The Organometallic Epitaxy of Hgcdte for Infrared Detector Applications

1987 ◽  
Vol 102 ◽  
Author(s):  
S.K. Ghandhi
Keyword(s):  
Focal Plane ◽  
Infrared Detectors ◽  
Mercury Cadmium Telluride ◽  
Infrared Detector ◽  
Far Infrared ◽  
Focal Plane Arrays ◽  
Organometallic Vapor Phase Epitaxy ◽  
Compositional Uniformity ◽  
Far Infrared Detectors ◽  
Direct Alloy

ABSTRACTThis paper reviews the requirements for mercury cadmium telluride material which is suitable for far infrared detectors. This is followed by substrate and reactor considerations, leading to its direct alloy growth by organometallic vapor phase epitaxy.It is shown that HgCdTe can now be grown with electrical properties and areal compositional uniformity that are suitable for focal plane arrays, operating in the 10.6 Am range.

Recent Progress in The Omvpe Growth of HgCdTe

1989 ◽  
Vol 161 ◽  
Author(s):  
Sorab K. Ghandhi
Keyword(s):  
Vapor Phase ◽  
Infrared Detectors ◽  
Mercury Cadmium Telluride ◽  
Recent Progress ◽  
Rapid Development ◽  
Far Infrared ◽  
Organometallic Vapor Phase Epitaxy ◽  
Far Infrared Detectors ◽  
Recent Developments ◽  
Direct Alloy

ABSTRACTThe last two years has seen rapid development in the growth of mercury cadmium telluride material for use in far infrared detectors. This paper will briefly review the progress before this period, and will focus on recent developments in these materials.The emphasis will be on the direct alloy growth of HgCdTe material by organometallic vapor phase epitaxy (OMVPE).

scholarly journals InAsSb-Based Infrared Photodetectors: Thirty Years Later On

Sensors ◽  
2020 ◽  
Vol 20 (24) ◽  
pp. 7047
Author(s):  
Antoni Rogalski ◽  
Piotr Martyniuk ◽  
Malgorzata Kopytko ◽  
Pawel Madejczyk ◽  
Sanjay Krishna
Keyword(s):  
Focal Plane ◽  
Infrared Detectors ◽  
Lower Cost ◽  
Review Paper ◽  
Infrared Detector ◽  
Focal Plane Arrays ◽  
Large Area ◽  
Technological Advances ◽  
New Ideas ◽  
Growth Methods

In 1989, one author of this paper (A.R.) published the very first review paper on InAsSb infrared detectors. During the last thirty years, many scientific breakthroughs and technological advances for InAsSb-based photodetectors have been made. Progress in advanced epitaxial methods contributed considerably to the InAsSb improvement. Current efforts are directed towards the photodetector’s cut-off wavelength extension beyond lattice-available and lattice-strained binary substrates. It is suspected that further improvement of metamorphic buffers for epitaxial layers will lead to lower-cost InAsSb-based focal plane arrays on large-area alternative substrates like GaAs and silicon. Most photodetector reports in the last decade are devoted to the heterostructure and barrier architectures operating in high operating temperature conditions. In the paper, at first InAsSb growth methods are briefly described. Next, the fundamental material properties are reviewed, stressing electrical and optical aspects limiting the photodetector performance. The last part of the paper highlights new ideas in design of InAsSb-based bulk and superlattice infrared detectors and focal plane arrays. Their performance is compared with the state-of-the-art infrared detector technologies.

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