Effect of Doping with Nitrogen and Boron on Cathodoluminescence of CVD-Diamond

1989 ◽  
Vol 162 ◽  
Author(s):  
Y. Yokota ◽  
H. Kawarada ◽  
A. Hiraki
Keyword(s):  
Electron Irradiation ◽  
Nitrogen Doping ◽  
Boron Doping ◽  
Cvd Diamond ◽  
Luminescent Center ◽  
Zero Phonon Line ◽  
Phonon Line ◽  
Nitrogen Doped ◽  
Boron Doped ◽  
Luminescent Centers

ABSTRACTWe have investigated cathodoluminescence (CL) of nitrogen- and boron-doped CVD diamonds compared with type Ib and undoped CVD diamonds. The CL spectrum of nitrogen-doped CVD diamond shows some luminescent centers, which are not observed in undoped one. Especially 2.15 eV (575 nm) and 1.67 eV (GRl) centers are prominent. CVD diamond doped with both nitrogen and boron shows a similar CL spectrum to boron-doped CVD diamond at lower concentration of nitrogen, and shows a spectrum composed of the centers obtained by nitrogen-doping and by boron-doping at higher concentration of nitrogen. Highenergy electron irradiation to nitrogen-doped CVD diamond produces an intense luminescent center having a zero-phonon line at 3.19 eV, and the following annealing make the emission of 2.15 eV center much more intense.

scholarly journals Effect of Nitrogen Doping on the Photoluminescence of Amorphous Silicon Oxycarbide Films

Micromachines ◽  
2019 ◽  
Vol 10 (10) ◽  
pp. 649 ◽  
Author(s):  
Jie Song ◽  
Rui Huang ◽  
Yi Zhang ◽  
Zewen Lin ◽  
Wenxing Zhang ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Nitrogen Doping ◽  
Silicon Oxycarbide ◽  
Chemical Bonds ◽  
X Ray ◽  
Nitrogen Doped ◽  
Orange Yellow ◽  
Luminescent Films ◽  
Decay Dynamic ◽  
Luminescent Centers

The effect of nitrogen doping on the photoluminescence (PL) of amorphous SiCxOy films was investigated. An increase in the content of nitrogen in the films from 1.07% to 25.6% resulted in red, orange-yellow, white, and blue switching PL. Luminescence decay measurements showed an ultrafast decay dynamic with a lifetime of ~1 ns for all the nitrogen-doped SiCxOy films. Nitrogen doping could also widen the bandgap of SiCxOy films. The microstructure and the elemental compositions of the films were studied by obtaining their Raman spectra and their X-ray photoelectron spectroscopy, respectively. The PL characteristics combined with an analysis of the chemical bonds configurations present in the films suggested that the switching PL was attributed to the change in defect luminescent centers resulting from the chemical bond reconstruction as a function of nitrogen doping. Nitrogen doping provides an alternative route for designing and fabricating tunable and efficient SiCxOy-based luminescent films for the development of Si-based optoelectronic devices.

scholarly journals Boron Doping of Microcrystalline and Nanocrystalline Diamond Films: Where is the Boron Going?

2007 ◽  
Vol 1039 ◽  
Author(s):  
Paul William May ◽  
William J Ludlow ◽  
Matthew Hannaway ◽  
James A Smith ◽  
Keith N Rosser ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Grain Boundaries ◽  
Raman Spectra ◽  
Diamond Films ◽  
Boron Doping ◽  
Cvd Diamond ◽  
High Concentration ◽  
Metallic Conductivity ◽  
Boron Doped ◽  
Impurities And Defects

AbstractWe present data showing how the electrical conductivity and Raman spectra of boron doped ‘cauliflower’-type nanocrystalline (c-NCD) CVD diamond films vary as a function of B content. The conductivity is roughly linear as a function of B content between an onset threshold of ∼5×1020 cm−3 up to ∼6×1021 cm−3, with the higher concentrations giving near metallic conductivity values. The onset threshold may be due to compensating donors due to the large number of impurities and defects in these films. The position of the Lorentzian contribution to the 500 cm−1 Raman feature was used to estimate the B content and compared to the value measured using SIMS. We found that the Raman method overestimated the concentration of B by a factor of ∼5 for these c-NCD films. The shortfall may be explained if only a small fraction of the B found in the small-grained films is being incorporated into substitutional sites. We conclude that in diamond films with a high concentration of grain boundaries, the majority of the B (80% in some cases) must be present at or in the grain boundaries.

Raman Scattering Study of Boron Doped Diamond Synthesized at High Pressure

1992 ◽  
Vol 283 ◽  
Author(s):  
Hiromu Shiomi ◽  
Dimitry Kirillov ◽  
Stig B. Hagstrom
Keyword(s):  
High Pressure ◽  
Raman Scattering ◽  
Boron Doping ◽  
Electronic Transitions ◽  
Boron Doped Diamond ◽  
Phonon Line ◽  
Boron Doped ◽  
Scattering Study ◽  
Boron Acceptor

ABSTRACTBoron doped diamond synthesized at high pressure was studied using Raman scattering. Shift and broadening of the diamond phonon line was observed and attributed to disorder produced by boron doping. Electronic transitions within boron acceptor states and Fano-type interference between phonons and the electronic continuum have also been observed in the spectra.

Electronic Properties of Nitrogen- and Boron-Doped Amorphous Carbon (a-C:N and a-C:B) Films from Palmyra Sugar

2020 ◽  
Vol 860 ◽  
pp. 185-189
Author(s):  
Anna Zakiyatul Laila ◽  
Khoirotun Nadiyyah ◽  
Irma Septi Ardiani ◽  
Budhi Priyanto ◽  
Darminto
Keyword(s):  
Electrical Conductivity ◽  
Boric Acid ◽  
Band Gap ◽  
Amorphous Carbon ◽  
Nitrogen Doping ◽  
Boron Doping ◽  
Glass Substrates ◽  
Boron Doped ◽  
Ito Glass ◽  
Unique Material

Amorphous carbon (a-C) film is a unique material that attracts the attention of scientists to be investigated. Nitrogen- and boron- doped amorphous carbon (a-C:N and a-C:B) have been deposited on ITO glass substrates by using nanospray method. Palmyra sugar is heated at temperature 250o C for 2.5 hours to obtain a-C. Boric acid (H3BO3) and amonium hidroxide (NH4OH) are used as the sources of boron doping and nitrogen doping. a-C:N and a-C:B are made by the variations of mole ratio for doping and amorphous carbon, that are 1:15 and 1:20. Then, these samples are dissolved into mixed dymethyl sulfoxide (DMSO) and aquades. The exfoliation process of samples has been done by applying ultrasonic cleaner for 2 hours and also centrifugated at 4000 rpm for 45 minutes. Electrical conductivity and band gap are measured by using four point probe and UV Vis. The results show that electrical conductivity increases but band gap decreases than pure a-C. Furthermore, the larger mole ratio of a:C-N and a-C:B also increases conductivity and decreases band gap, resulting between 5.5×10-1S/cm – 6.1×10-1 S/cm and 1.43 eV – 1.71 eV.

Enhanced performance of Mo2P monolayer as lithium-ion battery anode materials by carbon and nitrogen doping: a first principles study

2021 ◽  
Vol 23 (6) ◽  
pp. 4030-4038
Author(s):  
Xinghui Liu ◽  
Shiru Lin ◽  
Jian Gao ◽  
Hu Shi ◽  
Seong-Gon Kim ◽  
...  
Keyword(s):  
Lithium Ion Battery ◽  
First Principles ◽  
Energy Barrier ◽  
Anode Materials ◽  
Nitrogen Doping ◽  
High Capacity ◽  
Lithium Ion ◽  
Carbon And Nitrogen ◽  
Nitrogen Doped ◽  
Battery Anode

Simple carbon (nitrogen) doped Mo2P as promoting lithium-ion battery anode materials with extremely low energy barrier and high capacity.

Boron-doped cobalt oxide thin films and its electrochemical properties

2016 ◽  
Vol 30 (27) ◽  
pp. 1650343 ◽  
Author(s):  
S. Kerli
Keyword(s):  
Thin Films ◽  
Cobalt Oxide ◽  
Performance Test ◽  
Spray Deposition ◽  
Boron Doping ◽  
Optical Measurements ◽  
Oxide Thin Films ◽  
Boron Doped ◽  
Electrochemical Supercapacitor ◽  
Supercapacitor Performance

The cobalt oxide and boron-doped cobalt oxide thin films were produced by spray deposition method. All films were obtained onto glass and fluorine-doped tin oxide (FTO) substrates at 400[Formula: see text]C and annealed at 550[Formula: see text]C. We present detailed analysis of the morphological and optical properties of films. XRD results show that boron doping disrupts the structure of the films. Morphologies of the films were investigated by using a scanning electron microscopy (SEM). Optical measurements indicate that the band gap energies of the films change with boron concentrations. The electrochemical supercapacitor performance test has been studied in aqueous 6 M KOH electrolyte and with scan rate of 5 mV/s. Measurements show that the largest capacitance is obtained for 3% boron-doped cobalt oxide film.

scholarly journals Thick heavily boron doped CVD diamond films homoepitaxially grown on (111)-oriented substrates

2017 ◽  
Vol 79 ◽  
pp. 108-111 ◽  
Author(s):  
A. Boussadi ◽  
A. Tallaire ◽  
O. Brinza ◽  
M.A. Pinault-Thaury ◽  
J. Achard
Keyword(s):  
Diamond Films ◽  
Cvd Diamond ◽  
Boron Doped

Fabrication of nitrogen-doped hierarchical porous carbons from Sargassum as advanced electrode materials for supercapacitors

2021 ◽  
Author(s):  
Feiqiang Guo ◽  
Yinbo Zhan ◽  
Xiaopeng Jia ◽  
Huiming Zhou ◽  
Shuang Liang ◽  
...  
Keyword(s):  
High Performance ◽  
Nitrogen Doping ◽  
Electrode Materials ◽  
Three Dimensional ◽  
Koh Activation ◽  
Porous Carbons ◽  
Nitrogen Doped ◽  
Novel Approach ◽  
Hierarchical Porous ◽  
Hierarchical Porous Carbons

Using Sargassum as the precursor, a novel approach was developed to synthesize three-dimensional porous carbons as high-performance electrode materials for supercapacitors via KOH activation and subsequent nitrogen-doping employing melamine as...

Electron momentum density of boron-doped carbon nano-onions studied by electron energy-loss spectroscopy

2021 ◽  
Author(s):  
Zhenbao Feng ◽  
Wei Ding ◽  
Yangming Lin ◽  
Feng Guo ◽  
Xiaoyan Zhang ◽  
...  
Keyword(s):  
Energy Loss ◽  
Electron Energy ◽  
Boron Doping ◽  
Momentum Density ◽  
Doping Content ◽  
Electron Momentum ◽  
Electron Momentum Density ◽  
Boron Doped ◽  
Electron Energy Loss ◽  
Electron Energy Loss Spectra

Valence Compton profiles (CPs) (electron momentum density projections) of B-doped carbon nano-onions (CNOs) as a function of the boron doping content were obtained by recording electron energy-loss spectra at large...

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