Selective Deposition of N+ Doped MC-SI:H:F by Rf Plasma Cvd on Si and S1O2 Substrates

1989 ◽  
Vol 164 ◽  
Author(s):  
K. Baert ◽  
P. Deschepper ◽  
H. Pattyn ◽  
J. Nijs ◽  
R. Mertens
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Growth Process ◽  
Selective Growth ◽  
Rf Plasma ◽  
Plasma Cvd ◽  
Selective Deposition ◽  
Si Substrates ◽  
Si Thin Film

Abstractμc-Si:H:F can be deposited by if plasma-CVD of fluorinated gas sources like SiF4 and SiH2F2, mixed with H2 and/or SiH4. However, this growth process is usually not selective: the layers are deposited on SiO2 as well as on Si substrates. In this paper, selective growth from SiF4 + SiH4 is reported. N+ Si layers were deposited on <100> Si and poly-Si with a conductivity up to 300 resp. 100 S/cm. The selective growth process was applied for Source and Drain regions of poly-Si thin film transistors on insulating substrate.

Large-Area Doping for Poly-Si Thin Film Transistors Using Bucket Ion Source with an RF Plasma Cathode

1991 ◽  
Vol 30 (Part 2, No. 4B) ◽  
pp. L772-L774
Author(s):  
Genshiro Kawachi ◽  
Takashi Aoyama ◽  
Takaya Suzuki ◽  
Yasunori Ohno ◽  
Akio Mimura ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Ion Source ◽  
Rf Plasma ◽  
Large Area ◽  
Plasma Cathode ◽  
Si Thin Film

Fabrication of Micro- and Nanoscale SiC Structures Using Selective Deposition Processes

2003 ◽  
Vol 782 ◽  
Author(s):  
L. Chen ◽  
X. A. Fu ◽  
C. A. Zorman ◽  
M. Mehregany
Keyword(s):  
Thin Film ◽  
Growth Process ◽  
Electrochemical Etching ◽  
Nanometer Scale ◽  
Selective Deposition ◽  
Si Substrates ◽  
Deposition Processes ◽  
Sic Films ◽  
Stable Structures

ABSTRACTA method to fabricate nanometer scale SiC beams and nanoporous SiC shells using conventional microlithographic techniques combined with selective APCVD has been developed as an alternative to nanolithographic patterning and electrochemical etching. The process involves the selective deposition of poly-SiC films on patterned SiO2/polysilicon/SiO2 thin film multilayers on (100) Si substrates using a carbonization-based 3C-SiC growth process. This technique capitalizes on significant differences in the nucleation of SiC on SiO2 and polysilicon surfaces in order to form mechanically durable and chemically stable structures.

Effect of the Grain Growth Process on the Characteristics for the Excimer Laser Crystallized Poly-Si Thin Film Transistors

1995 ◽  
Vol 403 ◽  
Author(s):  
Hiroshi Okumura ◽  
Hiroshi Tanabe ◽  
Fujio Okumura
Keyword(s):  
Thin Film ◽  
Grain Boundary ◽  
Grain Growth ◽  
Excimer Laser ◽  
Thin Film Transistors ◽  
Lower Energy ◽  
Growth Process ◽  
The Other ◽  
Columnar Grains ◽  
Si Thin Film

AbstractWe have found, for excimer laser crystallized poly-Si thin films, that there are two different grain growth processes that depend on the energy density. Columnar grains grow laterally at lower energy densities. The other grain growth process at higher energy densities is shown to be secondary grain growth caused by a less oriented structure with fine granular grains. A TFT with the maximum mobility is obtained at the border for the lower energy grain growth. Grain boundary and intragrain defects around grain boundary formed through the secondary grain growth reduce the mobility in spite of considerable grain enlargement.

scholarly journals Improved Negative Bias Stress Stability of Sol–Gel-Processed Li-Doped SnO2 Thin-Film Transistors

Electronics ◽  
2021 ◽  
Vol 10 (14) ◽  
pp. 1629
Author(s):  
Hyeon-Joong Kim ◽  
Do-Won Kim ◽  
Won-Yong Lee ◽  
Sin-Hyung Lee ◽  
Jin-Hyuk Bae ◽  
...  
Keyword(s):  
Thin Film ◽  
Oxygen Vacancy ◽  
Thin Film Transistors ◽  
Sol Gel ◽  
Sno2 Thin Film ◽  
Negative Bias ◽  
Semiconductor Films ◽  
Saturation Regime ◽  
Si Substrates ◽  
Ionic Size

In this study, sol–gel-processed Li-doped SnO2-based thin-film transistors (TFTs) were fabricated on SiO2/p+ Si substrates. The influence of Li dopant (wt%) on the structural, chemical, optical, and electrical characteristics was investigated. By adding 0.5 wt% Li dopant, the oxygen vacancy formation process was successfully suppressed. Its smaller ionic size and strong bonding strength made it possible for Li to work as an oxygen vacancy suppressor. The fabricated TFTs consisting of 0.5 wt% Li-doped SnO2 semiconductor films delivered the field-effect mobility in a 2.0 cm2/Vs saturation regime and Ion/Ioff value of 1 × 108 and showed enhancement mode operation. The decreased oxygen vacancy inside SnO2 TFTs with 0.5 wt% Li dopant improved the negative bias stability of TFTs.

Double-metal-gate nanocrystalline Si thin film transistors with flexible threshold voltage controllability

2013 ◽  
Vol 103 (20) ◽  
pp. 203501 ◽  
Author(s):  
Uio-Pu Chiou ◽  
Jia-Min Shieh ◽  
Chih-Chao Yang ◽  
Wen-Hsien Huang ◽  
Yo-Tsung Kao ◽  
...  
Keyword(s):  
Thin Film ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Metal Gate ◽  
Si Thin Film ◽  
Nanocrystalline Si

Influence of melt depth in laser crystallized poly-Si thin film transistors

1997 ◽  
Vol 82 (8) ◽  
pp. 4086-4094 ◽  
Author(s):  
S. D. Brotherton ◽  
D. J. McCulloch ◽  
J. P. Gowers ◽  
J. R. Ayres ◽  
M. J. Trainor
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Si Thin Film

Channel doping effects in poly-Si thin film transistors

2005 ◽  
Vol 487 (1-2) ◽  
pp. 242-246 ◽  
Author(s):  
A. Valletta ◽  
L. Mariucci ◽  
A. Bonfiglietti ◽  
G. Fortunato ◽  
S.D. Brotherton
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Doping Effects ◽  
Si Thin Film
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