scholarly journals Trend reversal in the magnetic-field dependence of exciton spin-transfer rates in diluted magnetic semiconductors due to non-Markovian dynamics

2018 ◽  
Vol 97 (4) ◽  
Author(s):  
F. Ungar ◽  
M. Cygorek ◽  
V. M. Axt
2018 ◽  
Vol 185 ◽  
pp. 06001
Author(s):  
Vasilii S. Zakhvalinskii ◽  
Tatyana B. Nikulicheva ◽  
Erkki Lähderanta ◽  
Aleksey V. Kochura ◽  
Ekaterina A. Nikitovskaia ◽  
...  

Single crystals of a diluted magnetic semiconductor (Cd1-x-yZnxMny)3As2 (CZMA) (x + y = 0.4;y=0.04 and 0.08) obtained by Bridgman method were used. The Shubnikov-de Haas (SdH) effect was observed within studying of the dependence of the resistivity on the magnetic field in CZMA solid solutions. The values of the cyclotron mass mc, Hall and Shubnikov carrier concentrations were calculated.


1986 ◽  
Vol 89 ◽  
Author(s):  
Jacek Kossut ◽  
Jacek K. Furdyna

AbstractThe presence of transition metal ions (typically Mn2+) in diluted magnetic semiconductors (DMS) results in a strong spin-spin coupling between localized magnetic moments and band electrons. This leads to considerable modifications of the semiconductor band structure in the presence of strong magnetic fields, e.g., to large spin-dependent shifts of the electronic states at the band edge. This feature is of particular interest in the context of quantum wells involving DMS. Starting with the original idea of a “spin-superlattice”, we concentrate on various opportunities which arise due to the tunability of the depth of the quantum wells by the magnetic field and/or temperature associated with the aforementioned spindependent effects. Thus, we discuss boil-off and freeze-out of electrons to and from quantum wells, selective spin tunneling across the barriers, tunable infrared emitters, enhancement of electronic g-factors in shallow non-magnetic wells surrounded by DMS barriers, the possibility of transition from a type-1 to a type-il superlattice induced by the magnetic field, and quantum oscillations anomalies in DMS quantum wells.


1995 ◽  
Vol 211 (1-4) ◽  
pp. 388-391 ◽  
Author(s):  
J.L. Martin ◽  
M. Goiran ◽  
Z. Golacki ◽  
J. Leotin ◽  
S. Askenazy

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