Electrodeposition of 3-D Size-Quantized Cds and CdSe Films

1989 ◽  
Vol 164 ◽  
Author(s):  
G. Hodes ◽  
T. Engelhard ◽  
A. Albu-Yaron ◽  
A. Pettford-Long

AbstractCdS and CdSe films electrodeposited from chalcogen-containing non-aqueous electrolytes are shown to possess a nanocrystalline structure and exhibit 3-D quantum size effects. A large variation in optical transmission spectra, due for the most part to this sizequantization, is shown. Photoelectrochemical activity of the as-deposited films is discussed in terms of their nano-structure. Extension of the crystallite size effects to a metalinsulator transition in MoO2 deposited from a similar electrolyte is mentioned.

1987 ◽  
Vol 51 (7) ◽  
pp. 478-480 ◽  
Author(s):  
Akihiro Ishida ◽  
Shuji Matsuura ◽  
Makoto Mizuno ◽  
Hiroshi Fujiyasu

1991 ◽  
Vol 16 (6) ◽  
pp. 623-638 ◽  
Author(s):  
P.A. Badoz ◽  
F. Arnaud d'Avitaya ◽  
E. Rosencher

1983 ◽  
Vol 44 (C10) ◽  
pp. C10-375-C10-378 ◽  
Author(s):  
P. Ahlqvist ◽  
P. de Andrés ◽  
R. Monreal ◽  
F. Flores

1968 ◽  
Vol 96 (9) ◽  
pp. 61-86 ◽  
Author(s):  
B.A. Tavger ◽  
V.Ya. Demikhovskii

1997 ◽  
Vol 229 (6) ◽  
pp. 401-405 ◽  
Author(s):  
A. Crépieux ◽  
C. Lacroix ◽  
N. Ryzhanova ◽  
A. Vedyayev

2006 ◽  
Vol 100 (11) ◽  
pp. 114905 ◽  
Author(s):  
M. Cattani ◽  
M. C. Salvadori ◽  
A. R. Vaz ◽  
F. S. Teixeira ◽  
I. G. Brown

1993 ◽  
Vol 97 (37) ◽  
pp. 9493-9498 ◽  
Author(s):  
Ladislav Kavan ◽  
Tiziana Stoto ◽  
Michael Graetzel ◽  
Donald Fitzmaurice ◽  
Valery Shklover

1992 ◽  
Vol 283 ◽  
Author(s):  
R. Tsu ◽  
L. Ioriatti ◽  
J. F. Harvey ◽  
H. Shen ◽  
R. A. Lux

ABSTRACTThe reduction of the dielectric constant due to quantum confinement is studied both experimentally and theoretically. Angle resolved ellipsometry measurements with Ar- and He-Ne-lasers give values for the index of refraction far below what can be accounted for from porosity alone. A modified Penn model to include quantum size effects has been used to calculate the reduction in the static dielectric constant (ε) with extreme confinement. Since the binding energy of shallow impurities depends inversely on ε2, the drastic decrease in the carrier concentration as a result of the decrease in ε leads to a self-limiting process for the electrochemical etching of porous silicon.


2006 ◽  
Vol 89 (18) ◽  
pp. 183109 ◽  
Author(s):  
Tie-Zhu Han ◽  
Guo-Cai Dong ◽  
Quan-Tong Shen ◽  
Yan-Feng Zhang ◽  
Jin-Feng Jia ◽  
...  

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