Optical Properties of Novel Vibronic Bands in Electron-Irradiated Tin Doped Silicon

1989 ◽  
Vol 163 ◽  
Author(s):  
J. H. Svensson ◽  
B. Monemar ◽  
B. G. Svensson
Keyword(s):  
Optical Properties ◽  
Low Temperatures ◽  
Excited Electronic State ◽  
Electronic States ◽  
Optical Excitation ◽  
Electronic Transitions ◽  
Vibrational States ◽  
Doped Silicon ◽  
Silicon Doped ◽  
Excitation Conditions

AbstractThe optical absorption of two new electronic transitions in silicon doped with tin has been investigated. At low temperatures two no-phonon lines are observed at 2755.3 and 4112.2 cm-1, each with strong coupling to a single quasi-localized vibration in the excited electronic state. These vibrations have quantum energies of 69.6 and 70.2 cm-1, respectively. At higher temperatures coupling to thermally excited vibrational states in the ground electronic states is observed for both lines. The transition with the no-phonon line at 4112.2 cm-1 has been studied in detail and is found to be well described using the adiabatic and Condon approximations. The optical properties of the two transitions are found to be quite similar. Moreover the relative intensities of the two lines are found to be dependent on the optical excitation conditions.

Localization of Hydrogen in B and in Doped Silicon by ion Channeling and PAC

1987 ◽  
Vol 104 ◽  
Author(s):  
Th. Wichert ◽  
H. Skudlik ◽  
H. -D. Carstanjen ◽  
T. Enders ◽  
M. Deicher ◽  
...  
Keyword(s):  
Low Temperatures ◽  
Lattice Site ◽  
Ion Beam ◽  
Tetrahedral Site ◽  
Ion Channeling ◽  
Pac Technique ◽  
Doped Silicon ◽  
Bond Center ◽  
Silicon Doped ◽  
Center Site

ABSTRACTThe lattice site of H/D atoms in silicon doped with B and 111In atoms is investigated using the ion channeling and perturbed γγ angular correlation (PAC) technique. The results indicate that at 295 K the antibonding site is occupied by H/D and that this site is easily transformed into a near tetrahedral site under the influence of an analyzing ion beam. Based on PAC results, the population of a second site, possibly a bond-center site, is expected at low temperatures.

scholarly journals Highly efficient THz four-wave mixing in doped silicon

2021 ◽  
Vol 10 (1) ◽  
Author(s):  
Nils Dessmann ◽  
Nguyen H. Le ◽  
Viktoria Eless ◽  
Steven Chick ◽  
Kamyar Saeedi ◽  
...  
Keyword(s):  
Four Wave Mixing ◽  
Wave Mixing ◽  
Optical Nonlinearities ◽  
Third Order ◽  
Picosecond Pulses ◽  
Light Pulses ◽  
A Value ◽  
Doped Silicon ◽  
Perturbative Regime ◽  
Silicon Doped

AbstractThird-order non-linearities are important because they allow control over light pulses in ubiquitous high-quality centro-symmetric materials like silicon and silica. Degenerate four-wave mixing provides a direct measure of the third-order non-linear sheet susceptibility χ(3)L (where L represents the material thickness) as well as technological possibilities such as optically gated detection and emission of photons. Using picosecond pulses from a free electron laser, we show that silicon doped with P or Bi has a value of χ(3)L in the THz domain that is higher than that reported for any other material in any wavelength band. The immediate implication of our results is the efficient generation of intense coherent THz light via upconversion (also a χ(3) process), and they open the door to exploitation of non-degenerate mixing and optical nonlinearities beyond the perturbative regime.

scholarly journals Valence Band Mixing in GaAs/AlGaAs Quantum Wells Adjacent to Self-Assembled InAlAs Antidots

2019 ◽  
Vol 2019 ◽  
pp. 1-7
Author(s):  
Takuya Kawazu
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Valence Band ◽  
Energy Barrier ◽  
Heavy Hole ◽  
Electronic States ◽  
Light Hole ◽  
Photoluminescence Excitation ◽  
Band Mixing ◽  
Valence Band Mixing

Optical properties of GaAs/AlGaAs quantum wells (QWs) in the vicinity of InAlAs quantum dots (QDs) were studied and compared with a theoretical model to clarify how the QD strain affects the electronic states in the nearby QW. In0.4Al0.6As QDs are embedded at the top of the QWs; the QD layer acts as a source of strain as well as an energy barrier. Photoluminescence excitation (PLE) measurements showed that the QD formation leads to the increase in the ratio Ie-lh/Ie-hh of the PLE intensities for the light hole (lh) and the heavy hole (hh), indicating the presence of the valence band mixing. We also theoretically calculated the hh-lh mixing in the QW due to the nearby QD strain and evaluated the PLE ratio Ie-lh/Ie-hh.

scholarly journals Photoluminescence Activity of Neodymium-Doped Gallium Oxide Thin Films

2008 ◽  
Vol 1111 ◽  
Author(s):  
Celine Lecerf ◽  
Philippe Marie ◽  
Cedric Frilay ◽  
Julien Cardin ◽  
Xavier Portier
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Substrate Temperature ◽  
Gallium Oxide ◽  
Electronic Transitions ◽  
Oxide Thin Films ◽  
Structural And Optical Properties ◽  
Luminescence Efficiency

AbstractPhotoluminescence activity was observed for neodymium-doped gallium oxide thin films prepared by radiofrequency magnetron co-sputtering. Structural and optical properties of as-grown and annealed films were studied and photoluminescence activity was especially investigated. The most intense lines were associated to the 4F3/2  4I9/2 and 4F3/2  4I11/2 electronic transitions of Nd3+. The effects of deposition and treatment parameters such as the substrate temperature, the post anneal treatment or the neodymium content in the films were particularly examined with the aim to reach the best luminescence efficiency.

Oxygen Stoichiometry and the High Tc Superconducting Oxides

MRS Bulletin ◽  
1989 ◽  
Vol 14 (1) ◽  
pp. 53-57 ◽  
Author(s):  
J-M. Tarascon ◽  
B.G. Bagley
Keyword(s):  
Optical Properties ◽  
Liquid Nitrogen ◽  
Broad Spectrum ◽  
Low Temperatures ◽  
Large Family ◽  
Oxygen Stoichiometry ◽  
High Tc ◽  
Metallic Conductivity ◽  
Superconducting Oxides ◽  
Technological Interest

Oxide compounds have been extensively studied through the years because they exhibit a broad spectrum of electrical, magnetic, and optical properties providing both scientific and technological interest. Most oxides are insulators, but a few of them (e.g., LiTi2O4 or BaPb1−x BixO3 show metallic conductivity and even superconductivity at low temperatures. The discovery of superconductivity at 35 K by Bednorz and Müller in the cuprate La-Ba-Cu-O system prompted the search for other high Tc compounds among this oxide family. Superconductivity above liquid nitrogen was then rapidly achieved with the Y-Ba-Cu-O system (Tc=90 K) and subsequently, with the Bi-Sr-Ca-Bu-O and Tl-Ba-Ca-Cu-O systems, Tc was raised to 110 K and then 125 K.A common feature of these new high Tc cuprates is that they belong to the large family of materials, termed perovskites, which have been studied over the years because of their ability to absorb or lose oxygen reversibly (i.e., for their nonstoichiometry in oxygen). It had been previously established in the field of superconductivity that Tc is extremely sensitive to compositional stoichiometry.

POLARIZATION PROPERTIES OF SYNCHROTRON RADIATION IN THE STUDY OF ANISOTROPIC INSULATING CRYSTALS

2002 ◽  
Vol 09 (01) ◽  
pp. 469-472
Author(s):  
V. N. KOLOBANOV ◽  
I. A. KAMENSKIKH ◽  
V. V. MIKHAILIN ◽  
I. N. SHPINKOV ◽  
D. A. SPASSKY ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Optical Properties ◽  
Energy Transfer ◽  
Synchrotron Radiation ◽  
Valence Band ◽  
Conduction Band ◽  
Electronic States ◽  
Absorption Region ◽  
New Information ◽  
Fundamental Absorption Region

The optical properties of a wide series of the tungstates with the scheelite and wolframite crystal structure at the threshold of the fundamental absorption region were studied. New information about the influence of the electronic states forming the bottom of the conduction band and the top of the valence band on the formation of emission centers and mechanisms of energy transfer to these centers was obtained.

Atomic structure, electronic states, and optical properties of epitaxially grown β-Ga2O3 layers

2018 ◽  
Vol 120 ◽  
pp. 90-100 ◽  
Author(s):  
D.A. Zatsepin ◽  
D.W. Boukhvalov ◽  
A.F. Zatsepin ◽  
Yu A. Kuznetsova ◽  
D. Gogova ◽  
...  
Keyword(s):  
Optical Properties ◽  
Atomic Structure ◽  
Electronic States
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