A Diamond Silicon Heterojunction Diode

1989 ◽  
Vol 162 ◽  
Author(s):  
C. L. Ellison ◽  
R. M. Cohen ◽  
J. T. Hoggins
Keyword(s):  
Microwave Plasma ◽  
Forward Bias ◽  
Chemical Vapor ◽  
Energy Band Diagram ◽  
Bias Current ◽  
Heterojunction Diode ◽  
Current Densities ◽  
Hot Probe ◽  
P Type ◽  
Probe Measurements

ABSTRACTThin diamond films were grown on low resistivity p-type Si wafers by microwave plasma assisted chemical vapor deposition. Using gold contacts, diode-like behavior was observed and forward bias current densities in excess of 5 A/cm2 were obtained. Reverse bias current densities were as low as 5 mA/cm2. Photocurrent was measured when photon energies larger than the Si bandgap were used to illuminate the heterojunction. The same photocurrent spectrum was measured even when the illumination spot was moved several centimeters away from the metal-diamond contact. Photovoltage. photocurrent and hot probe measurements have been used to infer the energy band diagram of the diamond-Si p-p heterojunction.

Fabrication of n-Type Nanocrystalline Diamond/3C-SiC/p-Si(001) Junctions

2011 ◽  
Vol 679-680 ◽  
pp. 524-527 ◽  
Author(s):  
Masaki Goto ◽  
Akira Koga ◽  
Kazuhiro Yamada ◽  
Yoshimine Kato ◽  
Kungen Teii
Keyword(s):  
Microwave Plasma ◽  
Chemical Vapor ◽  
Nanocrystalline Diamond ◽  
Moderate Pressure ◽  
Cross Sectional ◽  
Si Substrates ◽  
Current Voltage ◽  
In The Beginning ◽  
P Type ◽  
20 Nm

Nanocrystalline diamond (NCD)/3C-SiC layered films are deposited on Si substrates by using a moderate-pressure microwave plasma apparatus. The epitaxial 3C-SiC thin layer is grown on p-type Si(001) above 1200°C in 2%CH4/98%H2 by plasma-assisted carbonization and the n-type NCD overlayer is subsequently grown at 830°C in 1%CH4/30%N2/69%Ar by plasma-enhanced chemical vapor deposition (CVD). According to cross sectional TEM observations, the initial thickness of the 3C-SiC layer (~20 nm) is reduced to 10 nm or less in the beginning of the NCD growth due most likely to etching. A rectifying current-voltage characteristic is obtained for an n-type NCD/epitaxial 3C-SiC/p-type Si(001) junction in a diode configuration.

Electrical Properties of Hydrogen Terminated P-Type Diamond Film

2010 ◽  
Vol 663-665 ◽  
pp. 625-628
Author(s):  
Fu Yuan Xia ◽  
Lin Jun Wang ◽  
Jian Huang ◽  
Ke Tang ◽  
Ji Jun Zhang ◽  
...  
Keyword(s):  
Carrier Concentration ◽  
Microwave Plasma ◽  
Hydrogen Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
P Type ◽  
Effect Method

Undoped high quality polycrystalline diamond films were grown by the microwave plasma chemical vapor deposition (MPCVD) method. The effects of hydrogen plasma treatment and vacuum annealing process on the p-type behavior of diamond films were investigated by the Hall effect method. The sheet carrier concentration increased and the sheet resistivity decreased with the treating time of hydrogen plasma and a stable value was achieved finally. After annealing the samples in vacuum at temperature above 600 °C, the sheet carrier concentration dropped dramatically. The origin of this hydrogen terminated p-type conductive layers is also discussed.

Analysis of Leakage Currents through PLD Grown Ultrathin a-LaGdO3 Based High-k Metal Gate Devices

2013 ◽  
Vol 1561 ◽  
Author(s):  
Shojan P. Pavunny ◽  
Pankaj Misra ◽  
Reji Thomas ◽  
Ashok Kumar ◽  
James F. Scott ◽  
...  
Keyword(s):  
Leakage Current ◽  
Forward Bias ◽  
Bias Current ◽  
Schottky Emission ◽  
Silicon Substrates ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Trap Assisted Tunneling ◽  
Assisted Tunneling ◽  
P Type

ABSTRACTA detailed analysis of leakage current density-gate voltage measurements of gate stacks composed of PLD grown ultra thin films of LaGdO3 (LGO) on p-type silicon substrates with 8.4 Å EOT is presented. Temperature dependent leakage measurements revealed that forward bias current was dominated by Schottky emission over trap assisted tunneling below 1.2 MV/cm and quantum mechanical tunneling above this field. The physical origin of the reverse bias current was found to be a combination of Schottky emission and trap assisted tunneling. Low leakage current densities in the range from 2.3×10-3 to 29×10-3 A/cm2 were recorded for films with EOT from 1.8 to 0.8 nm, that are at least four or more orders below the ITRS specifications and its SiO2 competitors.

scholarly journals Performance of hydrogenated diamond MISFET using Zr-Si-N as the dielectric layer

MRS Advances ◽  
2017 ◽  
Vol 2 (52) ◽  
pp. 3037-3044
Author(s):  
Pengfei Zhang ◽  
Shufang Yan ◽  
Wei Wang ◽  
Shujia Zhang ◽  
Yanfeng Wang ◽  
...  
Keyword(s):  
Dielectric Layer ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Drain Current ◽  
Electron Beam Evaporation ◽  
Plasma Chemical Vapor Deposition ◽  
Gate Structure ◽  
Current Maximum ◽  
Effect Transistor ◽  
P Type

ABSTRACTTo better stabilize the hydrogen-terminated surface, a diamond based metal-insulator-semiconductor field-effect transistor with Zr-Si-N dielectric layer has been investigated. On the diamond epitaxial layer grown by microwave plasma chemical vapor deposition system, Pd films were patterned as the source and drain electrodes by photolithography and electron beam evaporation methods. Then, a Zr-Si-N dielectric layer and W metal film were fabricated as the gate structure by radio frequency magnetron sputtering technique. The device illustrates p-type depletion mode, in which the threshold voltage, maximum transconductance, drain current maximum, capacitance and dielectric constant were calculated to be 3.0V, 1.27mS/mm, -5.16 mA/mm, 0.275μF/cm2 and 7.8, respectively. The result suggest that Zr-Si-N dielectric layer is shown to have the ability to protect the two-dimensional hole gas.

VLSI Processing of Amorphous Silicon Alloy P-I-N Diodes For Active Matrix Applications

1986 ◽  
Vol 70 ◽  
Author(s):  
J. McGill ◽  
V. Cannella ◽  
Z. Yaniv ◽  
P. Day ◽  
M. Vijan
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Current Density ◽  
Reverse Bias ◽  
Unit Area ◽  
Forward Bias ◽  
Bias Current ◽  
Active Matrix ◽  
Silicon Alloy ◽  
Current Densities

ABSTRACTA number of new amorphous silicon alloy microelectronic devices, including LCD active matrix displays, linear image sensors, and thin film multilayer computer memories, have been developed in our company. These applications rely heavily on the quality of the intrinsic semiconductor as well as its ability to withstand the many processing steps used in a modern photolithographic process. In this paper, we present electrical data on amorphous silicon alloy p-i-n diodes after such a process. These devices have an active area of 20μm × 20μm defined using standard photolithographic techniques and etched using a dry etch process. These diodes are characterized by ideality factors (n) of 1.4 and extrapolated reverse saturation current densities of 1013A/cm2h. The diodes exhibit nearly 10 orders of magnitude rectification at ± 3V and the reverse bias current density remains below 10-8 A/cm2 for reverse bias voltages of -15V. In pulsed forward bias, these diodes can be operated at current densities greater than 300A/cm2. Thin film amorphous silicon diodes moreover have the advantage that varying the thickness of the intrinsic layer allows the optimization of parameters such as the capacitance per unit area, the reverse bias current density and the forward bias conductance per unit area. We find that these devices are fully compatible with state of the art VLSI processing techniques and are suitable for applications in integrated circuit structures, for example rectification devices in microelectronic arrays and isolation devices in display matrices.

scholarly journals Electrical Characterization of RF Reactive Sputtered p–Mg-InxGa1−xN/n–Si Hetero-Junction Diodes without Using Buffer Layer

Coatings ◽  
2019 ◽  
Vol 9 (11) ◽  
pp. 699 ◽  
Author(s):  
Thi Tran Anh Tuan ◽  
Dong-Hau Kuo ◽  
Phuong Thao Cao ◽  
Van Sau Nguyen ◽  
Quoc-Phong Pham ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Forward Bias ◽  
Electrical Characterization ◽  
Leakage Currents ◽  
Te Mode ◽  
Current Densities ◽  
P Type ◽  
Gan Film ◽  
Mg Doped

The modeling of p–InxGa1−xN/n–Si hetero junction diodes without using the buffer layer were investigated with the “top-top” electrode. The p–Mg-GaN and p–Mg-In0.05Ga0.95N were deposited directly on the n–Si (100) wafer by the RF reactive sputtering at 400 °C with single cermet targets. Al and Pt with the square size of 1 mm2 were used for electrodes of p–InxGa1−xN/n–Si diodes. Both devices had been designed to prove the p-type performance of 10% Mg-doped in GaN and InGaN films. By Hall measurement at the room temperature (RT), the holes concentration and mobility were determined to be Np = 3.45 × 1016 cm−3 and µ = 145 cm2/V·s for p–GaN film, Np = 2.53 × 1017 cm−3, and µ = 45 cm2/V·s for p–InGaN film. By the I–V measurement at RT, the leakage currents at −5 V and turn-on voltages were found to be 9.31 × 10−7 A and 2.4 V for p–GaN/n–Si and 3.38 × 10−6 A and 1.5 V for p–InGaN/n–Si diode. The current densities at the forward bias of 20 V were 0.421 and 0.814 A·cm−2 for p–GaN/n–Si and p–InGaN/n–Si devices. The electrical properties were measured at the temperature range of 25 to 150 °C. By calculating based on the TE mode, Cheungs’ and Norde methods, and other parameters of diodes were also determined and compared.

Fabrication of 4H-SiC/Nanocrystalline Diamond PN Junctions

2012 ◽  
Vol 717-720 ◽  
pp. 1009-1012
Author(s):  
Ryo Amano ◽  
Masaki Goto ◽  
Yoshimine Kato ◽  
Kungen Teii
Keyword(s):  
Microwave Plasma ◽  
Chemical Vapor ◽  
Carbon Matrix ◽  
Film Deposition ◽  
Nanocrystalline Diamond ◽  
Moderate Pressure ◽  
Rectification Ratio ◽  
X Ray Diffraction ◽  
Current Voltage ◽  
P Type

Nitrogen-incorporated, n-type nanocrystalline diamond (NCD) films are deposited on p-type Si(001) and 4H-SiC(0001) substrates by moderate-pressure, microwave plasma-enhanced chemical vapor deposition using a mixture of 1%CH4-30%N2-69%Ar. X-ray diffraction and visible Raman spectroscopy reveal that the structure of the NCD films is identical independent of the substrate materials, such that diamond nanoparticles with apparent crystal sizes of 5-8 nm are embedded in amorphoussp2carbon matrix. For p-Si/n-NCD heterojunctions in a diode configuration, the rectifying behavior in current-voltage curves depends upon the substrate temperature for film deposition, and the rectification ratio reaches a maximum of about 300 when the film is deposited at 830 °C. For p-4H-SiC/n-NCD heterojunctions, the rectification ratio increases greatly to about 10000 when the film is deposited at 830 °C due exclusively to suppression of the reverse leakage current.

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