Growth and Physical Properties of rf-Magnetron Sputtered InN Semiconducting Films

1989 ◽  
Vol 162 ◽  
Author(s):  
W. A. Bryden ◽  
J. S. Morgan ◽  
T. J. Kistenmacher ◽  
D. Dayan ◽  
R. Fainchtein ◽  
...  
Keyword(s):  
Indium Nitride ◽  
Surface Oxidation ◽  
Rf Magnetron Sputtering ◽  
Nitrogen Vacancy ◽  
Morphological Properties ◽  
Electrical Mobility ◽  
Thermally Induced ◽  
General Decline ◽  
Reactive Rf Magnetron Sputtering ◽  
Quality Surface

ABSTRACTIndium nitride thin films have been deposited using reactive rf-magnetron sputtering and characterized by their electrical, structural and morphological properties. Films have been prepared on fused quartz and (0001) sapphire. Films deposited on sapphire at temperatures from 50–300°C are typified by a slowly increasing mobility and a transition from mixtures of epitaxial and textured grains to complete epitaxy. Comparisons of films deposited on quartz and sapphire (with two different surface preparations) indicates that electrical mobility is enhanced by the epitaxial nature of the material deposited on sapphire and that a higher quality surface finish results in superior films. Somewhat above 300°C the morphology of the epitaxial films changes from continuous to granular, with a concomitant loss in electrical connectivity. This manifests itself as a sharp rise in the resistivity of the film and hence a sharp decline in the mobility. The carrier concentration shows a general decline as the substrate temperature is increased, indicating that the mechanism of mobility degradation is probably not due to thermally induced nitrogen vacancy formation but more likely to unintentional oxygen doping. This is in accord with the surface oxidation observed in the films using Auger electron spectroscopy.

Morphology and Low Temperature Electrical Transport in Heteroepitaxial Indium Nitride Films

1992 ◽  
Vol 263 ◽  
Author(s):  
W. A. Bryden ◽  
S. A. Ecelberger ◽  
T. J. Kistenmacher
Keyword(s):  
Low Temperature ◽  
Temperature Dependence ◽  
Electrical Transport ◽  
Deposition Temperature ◽  
Amorphous Materials ◽  
Indium Nitride ◽  
Electrical Contact ◽  
Rf Magnetron Sputtering ◽  
Electrical Mobility ◽  
Reactive Rf Magnetron Sputtering

ABSTRACTThe correlation of low temperature electrical transport with the evolution of heteroepitaxy and morphology for sputtered indium nitride thin films has been studied. A series of indium nitride films were deposited at temperatures ranging from 50 -650 °C by reactive rf magnetron sputtering onto the (00.1) face of sapphire. Above 350 °C, a transition occurs from a continuous morphology, in which grains are in intimate electrical contact, to an open, porous morphology with poor electrical contact. This transition in morphology deeply affects the electrical transport of the semiconductor. At low deposition temperature, the electrical transport is dominated by the relatively weak intergrain scattering leading to films with moderate mobility. As the deposition temperature is raised, the increasingly porous nature of the film leads to a deterioration in electrical mobility. It is proposed here that the relevant physics of these films is analogous to that for granular solids with a distribution of electrical connectivities that suggests a scattering potential dominated by disorder. In fact, the temperature dependence of the resistivity is found to be analogous to that observed in disordered and amorphous materials. In particular, the resistivity is characterized by: 1) A very weak temperature dependence; 2) The observation of a resistance minimum; and, 3) A steep rise in the low temperature (<4K) resistivity that follows a T1/ dependence.

Sputter Deposition of Indium Nitride on The (111) Face of Elemental and Compound Semiconductors

1990 ◽  
Vol 202 ◽  
Author(s):  
J. S. Morgan ◽  
T. J. Kistenmacher ◽  
W. A. Bryden ◽  
S. A. Ecelberger
Keyword(s):  
Transport Properties ◽  
Electrical Transport ◽  
Lattice Mismatch ◽  
Indium Nitride ◽  
Rf Magnetron Sputtering ◽  
Film Structure ◽  
Electrical Mobility ◽  
Electrical Transport Properties ◽  
Structure Morphology ◽  
Structural Coherence

ABSTRACTThe structure, morphology, and transport properties of thin films of InN grown on several cubic semiconductors has been studied as a function of substrate temperature. Films were deposited using rf-magnetron sputtering onto the (111) face of GaAs, Ge, Si and ZrO2. In general, the film structure is such that (00.1)InN parallels the (111) plane of the cubic substrate above some deposition temperature. The in-plane structural coherence duplicates the magnitude of the calculated lattice mismatch between InN and the substrate. Electrical transport properties for growth onto (111) ZrO2 were characterized by n-type carrier concentration and mobilities ranging up to 44 cm2 /Vsec. A morphology-induced decrease in electrical mobility is observed for deposition temperatures above 350°C, as shown by SEM.

Thin films of rf-magnetron sputtered InN on mica: Crystallography, electrical transport, and morphology

1991 ◽  
Vol 6 (6) ◽  
pp. 1300-1307 ◽  
Author(s):  
T.J. Kistenmacher ◽  
W.A. Bryden ◽  
J.S. Morgan ◽  
D. Dayan ◽  
R. Fainchtein ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Transport ◽  
Large Fraction ◽  
Rf Magnetron Sputtering ◽  
Electrical Mobility ◽  
X Ray ◽  
X Ray Scattering ◽  
Substrate Temperatures ◽  
Reactive Rf Magnetron Sputtering

Reactive rf-magnetron sputtering has been employed for the growth of thin films of InN on the (001) face of mica at a variety of substrate temperatures from 50 to 550 °C. These films have been characterized by x-ray scattering, stylus profilometry, and electrical transport measurements, and their topography has been studied by SEM and STM. At low deposition temperatures, the InN films exhibit texture [(00.1)InN‖ (001)mica], while at higher deposition temperatures a large fraction of the grains are heteroepitaxial [(00.1)InN‖(001)mica, (2.0)InN · (060)mica]. The utility of the x-ray precession method in the determination of this heteroepitaxial relationship is highlighted. The films exhibit a local mobility maximum near a substrate temperature of 350 °C, beyond which a sharp increase in resistivity associated with voids and cracks owing to the onset of secondary grain growth leads to a dramatic decrease in electrical mobility. At the highest growth temperatures, however, the interconnection between grains improves and lower resistivity and higher mobility are re-established.

Preparation of InN by Means of AP-HCVD Using In Buffer Layers

2007 ◽  
Vol 1040 ◽  
Author(s):  
Hiroaki Yokoo ◽  
Naoki Wakiya ◽  
Naonori Sakamoto ◽  
Takato Nakamura ◽  
Hisao Suzuki
Keyword(s):  
Electrical Property ◽  
Surface Morphology ◽  
Buffer Layer ◽  
Atmospheric Pressure ◽  
Indium Nitride ◽  
Buffer Layers ◽  
Crystal Quality ◽  
X Ray Diffraction ◽  
X Ray ◽  
Quality Surface

AbstractWe have grown indium nitride (InN) films using In buffer layer on an a-plane sapphire substrate under atmospheric pressure by halide CVD (AP-HCVD). Growth was carried out by two steps: deposition In buffer layer at 900 °C and subsequent growth of InN layer at 650 °C. In order to compare, we also grown InN films on an a-plane sapphire. The InN films are investigated on crystal quality, surface morphology and electrical property using high-resolution X-ray diffraction (HR-XRD), X-ray pole figure, scanning electron microscope (SEM), Hall measurement. The results show that the crystal quality, surface morphology and electrical property of InN films are improved by using In buffer layer.

Influence of Reactive Oxygen Gas on Sputtered-Vanadium Oxide Films under Post-Annealing in Vacuum

2021 ◽  
Vol 872 ◽  
pp. 27-31
Author(s):  
S.Tipawan Khlayboonme ◽  
Thowladda Warawoot
Keyword(s):  
Vanadium Oxide ◽  
Gas Flow ◽  
Rf Magnetron Sputtering ◽  
X Ray Diffraction ◽  
Substrate Heating ◽  
Glass Substrates ◽  
Post Annealing ◽  
Different Temperatures ◽  
Vanadium Oxide Thin Films ◽  
Reactive Rf Magnetron Sputtering

Vanadium oxide thin films were deposited on glass substrates by O2 reactive-RF magnetron sputtering from a vanadium (V) target without substrate-heating. The percentages of O2 gas were 10%, 7.5%, 6.0%, 5.0% and 2.5%. The total gas flow rate (O2/Ar) was kept at 25 sccm. As-deposited films were experienced post-annealing process at different temperatures and times. The crystallinity and chemical bonding states of films were examined by X-ray diffraction and Raman spectroscopy. The condition in annealing to active crystallinity depended on an earlier composition of the films. As O2-gas percentages were 10% and 7.5%, after annealing, the as-deposited VxOy films were transformed into crystalline V2O5 films. With decreasing in O2 percentage to 5.0% and 2.5%, the films were transformed into V2O3 and VO films, respectively. The films deposited with 6.0% O2 were crystallized to VO2 with phase B after annealing with 500 °C 15 h. By applying a longer time to 30 h at the high temperature 500 °C in annealing, VO2 films revealed only phase M formation.

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