Energy Level Spectra of Transition Metal Ions In Diluted Magnetic Semiconductors

1989 ◽  
Vol 161 ◽  
Author(s):  
Murielle Villeret ◽  
S. Rodriguez ◽  
E. Kartheuser

ABSTRACTWe present a study of the low lying energy levels of Fe2+, Co2+, Ni2+ and Cu2+ in diluted magnetic semiconductors such as Cd1−xCoxTe and Cd1−xCoxSe and their counterparts. In the first of these compounds the magnetic ion sits on a site of symmetry Td while in the second the symmetry is trigonal (C3v). We develop a formulation that permits a continuous variation from Td to C3v symmetry. Comparison with experimental data in Cd1−xCoxSe shows that the C3v distortion amounts to about 10% of the crystal potential at the Co2+ site. Our study of the energy spectra of Fe2+ in Td and C3v crystal potentials reveals that, even in the cubic field, the levels exhibit an anisotropy which manifests it- self in an anisotropy of the magnetization, , in the regime in which is not a linear function of the magnetic field . The study includes all the levels in the lowest terms of the (3d)n (n=6,7,8,9) configurations. The calculations are carried out to second order in the spin-orbit interaction and in for the lowest orbital states and to first order in for the excited states. The g-factors of all the levels are obtained including their anisotropy for the Co2+ and Cu2+Γ8states.

1986 ◽  
Vol 89 ◽  
Author(s):  
Jacek Kossut ◽  
Jacek K. Furdyna

AbstractThe presence of transition metal ions (typically Mn2+) in diluted magnetic semiconductors (DMS) results in a strong spin-spin coupling between localized magnetic moments and band electrons. This leads to considerable modifications of the semiconductor band structure in the presence of strong magnetic fields, e.g., to large spin-dependent shifts of the electronic states at the band edge. This feature is of particular interest in the context of quantum wells involving DMS. Starting with the original idea of a “spin-superlattice”, we concentrate on various opportunities which arise due to the tunability of the depth of the quantum wells by the magnetic field and/or temperature associated with the aforementioned spindependent effects. Thus, we discuss boil-off and freeze-out of electrons to and from quantum wells, selective spin tunneling across the barriers, tunable infrared emitters, enhancement of electronic g-factors in shallow non-magnetic wells surrounded by DMS barriers, the possibility of transition from a type-1 to a type-il superlattice induced by the magnetic field, and quantum oscillations anomalies in DMS quantum wells.


1993 ◽  
Vol 47 (3) ◽  
pp. 1228-1236 ◽  
Author(s):  
Murielle Villeret ◽  
Sergio Rodriguez ◽  
E. Kartheuser

2018 ◽  
Vol 185 ◽  
pp. 06001
Author(s):  
Vasilii S. Zakhvalinskii ◽  
Tatyana B. Nikulicheva ◽  
Erkki Lähderanta ◽  
Aleksey V. Kochura ◽  
Ekaterina A. Nikitovskaia ◽  
...  

Single crystals of a diluted magnetic semiconductor (Cd1-x-yZnxMny)3As2 (CZMA) (x + y = 0.4;y=0.04 and 0.08) obtained by Bridgman method were used. The Shubnikov-de Haas (SdH) effect was observed within studying of the dependence of the resistivity on the magnetic field in CZMA solid solutions. The values of the cyclotron mass mc, Hall and Shubnikov carrier concentrations were calculated.


1989 ◽  
Vol 161 ◽  
Author(s):  
N. Samarth ◽  
J. K. Furdyna

ABSTRACTMuch of the work in diluted magnetic semiconductors (DMS) in past years has focused on the alloys such as Cd1−xMnxTe. Recently, there has been an increasing accent on DMS alloys containing the transition metal ions Fe2+ and Co2+. We review here the properties of these new materials and compare them with the alloys. We also examine the novel opportunities afforded by the molecular beam epitaxy of epilayers and heterostructures containing the “metastable” zinc-blende phase of Cd1−xMnxSe.


2009 ◽  
Vol 152-153 ◽  
pp. 295-298 ◽  
Author(s):  
E.P. Skipetrov ◽  
M.G. Mikheev ◽  
N.A. Pichugin ◽  
B.B. Kovalev ◽  
L.A. Skipetrova ◽  
...  

Magnetic and galvanomagnetic properties of Pb1-x-yGexCryTe (x=0.02-0.20, y=0.01-0.08) solid solutions have been investigated. It was found that the magnetic susceptibility of these alloys contains two contributions: a paramagnetic Curie-Weiss share (T<50 K) due to the paramagnetism of Cr3+ ions and a high temperature ferromagnetic share (T<300 K). Dependence of the concentration of paramagnetic centers on the composition of the matrix was obtained. The magnetic field dependences of the Hall coefficient in the vicinity of the metal-insulator transition were measured and the main parameters of charge carriers in terms of the two-band conduction model were estimated. The experimental results are discussed in the framework of the electronic structure model, assuming varying electrical and magnetic activities of Cr ions as function of germanium content in the alloys.


2005 ◽  
Vol 19 (01n03) ◽  
pp. 5-7
Author(s):  
R. N. BHATT ◽  
CHENGGANG ZHOU ◽  
MALCOLM KENNETT ◽  
MONA BERCIU ◽  
XIN WAN

We examine the effects of positional disorder of the magnetic ion in III-V Diluted Magnetic Semiconductors such as ( Ga , Mn ) As at low carrier densities on the nature of the low-temperature ordered magnetic state, using numerical mean field and Monte Carlo methods. We find that positional disorder leads to a highly inhomogeneous ferromagnetic order in the low carrier density limit, with unusual thermodynamic and magnetic behavior. Spin-orbit coupling presented in the valence band leads to frustration in the hole-doped system, but does not significantly affect the low temperature magnetization.


2009 ◽  
Vol 152-153 ◽  
pp. 291-294 ◽  
Author(s):  
E.P. Skipetrov ◽  
E.A. Zvereva ◽  
A.N. Golovanov ◽  
N.A. Pichugin ◽  
A.E. Primenko ◽  
...  

The structural and magnetic properties as well as the electron paramagnetic resonance in Pb1-xVxTe (х0.7 at.%) solid solutions have been investigated. It was found that the magnetic field and the temperature dependences of magnetization have a paramagnetic character, connected obviously with the paramagnetic contribution of vanadium impurity isolated ions. Electron paramagnetic resonance spectra were measured and the temperature dependence of the g-factor in the temperature range 85-200 K was obtained.


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