Partial Superconductivity in YBa2Cu3O7 at 90 K < T < 300 K

1989 ◽  
Vol 169 ◽  
Author(s):  
R. Munger ◽  
H.J.T. Smith
Keyword(s):  
Magnetic Fields ◽  
Room Temperature ◽  
Three Samples ◽  
Current Voltage ◽  
Current Voltage Characteristics

AbstractPartial superconductivity has been observed in bulk polycrystalline samples of YBa2Cu3O7 at temperatures as high as room temperature. The technique used was to measure the current-voltage characteristics of bulk samples in the presence of microwaves and magnetic fields. The measurements have been repeated on three samples that had been prepared separately.

Study on Schottky Diode Characteristics Improving by X-Ray Irradiation

2013 ◽  
Vol 717 ◽  
pp. 113-116
Author(s):  
Sani Klinsanit ◽  
Itsara Srithanachai ◽  
Surada Ueamanapong ◽  
Sunya Khunkhao ◽  
Budsara Nararug ◽  
...  
Keyword(s):  
Leakage Current ◽  
Schottky Diode ◽  
Room Temperature ◽  
The Other ◽  
Low Power Consumption ◽  
Initial Value ◽  
X Ray ◽  
Forward Current ◽  
Current Voltage ◽  
Current Voltage Characteristics

The effect of soft X-ray irradiation to the Schottky diode properties was analyzed in this paper. The built-in voltage, leakage current, and work function of Schottky diode were investigated. The current-voltage characteristics of the Schottky diode are measured at room temperature. After irradiation at 70 keV for 55 seconds the forward current and leakage current are increase slightly. On the other hand, the built-in voltage is decrease from the initial value about 0.12 V. Consequently, this method can cause the Schottky diode has low power consumption. The results show that soft X-ray can improve the characteristics of Schottky diode.

Self-assembled rigid conjugated polymer nanojunction and its nonlinear current–voltage characteristics at room temperature

2004 ◽  
Vol 85 (1) ◽  
pp. 115-117 ◽  
Author(s):  
Wenping Hu ◽  
Hiroshi Nakashima ◽  
Kazuaki Furukawa ◽  
Yoshiaki Kashimura ◽  
Katsuhiro Ajito ◽  
...  
Keyword(s):  
Conjugated Polymer ◽  
Room Temperature ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Self Assembled

Photosensitive Amorphous Si Thin Films Prepared by Magnetron Technology.

2002 ◽  
Vol 744 ◽  
Author(s):  
Galina Khlyap ◽  
Victor Brytan
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Continuous Mode ◽  
Applied Bias ◽  
Near Ir ◽  
Current Voltage ◽  
Exponential Character ◽  
Current Voltage Characteristics ◽  
Amorphous Si ◽  
Spectral Ranges

ABSTRACTElectric field – induced effects are studied in thin films of amorphous Si grown by magnetron sputtering performed in continuous and pulse modes. Current-voltage characteristics are measured under the room temperature in different spectral ranges. It is shown that the investigated dependencies are of exponential character in all range of applied bias. Good photosensitivity was revealed by the samples prepared in continuous mode in the near-IR and visible interval. The samples grown by the pulse magnetron technology were shown room-temperature photosensitivity in near-IR range after 2000C hydrogenation.

scholarly journals Damage Induced by Neutron Radiation on Output Characteristics of Solar Cells, Photodiodes, and Phototransistors

2013 ◽  
Vol 2013 ◽  
pp. 1-6 ◽  
Author(s):  
Biljana Simić ◽  
Dejan Nikolić ◽  
Koviljka Stanković ◽  
Ljubinko Timotijević ◽  
Srboljub Stanković
Keyword(s):  
Room Temperature ◽  
Neutron Emission ◽  
Optoelectronic Devices ◽  
Neutron Radiation ◽  
Solar Panels ◽  
Current Voltage ◽  
Measurement Results ◽  
Before And After ◽  
Current Voltage Characteristics ◽  
Output Characteristics

This study investigates the effects of neutron radiation onI-Vcharacteristics (current dependance on voltage) of commercial optoelectronic devices (silicon photodiodes, phototransistors, and solar panels). Current-voltage characteristics of the samples were measured at room temperature before and after irradiation. The diodes were irradiated using Am-Be neutron source with neutron emission of2.7×106 n/s. The results showed a decrease in photocurrent for all samples which could be due to the existence of neutron-induced displacement defects introduced into the semiconductor lattice. The process of annealing has also been observed. A comparative analysis of measurement results has been performed in order to determine the reliability of optoelectronic devices in radiation environments.

Modeling and Simulations of Pd/n-ZnO Schottky Diode and its Comparison with Measurements

2009 ◽  
Vol 79-82 ◽  
pp. 1317-1320 ◽  
Author(s):  
S Faraz ◽  
Haida Noor ◽  
M. Asghar ◽  
Magnus Willander ◽  
Qamar-ul Wahab
Keyword(s):  
Schottky Diode ◽  
Room Temperature ◽  
Depletion Region ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Current Voltage Characteristics ◽  
Recombination Current ◽  
Experimental Values ◽  
Iv Curves ◽  
The Ideal

Modeling of Pd/ZnO Schottky diode has been performed together with a set of simulations to investigate its behavior in current-voltage characteristics. The diode was first fabricated and then the simulations were performed to match the IV curves to investigate the possible defects and their states in the bandgap. The doping concentration measured by capacitance-voltage is 3.4 x 1017 cm-3. The Schottky diode is simulated at room temperature and the effective barrier height is determined from current voltage characteristics both by measurements and simulations and it was found to be 0.68eV. The ideality factor obtained from simulated results is 1.06-2.04 which indicates that the transport mechanism is thermionic. It was found that the recombination current in the depletion region is responsible for deviation of experimental values from the ideal thermionic model deployed by the simulator.

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