Modeling of the Diffusion of Hydrogen in Silicon

1989 ◽  
Vol 163 ◽  
Author(s):  
D. Mathiot ◽  
D. Ballutaud ◽  
P. De Mierry ◽  
M. Aucouturier
Keyword(s):  
High Temperature ◽  
Boron Concentration ◽  
Temperature Data ◽  
The Other ◽  
Systematic Variation ◽  
Hydrogen Trapping ◽  
Other Hand ◽  
High Temperature Data ◽  
P Type ◽  
Diffusion Of Hydrogen

AbstractA model is proposed to describe hydrogen motion in silicon near 150°C. This model leads to a consistent view of H° behaviour in low doped n and p-type Si, with a diffusivity in agreement with the high temperature data. On the other hand, a systematic variation of DH+ with the boron concentration forces us to conclude that some still unknown interactions take place and contribute to hydrogen trapping in highly doped p-Si.

Oxygen-doped Sb4Te phase change films for high-temperature data retention and low-power application

2013 ◽  
Vol 551 ◽  
pp. 551-555 ◽  
Author(s):  
Yifeng Hu ◽  
Mingcheng Sun ◽  
Sannian Song ◽  
Zhitang Song ◽  
Jiwei Zhai
Keyword(s):  
High Temperature ◽  
Low Power ◽  
Phase Change ◽  
Temperature Data ◽  
Data Retention ◽  
High Temperature Data ◽  
Power Application

Trypanosoma cruzi Epimastigotes Express the Ouabain-and Vanadate-Sensitive (Na++K+)ATPase Activity

1998 ◽  
Vol 53 (11-12) ◽  
pp. 1049-1054 ◽  
Author(s):  
Celso Caruso-Neves ◽  
Marcelo Einicker-Lamas ◽  
Carlos Chagas ◽  
Mecia Maria Oliveira ◽  
Adalberto Vieyra ◽  
...  
Keyword(s):  
Trypanosoma Cruzi ◽  
Atpase Activity ◽  
The Other ◽  
Other Hand ◽  
P Type

Abstract The presence of (Na++K+)ATPase activity in CL14 clone and NIH NTY strain of Trypano­soma cruzi epimastigotes is demonstrated. A Na+ plus K+ stimulated ATPase activity is found in both strains. The optimal Na+/K+ ratio is 5:1 and 9:1 in CL14 clone and NIH NTY strain, respectively. In both strains, vanadate completely inhibits the ouabain-sensitive ATPase activ­ity indicating that it belongs to the P-type (E 1/E2) family of ion-transporting ATPases. The I50 for vanadate is 0.66 ± 0.04 and 0.04 ± 0.02 μᴍ in CL14 clone and NIH NTY strain, respectively. These data indicate that both strains of T. cruzi epimastigotes express the oua­ bain-and vanadate-sensitive (Na++K+)ATPase activity. On the other hand, the discrepancy between the parameters analyzed for the inhibitors suggests that they express different iso­ forms of this enzyme.

Voltage-Current (V-I) Characteristics of 1.5kV Class pn Junctions with p-Well Structures on (0001) 4H-SiC

2009 ◽  
Vol 615-617 ◽  
pp. 683-686 ◽  
Author(s):  
Ryouji Kosugi ◽  
T. Sakata ◽  
Y. Sakuma ◽  
K. Suzuki ◽  
Tsutomu Yatsuo ◽  
...  
Keyword(s):  
High Temperature ◽  
The Other ◽  
Annealing Condition ◽  
Test Element ◽  
Significant Deterioration ◽  
Other Hand ◽  
Pn Junctions ◽  
Short Time ◽  
Diode Voltage ◽  
Ion Implanted

We have fabricated the four pn-type junction TEGs (Test Element Groups) having different structure. Those TEGs are close to the double-implanted (Di) MOSFETs, step by step from the simple pn diode. Voltage-current (V-I) characteristics of the hundred TEGs having p-well structure show similar blocking characteristics of those of simple pn diodes on the same wafer. This indicates that the p-well structure itself does not cause a significant deterioration on the blocking yield. On the other hand, the yield is significantly influenced by the annealing condition for ion-implanted layer. The oxide-related hard breakdown on the JFET region dominates the blocking yield. The reach-through breakdown of the TEGs having the n+ region within each p-well becomes largely suppressed by the high-temperature and short-time annealing.

Study on stabilization of cubic Li7La3Zr2O12 by Ge substitution in various atmospheres

2016 ◽  
Vol 09 (06) ◽  
pp. 1642005 ◽  
Author(s):  
Masashi Kotobuki ◽  
Binngong Yan ◽  
Li Lu ◽  
Emil Hanc ◽  
Joanna Molenda
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Tetragonal Phase ◽  
The Other ◽  
Cubic Phase ◽  
Other Hand ◽  
High Temperature Xrd ◽  
Li Ion

Stabilization of high Li ion conductive cubic Li7La3Zr2O[Formula: see text] (LLZ) by Ge substitution in air, N2/O2 and N2 atmospheres are studied by high temperature XRD (HT-XRD) of Ge-added tetragonal LLZ (Ge-LLZ). A formation of low temperature cubic phase caused by CO2 absorption during storage of the Ge-LLZ is observed at about 160[Formula: see text]C in all atmospheres. Additionally, impurity formation of La2Zr2O7 and La2O3 also occurs in all atmospheres. On the other hand, stabilization of cubic phase by substitution of Ge is largely influenced by the atmosphere. The cubic phase is observed at 40[Formula: see text]C after heating Ge-LLZ to 700[Formula: see text]C in air while only tetragonal phase appeared after heating in N2/O2. It is concluded that the heating atmosphere largely influences substitution of Ge, resulting in stabilization of the high Li ion conductive cubic phase.

scholarly journals Understanding the asymmetrical thermoelectric performance for discovering promising thermoelectric materials

2019 ◽  
Vol 5 (6) ◽  
pp. eaav5813 ◽  
Author(s):  
Hangtian Zhu ◽  
Jun Mao ◽  
Zhenzhen Feng ◽  
Jifeng Sun ◽  
Qing Zhu ◽  
...  
Keyword(s):  
Power Generation ◽  
High Temperature ◽  
Thermoelectric Power ◽  
Conversion Efficiency ◽  
Thermoelectric Materials ◽  
The Other ◽  
Thermoelectric Performance ◽  
Cold Side ◽  
P Type ◽  
The Relationship

Thermoelectric modules, consisting of multiple pairs of n- and p-type legs, enable converting heat into electricity and vice versa. However, the thermoelectric performance is often asymmetrical, in that one type outperforms the other. In this paper, we identified the relationship between the asymmetrical thermoelectric performance and the weighted mobility ratio, a correlation that can help predict the thermoelectric performance of unreported materials. Here, a reasonably high ZT for the n-type ZrCoBi-based half-Heuslers is first predicted and then experimentally verified. A high peak ZT of ~1 at 973 K can be realized by ZrCo0.9Ni0.1Bi0.85Sb0.15. The measured heat-to-electricity conversion efficiency for the unicouple of ZrCoBi-based materials can be as high as ~10% at the cold-side temperature of ~303 K and at the hot-side temperature of ~983 K. Our work demonstrates that the ZrCoBi-based half-Heuslers are highly promising for the application of mid- and high-temperature thermoelectric power generation.

Material Properties as Indicators of Machining Behavior

1999 ◽  
Author(s):  
Robin Stevenson
Keyword(s):  
High Temperature ◽  
High Strain Rate ◽  
Strain Rate ◽  
Deformation Mechanism ◽  
Material Properties ◽  
High Strain ◽  
Temperature Data ◽  
Test Procedures ◽  
High Temperature Data ◽  
Conventional Material

Abstract This paper demonstrates that the material properties developed using conventional material test procedures can be consistent with those developed during machining. However if extensive extrapolation is required to develop the high strain/high strain rate/high temperature data characteristic of machining, it is important to ensure that no change in deformation mechanism occurs over the extrapolation range. If such a mechanism change does occur the extrapolated data will be invalid.

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