Electromigration in Thin Films of Au on GaAs

1989 ◽  
Vol 167 ◽  
Author(s):  
P. F. Tang ◽  
A. G. Milnes ◽  
C. L. Bauer ◽  
S. Mahajan
Keyword(s):  
Thin Films ◽  
Grain Boundary ◽  
Time To Failure ◽  
Triple Junctions ◽  
Flux Divergence ◽  
Boundary Triple ◽  
Log Normal ◽  
Mean Time ◽  
Selection Of ◽  
Good Agreement

AbstractEvolution of the fractional change of electrical resistance ΔR/R in thin films of Au on (001) substrates of semi-insulating GaAs has been investigated as a function of time t, temperature T, and current density j. Initially, ΔR/R increases linearly with increasing t for constant T and j, and exponentially with increasing T for constant t and j, characterized by an activation energy of 0.73 eV. An analytical model is developed to evaluate ΔR/R for the early stages of electromigration. This model is based on flux divergence at grain boundary triple junctions resulting from variations of grain boundary inclination and/or diffusivity. Using a Monte Carlo method, conducting lines containing a prescribed number of random triple junctions are simulated, wherein distribution of mass flux divergence determines initial values of ΔR/R. Moreover, by selection of an appropriate failure criterion, the sequence of cumulative failures is characterized by a log-normal-like distribution, which defines mean time to failure and corresponding standard deviation. In general, the model is in good agreement with experimental observations.

Influence of Triple Junction Structure on Cu Segregation in Al Thin Films

1999 ◽  
Vol 5 (S2) ◽  
pp. 846-847
Author(s):  
C.J. Wauchope ◽  
R.R. Keller ◽  
J.E. Sanchez
Keyword(s):  
Thin Films ◽  
Grain Boundary ◽  
Integrated Circuit ◽  
Void Formation ◽  
Triple Line ◽  
Triple Junctions ◽  
Flux Divergence ◽  
Cu Films ◽  
Nucleation Sites ◽  
Dislocation Arrays

Al thin films, used as interconnects in integrated circuit devices, are subject to voiding failures due to electromigration and stress. Electromigration is a diffusion process and voids are known to form at points of flux divergence such as triple junctions. Void formation in Al-Cu films has also been associated with 9θ-phase (Al2 Cu) precipitates [1], which form preferentially at grain boundaries and triple junctions. Some triple junctions are favored as nucleation sites [2], presumably due to energetic differences arising from the crystallographic nature of the junctions. Their character can be calculated from the crystallographic orientations of the surrounding grains and the associated grain boundary dislocation networks [3]. Bollmann's method of analysis results in two categories of triple lines: I-lines - the special case where the grain boundary dislocations balance; and U-lines - the general case where the dislocation arrays do not balance. U-lines should have higher energies than I-lines and should therefore behave differently [3, 4]. This paper investigates the relationship between triple-line character and the location of Al2 Cu precipitates at certain triple junctions in Al-lCu thin films.

scholarly journals The Use of Statistical Inference in the Water Supply Network Managing Operation Process

2019 ◽  
Vol 49 (4) ◽  
pp. 221-244
Author(s):  
Izabela Piegdoń
Keyword(s):  
Water Supply ◽  
Time To Failure ◽  
Supply Network ◽  
Water Supply Network ◽  
Time Between Failures ◽  
Operation Process ◽  
Safety And Reliability ◽  
Mean Time ◽  
Operational Data ◽  
Selection Of

Abstract Based on operational data concerning the dates of failure of the water supply network, a mean time to failure was performed. The calculations were performed for the main network, distribution network and water supply connections. The hypothesis about exponential working time between failures was verified using the Pearson test (χ2). The presented analyses provide an attitude of further analyses related to modelling the work of renovation and repair teams, associated with the selection of their appropriate number, and also to ensure the required level of safety and reliability of water supply to the consumers.

Wandering and nanolaminated structures of grain boundary triple junctions in tungsten

2020 ◽  
Vol 260 ◽  
pp. 126980
Author(s):  
T.I. Mazilova ◽  
E.V. Sadanov ◽  
I.V. Starchenko ◽  
I.M. Mikhailovskij
Keyword(s):  
Grain Boundary ◽  
Triple Junctions ◽  
Boundary Triple

scholarly journals Energetics and structure of grain boundary triple junctions in graphene

2017 ◽  
Vol 7 (1) ◽  
Author(s):  
Petri Hirvonen ◽  
Zheyong Fan ◽  
Mikko M. Ervasti ◽  
Ari Harju ◽  
Ken R. Elder ◽  
...  
Keyword(s):  
Grain Boundary ◽  
Triple Junctions ◽  
Boundary Triple

scholarly journals Ion Beam Enhanced Grain Growth in Thin Films

1986 ◽  
Vol 74 ◽  
Author(s):  
Harry A. Atwater ◽  
Carl V. Tiiompson ◽  
Henry I. Smith
Keyword(s):  
Thin Films ◽  
Growth Rate ◽  
Grain Boundary ◽  
Grain Growth ◽  
Thermal Equilibrium ◽  
Ion Beam ◽  
Defect Concentration ◽  
Growth Enhancement ◽  
Frenkel Defect ◽  
Good Agreement

AbstractIon beam enhanced grain growth has been investigated in thin films of Ge. Grain boundary mobilities are greatly enhanced over their thermal equilibrium values and exhibit a very weak temperature dependence. We propose that defects which are generated by the ion beam at or near the grain boundary are responsible for the boundary mobility enhancement. Films of Ge deposited under different conditions, either unsupported or on thermally oxidized Si, exhibit similar normal grain growth enhancement when implanted with 50 keV Ge+. Beam-enhanced grain growth in Ge was also demonstrated using Xe+, Kr+, and Ar+ ions. The variation in growth enhancement with projectile ion mass is in good agreement with the enhanced Frenkel defect population calculated using a modified Kinchin-Pease formula and Monte Carlo simulation of ion transport in thin films. Calculations based on experiments suggest that there is approximately one atomic jump across the grain boundary per defect generated. Also, the grain growth rate for a given beam-generated defect concentration near the boundary is approximately equal to the expected growth rate for the same defect concentration if thermally generated.

Evaluation of Plastic Work Density, Strain Energy and Slip Multiplication Intensity at Some Typical Grain Boundary Triple Junctions

2010 ◽  
Vol 654-656 ◽  
pp. 1283-1286 ◽  
Author(s):  
Tetsuya Ohashi ◽  
Michihiro Sato ◽  
Yuhki Shimazu
Keyword(s):  
Grain Boundary ◽  
Grain Boundaries ◽  
Crystal Plasticity ◽  
Strain Energy ◽  
Plastic Work ◽  
Slip Systems ◽  
Triple Junctions ◽  
Plastic Slip ◽  
Boundary Triple

Plastic slip deformations of tricrystals with simplified geometries are numerically analyzed by a FEA-based crystal plasticity code. Accumulation of geometrically necessary (GN) dislocations, distributions of the total slip, plastic work density and GN dislocations on slip systems, as well as some indices for the intensity of slip multiplication are evaluated. Results show that coexistence of GN dislocations on different slip systems is prominent at triple junctions of grain boundaries.

scholarly journals DEGRADATION ANALYSIS OF PROBABILISTIC PARALLEL CHOICE SYSTEMS

2014 ◽  
Vol 21 (03) ◽  
pp. 1450012
Author(s):  
AVINASH SAXENA ◽  
SHRISHA RAO
Keyword(s):  
Complete System ◽  
System Failure ◽  
Time To Failure ◽  
Probabilistic Choice ◽  
Mean Time Between Failures ◽  
System Parameters ◽  
Time Between Failures ◽  
Degradation Analysis ◽  
Mean Time ◽  
Selection Of

Degradation analysis is used to analyze the useful lifetimes of systems, their failure rates, and various other system parameters like mean time to failure (MTTF), mean time between failures (MTBF), and the system failure rate (SFR). In many systems, certain possible parallel paths of execution that have greater chances of success are preferred over others. Thus we introduce here the concept of probabilistic parallel choice. We use binary and n-ary probabilistic choice operators in describing the selections of parallel paths. These binary and n-ary probabilistic choice operators are considered so as to represent the complete system (described as a series-parallel system) in terms of the probabilities of selection of parallel paths and their relevant parameters. Our approach allows us to derive new and generalized formulae for system parameters like MTTF, MTBF, and SFR. We use a generalized exponential distribution, allowing distinct installation times for individual components, and use this model to derive expressions for such system parameters.

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