Anisotropic Transport in InGaAs/GaAs Heterostructures Grown by Movpe

1989 ◽  
Vol 160 ◽  
Author(s):  
Qing Sun ◽  
D. Morris ◽  
C. Lacelle ◽  
A.P. Roth

AbstractAnisotropic electron transport has been observed in InxGa1-xAs/GaAs heterostructures grown by MOVPE on (001) and intentionally misoriented GaAs substrates. The low field electron mobilities in two perpendicular directions are found to be higher in the [110] direction than in the [110] direction. The ratio of µ[110]/µ[110] derived from Hall measurements is related to the degree of substrate misorientation as well as epilayer composition. Finally, the photoluminescence spectra are polarized along orthogonal <110> directions. These anisotropic properties are directly related to the anisotropy of [110] and [110] dislocations due to lattice mismatch between the substrates and the layers.

2009 ◽  
Vol 94 (2) ◽  
pp. 022102 ◽  
Author(s):  
V. M. Polyakov ◽  
F. Schwierz ◽  
F. Fuchs ◽  
J. Furthmüller ◽  
F. Bechstedt

2016 ◽  
Vol 213 (11) ◽  
pp. 2916-2920 ◽  
Author(s):  
Piotr Borowik ◽  
Jean-Luc Thobel ◽  
Leszek Adamowicz

1988 ◽  
Vol 64 (10) ◽  
pp. 4993-4996 ◽  
Author(s):  
Choon Tae Choi ◽  
Hyung Jae Lee

2021 ◽  
Vol 118 (3) ◽  
pp. 032101
Author(s):  
Ankit Sharma ◽  
Uttam Singisetti

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