Properties of HgTe:ZnTe Strained Layer Superlattices Grown by MOVPE

1989 ◽  
Vol 161 ◽  
Author(s):  
J.T. Mullins ◽  
P.A. Clifton ◽  
P.D. Brown ◽  
D.O. Hall ◽  
A.W. Brinkman
Keyword(s):  
Electronic Structure ◽  
Theoretical Calculations ◽  
Biaxial Compression ◽  
Strained Layer ◽  
Strained Layer Superlattices

ABSTRACTHgTe:ZnTe superlattices have been grown by thermal MOVPE at temperatures down to 325°C. At this temperature, interdiffusion is sufficiently low to make superlattice periods as low as 45A practicable. The results of theoretical calculations of the electronic structure of these materials are also reported. These show that the electronic structure may be significantly different to that found for the HgTe:CdTe system due to the large biaxial compression present in the HgTe well layers.

Electronic structure of cadmium-telluride–zinc-telluride strained-layer superlattices under pressure

1989 ◽  
Vol 40 (8) ◽  
pp. 5522-5528 ◽  
Author(s):  
B. Gil ◽  
D. J. Dunstan ◽  
J. Calatayud ◽  
H. Mathieu ◽  
J. P. Faurie
Keyword(s):  
Electronic Structure ◽  
Cadmium Telluride ◽  
Zinc Telluride ◽  
Strained Layer ◽  
Strained Layer Superlattices

Electronic Structure and Optical Properties of Strained Layer Superlattices

1991 ◽  
pp. 509-521
Author(s):  
G. Duggan ◽  
K. J. Moore ◽  
K. Woodbridge ◽  
C. Roberts ◽  
N. J. Pulsford ◽  
...  
Keyword(s):  
Optical Properties ◽  
Electronic Structure ◽  
Strained Layer ◽  
Strained Layer Superlattices

Electronic structure of strained layer superlattices from tight binding theory

1988 ◽  
Vol 4 (4-5) ◽  
pp. 511-513 ◽  
Author(s):  
H. Rücker ◽  
F. Bechstedt ◽  
R. Enderlein ◽  
D. Hennig ◽  
S. Wilke
Keyword(s):  
Electronic Structure ◽  
Tight Binding ◽  
Binding Theory ◽  
Strained Layer ◽  
Strained Layer Superlattices

Electronic structure of Ge/Si monolayer strained-layer superlattices

1989 ◽  
Vol 39 (6) ◽  
pp. 3741-3757 ◽  
Author(s):  
T. P. Pearsall ◽  
J. Bevk ◽  
J. C. Bean ◽  
J. Bonar ◽  
J. P. Mannaerts ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Strained Layer ◽  
Strained Layer Superlattices

Luminescence Properties of InxGa1-xAs-GaAs Strained-Layer Superlattices

1984 ◽  
Vol 37 ◽  
Author(s):  
N. G. Anderson ◽  
W. D. Laidig ◽  
G. Lee ◽  
Y. Lo ◽  
M. Ozturk
Keyword(s):  
Layer Thickness ◽  
Molecular Beam ◽  
Heavy Hole ◽  
Gaas Layer ◽  
Biaxial Compression ◽  
Biaxial Strain ◽  
Strained Layer ◽  
Compression Data ◽  
Strained Layer Superlattices ◽  
Hole Transition

AbstractThe low-temperature (20K) photoluminescence of InxGa1-xAs and InxGal-xAs - GaAs strained-layer superlattices (SLS's) grown by molecular beam epitaxy (MBE) is investigated. Data are presented for thick (bulk) epitaxial layers grown directly on GaAs and for relatively-thin (˜600Å) InxGa1-xAs layers under biaxial compression. Data are also presented for two series of SLS's. In the two series of SLS's, the InxGa1-xAs layer thickness (Lz) is held constant while only the GaAs layer thickness (LB) is varied. The photoluminescence (PL) spectra of the crystals are useful in analyzing the effects of biaxial strain, carrier confinement, and barrier layer thicknesses in SLS's. Results are compared with calculations based upon a modified Kronig-Penney model which incorporates the appropriate deformation potentials for SLS analysis. This type of analysis, in agreement with experimental data, suggests that the electron-to-light-hole transition can be lower in energy than the electron-to-heavy-hole transition in SLS's, depending upon layer thickness and crystal composition.

Optical etalon effects and electronic structure in silicon-germanium 4 monolayer: 4 monolayer strained layer superlattices

1991 ◽  
Vol 6 (1) ◽  
pp. 18-26 ◽  
Author(s):  
A C Churchill ◽  
P C Klipstein ◽  
C J Gibbings ◽  
M A Gell ◽  
M E Jones ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Silicon Germanium ◽  
Strained Layer ◽  
Strained Layer Superlattices
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