Anisotropic Transport in InGaAs/GaAs Heterostructures Grown by Movpe
Keyword(s):
AbstractAnisotropic electron transport has been observed in InxGa1-xAs/GaAs heterostructures grown by MOVPE on (001) and intentionally misoriented GaAs substrates. The low field electron mobilities in two perpendicular directions are found to be higher in the [110] direction than in the [110] direction. The ratio of µ[110]/µ[110] derived from Hall measurements is related to the degree of substrate misorientation as well as epilayer composition. Finally, the photoluminescence spectra are polarized along orthogonal <110> directions. These anisotropic properties are directly related to the anisotropy of [110] and [110] dislocations due to lattice mismatch between the substrates and the layers.
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