown in-situ on (100) SrTiO 3 substrates by Nedymium:yttrium aluminum garnet [Nd:YAG] laser ablation. The effects of the substrate temperature on the transition temperature, microcrystalline structure and surface morphology of the films were discussed. Best results were obtained in the 730°–770°C range. X-ray diffraction analysis showed that these films were highly c-oriented with the c-axis perpendicular to the substrate surface. At the optimum substrate temperature, a very smooth morphology with only a few small particles were observed by scanning electron microscopy. The zero resistance temperature of these films were ≥ 90 K with a narrow transition width and the ac susceptibility measurement also gave the same result. The highest critical current density obtained at 77 K and zero magnetic field was 3.8 × 106 A/cm 2.


1989 ◽  
Vol 48 (4) ◽  
pp. 397-400 ◽  
Author(s):  
H. P. Sch�lch ◽  
P. Fickenscher ◽  
T. Redel ◽  
M. Stetter ◽  
G. Saemann-Ischenko ◽  
...  

1989 ◽  
Vol 169 ◽  
Author(s):  
Shinji Gohda ◽  
Yasuhiro Maeda

AbstractBi‐Sr‐Ca‐Cu‐0 superconducting thin films have been prepared on MgO substrates by a Metalorganic Chemical Vapor Deposition technique using an infrared lamp. It was found in this study that the film composition ratio could be precisely controlled by using this technique. A zero resistance at 81K was obtained for Bi1Sr1.3Ca0.9Cu1.8Ox film grown at 850°C. The critical current density of this film was 1.0xl03A/cm2 at 77K.


2012 ◽  
Vol 479-481 ◽  
pp. 1781-1785
Author(s):  
Zhang Yu Zhou ◽  
Fa Shun Yang ◽  
Jian Yang ◽  
Song Wang ◽  
Xing Hua Fu

MgB2 superconducting thin films have been fabricated on Silicon (111) substrate in a two-step ex situ approach. The precursor boron film was deposited by chemical vapor deposition by using diborane as the boron source at 460°C.The Magnesium film with a thickness of about 380nm was deposited on top of the boron film by magnetron sputtering. The samples were then post-annealed in situ in argon atmosphere at 500°C for time range from 2.5h to 5.0h. The sample for optimized annealing time exhibits abrupt superconducting transition, with an onset temperature around 35K and a zero resistance temperature greater than 34K. The microstructures and morphological properties of the films were examined by X-ray diffraction (XRD) and scanning electron microscopy (SEM).


1989 ◽  
Vol 25 (2) ◽  
pp. 2429-2432
Author(s):  
J. Steinbeck ◽  
A.C. Anderson ◽  
B.Y. Tsaur ◽  
A.J. Strauss

Author(s):  
Jason R. Heffelfinger ◽  
C. Barry Carter

Yttria-stabilized zirconia (YSZ) is currently used in a variety of applications including oxygen sensors, fuel cells, coatings for semiconductor lasers, and buffer layers for high-temperature superconducting films. Thin films of YSZ have been grown by metal-organic chemical vapor deposition, electrochemical vapor deposition, pulse-laser deposition (PLD), electron-beam evaporation, and sputtering. In this investigation, PLD was used to grow thin films of YSZ on (100) MgO substrates. This system proves to be an interesting example of relationships between interfaces and extrinsic dislocations in thin films of YSZ.In this experiment, a freshly cleaved (100) MgO substrate surface was prepared for deposition by cleaving a lmm-thick slice from a single-crystal MgO cube. The YSZ target material which contained 10mol% yttria was prepared from powders and sintered to 85% of theoretical density. The laser system used for the depositions was a Lambda Physik 210i excimer laser operating with KrF (λ=248nm, 1Hz repetition rate, average energy per pulse of 100mJ).


1990 ◽  
Vol 5 (4) ◽  
pp. 677-679 ◽  
Author(s):  
A. J. Drehman ◽  
M. W. Dumais

Y-Ba-Cu-O films were made by R-F diode sputtering using a single oxide target. It was found that if a small negative bias is applied to the substrate, the etching associated with reactive sputtering is significantly reduced. This results in better composition control and uniformity, which are quite important for the formation of superconducting thin films. Films deposited on strontium titanate, when annealed in oxygen, become superconducting with zero resistance at 89 K.


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