Low‐field electron transport at room temperature in Ga1−xAlxAs alloys

1988 ◽  
Vol 64 (10) ◽  
pp. 4993-4996 ◽  
Author(s):  
Choon Tae Choi ◽  
Hyung Jae Lee
Keyword(s):  
Electron Transport ◽  
Room Temperature ◽  
Low Field ◽  
Field Electron

Low-field and high-field electron transport in zinc blende InN

2009 ◽  
Vol 94 (2) ◽  
pp. 022102 ◽  
Author(s):  
V. M. Polyakov ◽  
F. Schwierz ◽  
F. Fuchs ◽  
J. Furthmüller ◽  
F. Bechstedt
Keyword(s):  
Electron Transport ◽  
High Field ◽  
Low Field ◽  
Zinc Blende ◽  
Field Electron

On Electrons Mobility in Heavily Nitrogen Doped 4H-SiC

2017 ◽  
Vol 897 ◽  
pp. 254-257 ◽  
Author(s):  
Konstantin V. Vasilevskiy ◽  
Sandip Kumar Roy ◽  
Neal Wood ◽  
Alton B. Horsfall ◽  
Nick G. Wright
Keyword(s):  
Ion Implantation ◽  
Carrier Concentration ◽  
Electron Mobility ◽  
Room Temperature ◽  
Empirical Expression ◽  
Nitrogen Doped ◽  
Low Field ◽  
Field Electron ◽  
Van Der Pauw ◽  
Fitting Parameters

Low field electron mobility in heavily nitrogen doped 4H-SiC epitaxial layers as well as in the regions formed by ion implantation was extracted from Hall and van der Pauw measurements. The measurements were done at room temperature in 4H-SiC samples with carrier concentrations ranged from 2.8×1018 to 2.3×1019 cm-3. Fitting parameters in empirical expression given by Caughey and Thomas for room temperature low field electron mobility depending on carrier concentration in 4H-SiC were extracted.

Anisotropic Transport in InGaAs/GaAs Heterostructures Grown by Movpe

1989 ◽  
Vol 160 ◽  
Author(s):  
Qing Sun ◽  
D. Morris ◽  
C. Lacelle ◽  
A.P. Roth
Keyword(s):  
Electron Transport ◽  
Lattice Mismatch ◽  
Photoluminescence Spectra ◽  
Hall Measurements ◽  
Anisotropic Properties ◽  
Low Field ◽  
Gaas Substrates ◽  
Field Electron ◽  
Anisotropic Transport

AbstractAnisotropic electron transport has been observed in InxGa1-xAs/GaAs heterostructures grown by MOVPE on (001) and intentionally misoriented GaAs substrates. The low field electron mobilities in two perpendicular directions are found to be higher in the [110] direction than in the [110] direction. The ratio of µ[110]/µ[110] derived from Hall measurements is related to the degree of substrate misorientation as well as epilayer composition. Finally, the photoluminescence spectra are polarized along orthogonal <110> directions. These anisotropic properties are directly related to the anisotropy of [110] and [110] dislocations due to lattice mismatch between the substrates and the layers.

COMPARISON OF HIGH AND LOW FIELD ELECTRON TRANSPORT IN Al0.2Ga0.8N, AlN AND GaN

2008 ◽  
Vol 22 (28) ◽  
pp. 2793-2799
Author(s):  
H. ARABSHAHI ◽  
M. REZAEE ROKN-ABADI ◽  
M. DASTRAS
Keyword(s):  
Electron Transport ◽  
Room Temperature ◽  
Experimental Information ◽  
Band Model ◽  
Mass Energy ◽  
Alloy Scattering ◽  
Ternary Compounds ◽  
Transport Dynamics ◽  
Low Field ◽  
Comprehensive Study

We present a comprehensive study of the transport dynamics of electrons in the binary and ternary compounds AlN , GaN and Al 0.2 Ga 0.8 N . Calculations are made using a non-parabolic effective mass energy band model, Monte Carlo simulation that includes all of the major scattering mechanisms. The band parameters used in the simulation are extracted from optimized pseudopotential band calculations to ensure excellent agreement with experimental information and ab initio band models. The effects of alloy scattering on the electron transport physics are examined. The steady-state velocity field curves and low field mobilities are calculated at room temperature. The results are in fair agreement with other recent calculations.

Monte Carlo studies of low-field electron transport in monolayer silicene and graphene

2016 ◽  
Vol 213 (11) ◽  
pp. 2916-2920 ◽  
Author(s):  
Piotr Borowik ◽  
Jean-Luc Thobel ◽  
Leszek Adamowicz
Keyword(s):  
Monte Carlo ◽  
Electron Transport ◽  
Low Field ◽  
Field Electron ◽  
Monte Carlo Studies
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