Regrowth of Damaged Layers in Diamond Produced by Ion Implantation

1989 ◽  
Vol 162 ◽  
Author(s):  
G. S. Sandhu ◽  
B. Liu ◽  
N. R. Parikh ◽  
J. D. Hunn ◽  
M. L. Swanson ◽  
...  
Keyword(s):  
Optical Absorption ◽  
Electric Field ◽  
Ion Implantation ◽  
Electric Field Gradient ◽  
Perturbed Angular Correlation ◽  
Complete Recovery ◽  
High Energy ◽  
Optical Measurements ◽  
Carbon Ions ◽  
Furnace Annealing

ABSTRACTWe have used RBS/Channeling, perturbed angular correlation (PAC) and optical absorption to study the regrowth of disordered layers in diamond produced by implantation with carbon, or with carbon plus boron or indium ions. For C or C plus B implantation doses of 2 ×1015 cm−2 or less, complete recovery of channeling damage occurred after RTA at 1100°C or furnace annealing at 900°C. Optical measurements on samples implanted with high energy carbon ions show better recovery compared to the shallower implantations. PAC results showed that co-implantation with C and In caused a considerable fraction (∼15%) of the In-atoms to occupy well-defined lattice sites characterized by an electric field gradient having its major component along <111>, and a frequency of 116 MHz.

Geometrical Structure of Lattice Defect-Impurity Configurations Determined by TDPAC

1980 ◽  
Vol 3 ◽  
Author(s):  
M. Deicher ◽  
O. Echt ◽  
E. Recknagel ◽  
Th. Wichert
Keyword(s):  
Electric Field ◽  
Electric Field Gradient ◽  
Geometrical Structure ◽  
Perturbed Angular Correlation ◽  
Lattice Defect ◽  
Electric Field Gradient Tensor ◽  
Correlation Technique ◽  
Gradient Tensor ◽  
Defect Clusters ◽  
Microscopic Interpretation

ABSTRACTThe perturbed angular correlation technique (TDPAC) was applied to determine the orientation of the electric field gradient tensor induced by lattice defects at the probe 1l1In. The experimental results obtained for self-interstitials, vacancies and defect clusters in Cu, Ag and Au are shown and their microscopic interpretation is discussed.

Recrystallisation of Preamorphized Silicon Investigated by RBS and PAC

1996 ◽  
Vol 420 ◽  
Author(s):  
G. Rohrlack ◽  
K. Freitag ◽  
R. Vianden ◽  
R. Gwilliam ◽  
B. J. Sealy ◽  
...  
Keyword(s):  
Experimental Data ◽  
Electric Field ◽  
Electric Field Gradient ◽  
Field Gradient ◽  
Radioactive Isotope ◽  
Perturbed Angular Correlation ◽  
Lattice Structure ◽  
Amorphous Layer ◽  
Microscopic Scale ◽  
Pac Technique

AbstractThe technique of preamorphization is a well-known method to avoid channeling tails of implanted dopants when fabricating devices. This is achieved by implanting a nondopant atom to produce the amorphous layer. We studied the recrystallisation of silicon preamorphized by Si, Ge and Sn implants. The recrystallisation was investigated by RBS and the y-y perturbed angular correlation (PAC) technique. RBS provides information about the thickness and the perfection of the recovered layer. Additional experimental data are supplied by the PAC technique, which used the postimplanted radioactive isotope 111Ina s a probe atom. The recovery of the lattice structure in the vicinity of the probe atoms is monitored on a microscopic scale via the electric field gradient produced at the site of the In nucleus by the surrounding lattice defects. The results are discussed and compared to the RBS data.

A New Application of Rbs-Pixe with High Energy Microbeam

1986 ◽  
Vol 69 ◽  
Author(s):  
B. Raicu ◽  
H. Bakhru ◽  
S. Fesseha ◽  
W. M. Gibson
Keyword(s):  
Ion Implantation ◽  
Transport System ◽  
High Energy ◽  
Silicon Wafers ◽  
High Dose ◽  
Furnace Annealing ◽  
Pixe Analysis ◽  
X Ray ◽  
Technological Factors ◽  
Beam Sputtering

AbstractA beam of 2 MeV He+ ions with a diameter of 2 microns was used to perform Rutherford backscattering (RBS) and particle induced x-ray emission (PIXE) analysis on large residual defects formed by high dose arsenic (As) ion implantation and furnace annealing. Research results concerning contamination in implanted silicon wafers generated by primary beam sputtering, inadequate wafer transport system, and other technological factors are presented.

High-Energy Ion-Implantation of a Moderately Deep Acceptor Hg Into Liquid Encapsulated Czochralski Grown GaAs : Formation of New Shallow Emission Bands

1995 ◽  
Vol 396 ◽  
Author(s):  
K. Harada ◽  
Y. Makita ◽  
H. Shibata ◽  
B. Lo ◽  
A. C. Beye ◽  
...  
Keyword(s):  
Heat Treatment ◽  
Activation Energy ◽  
Optical Properties ◽  
Ion Implantation ◽  
Conduction Band ◽  
High Energy ◽  
Acceptor Impurity ◽  
Furnace Annealing ◽  
Deep Acceptor ◽  
Lec Gaas

AbstractHg (mercury) in GaAs is known to be a moderately deep acceptor impurity, having a 52 meV activation energy. Optical properties of Hg acceptors in GaAs were systematically investigated as a function of Hg concentration, [Hg]. Samples were prepared by high-energy ion-implantation of Hg+ into GaAs grown by the liquid encapsulated Czochralski (LEC) method. Heat treatment was made by furnace annealing and rapid thermal annealing. Photoluminescence measurements at 2K revealed that the Hg-related so-called “g” line is formed in addition to the well-defined conduction band-to-Hg acceptor transition, (e, Hg). Additionally, three shallow emissions are formed for net hole concentrations INA-NDI greater than 2×1017cm−3 . This is the first demonstration that even Hg in GaAs makes multiple shallow emissions due to acceptor-acceptor pairs and LEC GaAs can be used for the investigations of these emissions.

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