Recent Progress in The Omvpe Growth of HgCdTe

1989 ◽  
Vol 161 ◽  
Author(s):  
Sorab K. Ghandhi

ABSTRACTThe last two years has seen rapid development in the growth of mercury cadmium telluride material for use in far infrared detectors. This paper will briefly review the progress before this period, and will focus on recent developments in these materials.The emphasis will be on the direct alloy growth of HgCdTe material by organometallic vapor phase epitaxy (OMVPE).

1987 ◽  
Vol 102 ◽  
Author(s):  
S.K. Ghandhi

ABSTRACTThis paper reviews the requirements for mercury cadmium telluride material which is suitable for far infrared detectors. This is followed by substrate and reactor considerations, leading to its direct alloy growth by organometallic vapor phase epitaxy.It is shown that HgCdTe can now be grown with electrical properties and areal compositional uniformity that are suitable for focal plane arrays, operating in the 10.6 Am range.


1999 ◽  
Author(s):  
A. G. Unil Perera ◽  
W. Z. Shen ◽  
Hui C. Liu ◽  
Margaret Buchanan ◽  
William J. Schaff

1999 ◽  
Vol 75 (2) ◽  
pp. 304-304 ◽  
Author(s):  
A. G. U. Perera ◽  
W. Z. Shen ◽  
M. Ershov ◽  
H. C. Liu ◽  
M. Buchanan ◽  
...  

1988 ◽  
Vol 52 (19) ◽  
pp. 1602-1604 ◽  
Author(s):  
Dan M. Watson ◽  
James E. Huffman

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