High-Efficiency Solar Cells from Extremely Low Minority Carrier Lifetime Substrates Using Radial Junction Nanowire Architecture

ACS Nano ◽  
2019 ◽  
Vol 13 (10) ◽  
pp. 12015-12023 ◽  
Author(s):  
Vidur Raj ◽  
Kaushal Vora ◽  
Lan Fu ◽  
Hark H. Tan ◽  
Chennupati Jagadish
Keyword(s):  
Solar Cells ◽  
High Efficiency ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
High Efficiency Solar Cells

Relationship Between Minority Carrier Parameters and Solar Cell Characteristics of Electromagnetic Cast Polycrystalline Silicon

1993 ◽  
Vol 324 ◽  
Author(s):  
Eiichi Suzuki ◽  
Kyojiro Kaneko ◽  
Toru Nunoi
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Polycrystalline Silicon ◽  
High Efficiency ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Small Variation ◽  
Minority Carrier Lifetime ◽  
The Relationship ◽  
And Diffusion

AbstractThe relationship between minority carrier properties and solar cell characteristics of electromagnetic (EM) cast polycrystalline Si has experimentally been investigated. The minority carrier lifetime τ and diffusion coefficient D were evaluated by a novel dual mercury probe method. The solar cell characteristics, e.g., a conversion efficiency η were measured by fabricating experimental solar cells using the corresponding wafers. The wafer showing high-η (13.1%) has relatively high τ (av. 8.2 μs) with small variation of I) (av. 29.6 cm2/s). On the contrary, the low-η (11%) wafer shows low τ (av. 1.1 μs), including some inferior portions with very low τ of less than 0.5 μs. It is also shown that D drastically deteriorates with decreasing τ if τ is less than around 2 μs. To realize high efficiency polycrystalline solar cells, the wafers with high value of τ and without considerably low-τ portions are needed.

Development of High-Performance GaAs Solar Cells on Large-Grain Polycrystalline Ge Substrates

1995 ◽  
Vol 403 ◽  
Author(s):  
R. Venkatasubramanian ◽  
B. O'Quinn ◽  
J. S. Hills ◽  
M. L. Timmons ◽  
D. P. Malta
Keyword(s):  
Solar Cells ◽  
High Performance ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Cross Sectional ◽  
Plan View ◽  
Electron Beam Induced Current ◽  
Induced Defects

AbstractThe characterization of MOCVD-grown GaAs-AlGaAs materials and GaAs p+n junctions on poly-Ge substrates is presented. Minority carrier lifetime in GaAs-AIGaAs double-hetero (DH) structures grown on these substrates and the variation of lifetimes across different grainstructures are discussed. Minority-carrier diffusion lengths in polycrystalline GaAs p+-n junctions were evaluated by cross-sectional electron-beam induced current (EBIC) scans. The junctions were also studied by plan-view EBIC imaging. Optimization studies of GaAs solar cell on poly-Ge are discussed briefly. The effect of various polycrystalline substrate-induced defects on performance of GaAs solar cells are presented.

scholarly journals Minority Carrier Lifetime Measurement in Nanowire Based Solar Cells by a Reverse Recovery Transient Method

2014 ◽  
Vol 60 ◽  
pp. 181-190
Author(s):  
M. Daanoune ◽  
D. Kohen ◽  
A. Kaminski-Cachopo ◽  
C. Morin ◽  
P. Faucherand ◽  
...  
Keyword(s):  
Solar Cells ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Lifetime Measurement ◽  
Transient Method

Casting Single Crystal Silicon: Novel Defect Profiles from BP Solar's Mono2 TM Wafers

2007 ◽  
Vol 131-133 ◽  
pp. 1-8 ◽  
Author(s):  
Nathan Stoddard ◽  
Bei Wu ◽  
Ian Witting ◽  
Magnus C. Wagener ◽  
Yongkook Park ◽  
...  
Keyword(s):  
Solar Cells ◽  
Crystal Growth ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Single Crystal Silicon ◽  
Minority Carrier Lifetime ◽  
Crystal Silicon ◽  
Growth Method ◽  
Screen Print ◽  
The Impact

A novel crystal growth method has been developed for the production of ingots, bricks and wafers for solar cells. Monocrystallinity is achievable over large volumes with minimal dislocation incorporation. The resulting defect types, densities and interactions are described both microscopically for wafers and macroscopically for the ingot, looking closely at the impact of the defects on minority carrier lifetime. Solar cells of 156 cm2 size have been produced ranging up to 17% in efficiency using industrial screen print processes.

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