Hydroxyapatite thin films growth by pulsed laser deposition: effects of the Ti alloys substrate passivation on the film properties by the insertion of a TiN buffer layer

2001 ◽  
Author(s):  
Valentin D. Nelea ◽  
Carmen Ristoscu ◽  
Cornel Ghica ◽  
Herve Pelletier ◽  
Ion N. Mihailescu ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Buffer Layer ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Film Properties ◽  
Ti Alloys

Pulsed laser deposition of YBCO thin films on metal substrates with YSZ buffer layer

1997 ◽  
Vol 19 (8-9) ◽  
pp. 1033-1039 ◽  
Author(s):  
L. Ceresara ◽  
F. Fuso ◽  
E. Arimondo ◽  
P. Scardi
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Buffer Layer ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Metal Substrates ◽  
Ybco Thin Films

The Optimization of Niobium Diselenide Thin Films Through Control of Pulsed Laser Deposition Parameters

1992 ◽  
Vol 285 ◽  
Author(s):  
Allan E. Day ◽  
Samuel J.P. Laube ◽  
M.S. Donley ◽  
J.S. Zabinski
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Optimal Growth ◽  
Growth Conditions ◽  
Laser Deposition ◽  
Film Properties ◽  
Niobium Diselenide ◽  
Deposition Parameters ◽  
And Control

ABSTRACTNiobium diselenide has potential for use as a conductive lubricant, but to achieve the optimal properties of low friction coefficient, high conductivity and oxidation resistance, the SeJNb ratio and crystallinity must be carefully controlled. It has been shown that Pulsed Laser Deposition (PLD) permits the required degree of control, even over films with complex stoichiometries. (4–8). In this study, PLD was used to grow stoichiometric, crystalline thin films of niobium diselenide and to study the effects of laser deposition parameters on film properties. Film chemistry and crystallinity were evaluated using XPS, RBS, and glancingangle XRD. Friction and wear measurements were taken on a ball-on-flat tribometer. The deposition apparatus incorporates a fully computerized data acquisition and control system that facilitated the correlation of the laser deposition parameters to film properties. This study has shown that film chemistry could be changed from substoichiometric to superstoichiometric and crystallinity varied between amorphous to highly crystalline by appropriate choice of PLD parameters. The property correlations and acquisition system that permitted the identification of the optimal growth conditions will be described.

scholarly journals High-Quality ZnO Thin Films Grown by Fast Pulsed Laser Deposition without a Buffer Layer

2005 ◽  
Vol 44 (No. 31) ◽  
pp. L995-L997 ◽  
Author(s):  
Ming-Zheng Lin ◽  
Chun-Tsung Su ◽  
Hong-Chang Yan ◽  
Ming-Yau Chern
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Buffer Layer ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zno Thin Films ◽  
High Quality

Thermoelectric properties of epitaxial and topotaxial NaxCoO2 thin films

2005 ◽  
Vol 886 ◽  
Author(s):  
Adyam Venimadhav ◽  
Z Ma ◽  
Qi Li ◽  
A Soukiassian ◽  
X. X. Xi ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Sapphire Substrate ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Epitaxial Films ◽  
Laser Deposition ◽  
Vapor Pressures ◽  
Film Properties ◽  
Deposition Parameters

ABSTRACTWe report structural, electrical, and thermopower properties of epitaxial and topotaxial NaxCoO2 thin films on (0001) sapphire substrate. Topotaxial NaxCoO2 films were prepared by converting an epitaxial Co3O4 film to NaxCoO2 by annealing in Na vapor and epitaxial NaxCoO2 films were obtained by pulsed laser deposition. All the films are c-axis oriented. For topotaxial films, annealing in different Na vapor pressures resulted in films with different Na concentrations, which showed distinct transport properties. For directly deposited epitaxial films by pulsed laser deposition, deposition parameters are found to control the Na concentration and hence the film properties. The largest thermoelectric power of the samples made by different methods is found to be similar in the range of 70-100 μV/K at room temperature

Fabrication of SrRuO3 Epitaxial Thin Films on YBa2Cu3Ox / CeO2 / YSZ - Buffered Si Substrates by Pulsed Laser Deposition

2003 ◽  
Vol 786 ◽  
Author(s):  
Takamitsu Higuchi ◽  
Koichi Morozumi ◽  
Setsuya Iwashita ◽  
Masaya Ishida ◽  
Tatsuya Shimoda
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Buffer Layer ◽  
Process Condition ◽  
Pulsed Laser ◽  
High Energy ◽  
Laser Deposition ◽  
Epitaxial Thin Films ◽  
Rocking Curve ◽  
Si Substrates

ABSTRACTPseudocubic SrRuO3 (100) epitaxial thin films were fabricated on Si (100) with a YBa2Cu3Ox / CeO2 / YSZ (yttria-stabilized-zirconia) triple buffer layer ∼ 14 nm thick by pulsed laser deposition (PLD). Reflection high-energy electron diffraction (RHEED) and X-ray diffraction (XRD) revealed that the first buffer layer of YSZ (100) was epitaxially grown on naturally oxidized Si (100) substrates with the process condition of PB (base pressure) = 1×10-Torr, PO2 (oxygen partial pressure) = 5×10- Torr, and Ts (substrate temperature) = 700 °C. Higher deposition rate of YSZ in the range of 0 ∼ 0.6 nm/min brought about better crystallinity with a smaller value of a full-width at half maximum (FWHM) in the YSZ (200) rocking curve. Subsequent deposition of CeO2, YBa2Cu3Ox, and SrRuO3 resulted in an SrRuO3 (100) epitaxial thin film exhibiting good crystallinity with FWHM = 1.7° in the SrRuO3 (200) rocking curve.

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