The Influence of Target-Substrate Bias on Pulsed Laser Deposited Yba2Cu307-6

1989 ◽  
Vol 169 ◽  
Author(s):  
D.B. Chrisey ◽  
J.S. Horwitz ◽  
K.S. Grabowski ◽  
M.E. Reeves ◽  
M.S. Osofsky ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser ◽  
Substrate Bias ◽  
Film Properties ◽  
Positive Ions ◽  
Composition Structure

AbstractWe have deposited YBa2Cu307.$ thin films onto <100> SrTi03 substrates at 700°C as a function of target‐substrate bias (0 to 300 V) in order to make use of the positive ions in the laser produced plume to assist in the deposition. The films were extensively characterized to determine differences in film properties (composition, structure, and transport). The results suggest that film properties were optimized at or near a target‐substrate bias of 100 V, although, the differences in film properties were within the margin of reproducibility.

DEPOSITION OF TiAlV THIN FILMS BY PULSED LASER AND DC MAGNETRON SPUTTERING: STRUCTURAL, COMPOSITIONAL AND ELECTROCHEMICAL CORROSION STUDY

2019 ◽  
Vol 27 (08) ◽  
pp. 1950188
Author(s):  
A. ALKHAWWAM ◽  
B. ABDALLAH ◽  
A. K. JAZMATI ◽  
M. TOOTANJI ◽  
F. LAHLAH
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Corrosion Test ◽  
Pulsed Laser ◽  
Electrochemical Corrosion ◽  
Target Material ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
Film Properties ◽  
X Ray

In this work, TiAlV thin films have been prepared on two different types of substrates: silicon and stainless steel (SS304) by two deposition methods: Pulsed Laser Deposition (PLD) and DC magnetron sputtering. Different techniques have been employed in order to characterize film properties such as: Scanning Electron Microscopy (SEM) equipped with Energy Dispersive X-ray (EDX), X-ray diffraction (XRD), microhardness and corrosion test. EDX analysis showed that the deposited films are slightly different from that of the target material Ti6Al4V alloy. The measured microhardness values are about 11.7[Formula: see text]GPa and 4.7[Formula: see text]GPa for films prepared by PLD and DC magnetron sputtering, respectively. Corrosion test indicated that the corrosion resistance of the two TiAlV films deposited on SS304 substrates in (0.9% NaCl) physiological normal saline medium was significantly improved compared with the SS304 substrates. These attractive results could permit applications of our films in the medical implants fabrication.

Pulsed Laser Crystallization of Amorphous Silicon Films: Effects of Substrate Temperature and Laser Shot Density

1992 ◽  
Vol 258 ◽  
Author(s):  
R. I. Johnson ◽  
G. B. Anderson ◽  
S. E. Ready ◽  
D. K. Fork ◽  
J. B. Boyce
Keyword(s):  
Grain Size ◽  
Pulsed Laser ◽  
Laser Shot ◽  
Substrate Bias ◽  
Laser Crystallization ◽  
Film Properties ◽  
X Ray ◽  
Laser Fluences ◽  
High Laser ◽  
Current Report

ABSTRACTA recent report on pulsed laser crystallization of a-Si thin films concluded that substrate bias temperatures up to 400°C in combination with laser fluences below 500 mJ/cm2 had little effect on grain size and transport properties. The current report describes the effects of substrate bias temperature up to 500°C and laser fluence up to 540 mJ/cm2 on grain size, mobility and Si (111) x-ray peak intensities. Results indicate that substrate bias temperatures above 400°C, in combination with high laser shot densities and large laser beam spot energies (> 500 mJ/cm2), are a factor in Improving these film properties.

Properties of DLC Films Produced by Pulsed Laser Induced Arc Deposition

2005 ◽  
Vol 475-479 ◽  
pp. 3901-3904
Author(s):  
Na-na Jiang ◽  
Tian Min Shao ◽  
Da Rong Chen
Keyword(s):  
Pulsed Laser ◽  
Substrate Bias ◽  
Film Properties ◽  
Spectra Analysis ◽  
Substrate Bias Voltage ◽  
Arc Voltage ◽  
Atomic Force ◽  
Pre Treatment ◽  
Arc Deposition ◽  
Si Wafer

Diamond like carbon (DLC) films were prepared on Si wafer, using laser induced arc deposition (Laser arc) technique. Results of Raman Spectra analysis showed that the as-deposit films were amorphous, having obvious sp3 structure. Meanwhile, surface topography and micro-tribological properties were investigated by using Atomic Force Microscope and Nano-Scratch Tester. Influences of arc voltage, substrate bias voltage, target materials and substrate pre-treatment methods upon the film structures and film properties were studied.

The Optimization of Niobium Diselenide Thin Films Through Control of Pulsed Laser Deposition Parameters

1992 ◽  
Vol 285 ◽  
Author(s):  
Allan E. Day ◽  
Samuel J.P. Laube ◽  
M.S. Donley ◽  
J.S. Zabinski
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Optimal Growth ◽  
Growth Conditions ◽  
Laser Deposition ◽  
Film Properties ◽  
Niobium Diselenide ◽  
Deposition Parameters ◽  
And Control

ABSTRACTNiobium diselenide has potential for use as a conductive lubricant, but to achieve the optimal properties of low friction coefficient, high conductivity and oxidation resistance, the SeJNb ratio and crystallinity must be carefully controlled. It has been shown that Pulsed Laser Deposition (PLD) permits the required degree of control, even over films with complex stoichiometries. (4–8). In this study, PLD was used to grow stoichiometric, crystalline thin films of niobium diselenide and to study the effects of laser deposition parameters on film properties. Film chemistry and crystallinity were evaluated using XPS, RBS, and glancingangle XRD. Friction and wear measurements were taken on a ball-on-flat tribometer. The deposition apparatus incorporates a fully computerized data acquisition and control system that facilitated the correlation of the laser deposition parameters to film properties. This study has shown that film chemistry could be changed from substoichiometric to superstoichiometric and crystallinity varied between amorphous to highly crystalline by appropriate choice of PLD parameters. The property correlations and acquisition system that permitted the identification of the optimal growth conditions will be described.

scholarly journals Spectroscopic studies of laser ablated ZnO plasma and correlation with pulsed laser deposited ZnO thin film properties

2010 ◽  
Vol 28 (1) ◽  
pp. 149-155 ◽  
Author(s):  
Gaurav Shukla ◽  
Alika Khare
Keyword(s):  
Thin Films ◽  
Ambient Pressure ◽  
Pulsed Laser ◽  
Spectroscopic Studies ◽  
Zno Thin Films ◽  
Number Density ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
Plasma Parameters ◽  
Film Properties

AbstractIn this paper, measurement of various plasma parameters during pulsed laser deposition of ZnO thin films on Si (100) substrates is reported. The variations of electron number density and electron temperature with ambient pressure and target substrate distance is obtained via spectroscopic measurements. The structural and optical properties of ZnO thin films were analyzed using X-ray diffraction, scanning electron microscope, and photoluminescence and then correlated with spectroscopic results to find optimum conditions for the deposition of high quality ZnO thin films.

Large area Pulsed Laser Deposition of Aurivillius-Type Layered Perovskite Thin Films

1996 ◽  
Vol 433 ◽  
Author(s):  
A. Pignolet ◽  
C. Curran ◽  
S. Welke ◽  
S. Senz ◽  
M. Alexe ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Layered Perovskite ◽  
Electrical Measurements ◽  
Large Area ◽  
A New Technique ◽  
Composition Structure ◽  
Near Future

AbstractThin films of Aurivillius-type layered perovskites of Bi4Ti3O12 and SrBi2Ta2O9 have been epitaxially deposited by pulsed laser deposition (PLD) on SrTiO3 single crystal substrates. Bi4 Ti3O12 has been deposited as well on a CeO2JYSZ/Si(100) buffer layer, and on Pt-coated oxidized silicon for electrical measurements. Using a new technique for large area PLD, Bi4Ti3O12 has also been deposited on a whole (100)-oriented 3”- Si wafer. The obtained films have a uniform thickness over a diameter greater than 50 mm, corresponding to an area of about 20 cm2. It is likely that homogeneous deposition on entire wafers of 3-inch in diameter will be accomplished in the near future. The composition, structure, and electrical properties of the films are presented.

Thermoelectric properties of epitaxial and topotaxial NaxCoO2 thin films

2005 ◽  
Vol 886 ◽  
Author(s):  
Adyam Venimadhav ◽  
Z Ma ◽  
Qi Li ◽  
A Soukiassian ◽  
X. X. Xi ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Sapphire Substrate ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Epitaxial Films ◽  
Laser Deposition ◽  
Vapor Pressures ◽  
Film Properties ◽  
Deposition Parameters

ABSTRACTWe report structural, electrical, and thermopower properties of epitaxial and topotaxial NaxCoO2 thin films on (0001) sapphire substrate. Topotaxial NaxCoO2 films were prepared by converting an epitaxial Co3O4 film to NaxCoO2 by annealing in Na vapor and epitaxial NaxCoO2 films were obtained by pulsed laser deposition. All the films are c-axis oriented. For topotaxial films, annealing in different Na vapor pressures resulted in films with different Na concentrations, which showed distinct transport properties. For directly deposited epitaxial films by pulsed laser deposition, deposition parameters are found to control the Na concentration and hence the film properties. The largest thermoelectric power of the samples made by different methods is found to be similar in the range of 70-100 μV/K at room temperature

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