Deposition and Characterization of Carbon Films Produced by Nitrogen/Argon Mixture RF Sputtering
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ABSTRACTThin carbon films were prepared by RF diode sputtering of a graphite target in a mixed nitrogen/argon plasma. A series of carbon films were deposited as a function of nitrogen partial pressure. We have observed a systematic variation of the properties of the carbon films with an increase of the nitrogen partial pressure. AES, XPS and energy gap studies showed that nitrogen will enhance the diamond sp3 bonding. Consistent with this the optical energy gap of our C:N films shows an increase from 1.1 eV to 1.4 eV using, respectively, 25 to 100 % nitrogen plasma. The mechanical properties also are shown to be enhanced for certain applications.
1990 ◽
Vol 5
(11)
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pp. 2490-2496
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1996 ◽
Vol 11
(9)
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pp. 2269-2273
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1973 ◽
Vol 31
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pp. 266-267
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1984 ◽
Vol 42
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pp. 268-269
1975 ◽
Vol 33
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pp. 556-557
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