Correlation Among Process Routes, Microstructures and Properties of Chemically Vapor Deposited Silicon Carbide

1989 ◽  
Vol 168 ◽  
Author(s):  
Robert F. Davis
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor ◽  
Thin Film Deposition ◽  
Woven Fabrics ◽  
Film Deposition ◽  
Corrosion Resistant ◽  
Semiconductor Thin Films ◽  
Wear And Corrosion ◽  
Generic Term ◽  
Corrosion Resistant Coatings

Abstract“Silicon carbide” is a generic term for a host of different materials produced by several process routes which yield a variety of microstructures and associated property characteristics. The route of chemical vapor deposition (CVD) is used primarily to deposit SiC for wear- and corrosion- resistant coatings and for diffusion barriers to and from the underlying substrate. Presently this technique is also being used to deposit monocrystalline semiconductor thin films of SiC and to infiltrate various high temperature woven fabrics with this material. The following sections describe the results of thermodynamic calculations to define SiC CVD diagrams using various precursor gas mixtures, discuss various CVD techniques and detail the results of deformation, infiltration and thin film deposition studies that have been recently conducted on vapor deposited SiC.

Functional protective coatings of nickel-based alloys

2019 ◽  
pp. 110-114
Author(s):  
D. A. Gerashchenkov ◽  
T. I. Bobkova ◽  
A. F. Vasiliev ◽  
P. A. Kuznetsov ◽  
E. A. Samodelkin ◽  
...  
Keyword(s):  
Environmental Influence ◽  
Protective Coatings ◽  
Cold Gas Dynamic Spraying ◽  
Functional Elements ◽  
Corrosion Resistant ◽  
Gas Dynamic ◽  
Precision Alloy ◽  
Wear And Corrosion ◽  
High Level ◽  
Corrosion Resistant Coatings

A composition of a precision alloy based on the Ni–Cr–Mo system for wear and corrosion-resistant coatings by supersonic cold gas dynamic spraying has been developed. The optimum coatings composition provides high level of operational properties; its application is very promising for protection of structural and functional elements of marine equipment from aggressive environmental influence.

Developing Monolithically Integrated CdTe Devices Deposited by AP-MOCVD

2013 ◽  
Vol 1538 ◽  
pp. 275-280
Author(s):  
S.L. Rugen-Hankey ◽  
V. Barrioz ◽  
A. J. Clayton ◽  
G. Kartopu ◽  
S.J.C. Irvine ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Thin Film Deposition ◽  
Deposition Process ◽  
Film Deposition ◽  
Aluminosilicate Glass ◽  
Organic Chemical ◽  
Large Area ◽  
Monolithically Integrated ◽  
Glass Substrates ◽  
Laser Scribing

ABSTRACTThin film deposition process and integrated scribing technologies are key to forming large area Cadmium Telluride (CdTe) modules. In this paper, baseline Cd1-xZnxS/CdTe solar cells were deposited by atmospheric-pressure metal organic chemical vapor deposition (AP-MOCVD) onto commercially available ITO coated boro-aluminosilicate glass substrates. Thermally evaporated gold contacts were compared with a screen printed stack of carbon/silver back contacts in order to move towards large area modules. P2 laser scribing parameters have been reported along with a comparison of mechanical and laser scribing process for the scribe lines, using a UV Nd:YAG laser at 355 nm and 532 nm fiber laser.

Quick and Practical Cleaning Process for Silicon Carbide Epitaxial Reactor

2018 ◽  
Vol 924 ◽  
pp. 96-99
Author(s):  
Kohei Shioda ◽  
Keisuke Kurashima ◽  
Hitoshi Habuka ◽  
Hideki Ito ◽  
Shinichi Mitani ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Carbon Film ◽  
Film Surface ◽  
Chemical Vapor ◽  
Pyrolytic Carbon ◽  
Film Deposition ◽  
Carbon Surface ◽  
Cleaning Process ◽  
Silicon Carbide Film ◽  
Carbon Coated

In order to develop a quick and practical cleaning process for the silicon carbide chemical vapor deposition reactor, the pyrolytic carbon-coated susceptor was used. The 30-μm-thick silicon carbide film was formed on the susceptor; the film was cleaning by chlorine trifluoride gas at 460 °C for 15 min. The remained fluorine was removed by the annealing at 900 °C in ambient hydrogen. The pyrolytic carbon surface did not suffer from any damage, because the pyrolytic carbon film surface morphology after the cleaning process was the same as that before the silicon carbide film deposition.

Emission spectra study of plasma enhanced chemical vapor deposition of intrinsic, n+, and p+ amorphous silicon thin films

2013 ◽  
Vol 1536 ◽  
pp. 133-138
Author(s):  
I-Syuan Lee ◽  
Yue Kuo
Keyword(s):  
Deposition Rate ◽  
Gas Flow ◽  
Emission Spectra ◽  
Chemical Vapor ◽  
Critical Factor ◽  
Optical Emission ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Silicon Thin Films ◽  
Deposition Processes

ABSTRACTThe PECVD intrinsic, n+, and p+ a-Si:H thin film deposition processes have been studied by the optical emission spectroscope to monitor the plasma phase chemistry. Process parameters, such as the plasma power, pressure, and gas flow rate, were correlated to SiH*, Hα*, and Hβ* optical intensities. For all films, the deposition rate increases with the increase of the SiH* intensity. For the doped films, the Hα*/SiH* ratio is a critical factor affecting the resistivity. The existence of PH3 or B2H6 in the feed stream enhances the deposition rate. Changes of the free radicals intensities can be used to explain variation of film characteristics under different deposition conditions.

Low Energy, High Density Plasma (ICP) for Low Defect Etching and Deposition Applications on Compound Semiconductors

1999 ◽  
Vol 573 ◽  
Author(s):  
J. Etrillard ◽  
H. Maher ◽  
M. Medjdoub ◽  
J. L. Courant ◽  
Y. I. Nissim
Keyword(s):  
Inductively Coupled Plasma ◽  
Chemical Vapor ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Point Of View ◽  
Etch Depth ◽  
Nitride Film ◽  
Silicon Nitride Film ◽  
Inductively Coupled ◽  
Device Processing

ABSTRACTThe use of a low ion energy of an extremely dense plasma has been studied as a dry etching as well as a thin film deposition tool (same source, two different reactors) for InP and GaAs device processing. Under these working conditions it is expected to control well the etch depth or in the case of deposition to obtain high deposition rates. In all cases minimun ion damages are induced on the processed substrate. Both technologies are presented here from the point of view of material analysis as well as device processing demonstration. For etching, the gate recess of an InP-based HEMT has been addressed as one of the key technological step that requires such properties for good device performances. InGaAs/InAlAs HEMT like structures have been grown and the recess of the InGaAs layer has been conducted with a 13eV SiCl4 inductively coupled plasma (ICP). DLTS and AFM measurements made on the exposed AlinAs surface after InGaAs removal indicate that device quality on its electrical and structural properties are achieved. Passivation of fully processed HEMT devices with a ICP enhanced chemical vapor deposition (ICPECVD) silicon nitride film is being studied.

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