Raman Characterization of InSb/GaAs Grown by Metalorganic Magnetron Sputtering

1989 ◽  
Vol 160 ◽  
Author(s):  
Z. C. Feng ◽  
S. Perkowitz ◽  
T. S. Rao ◽  
J. B. Webb
Keyword(s):  
Magnetron Sputtering ◽  
Lattice Mismatch ◽  
Longitudinal Optical ◽  
Biaxial Stress ◽  
High Quality ◽  
Gaas Substrates ◽  
Phonon Peak ◽  
Raman Characterization

AbstractThe new technique of metalorganic magnetron sputtering (MOMS) produces high-quality (100) epitaxial InSb films on (100) GaAs substrates, despite the large 14.6% lattice mismatch between InSb and GaAs. We have used Raman scattering to examine MOMS-grown InSb films of thicknesses 0.17 - 2.67 µm, and commercial bulk InSb. We observe the longitudinal optical (LO) phonon peak, and the second order 2LO peak, which is enhanced by outgoing resonance with the E1 + Δ1, gap of InSb. The half-widths and intensities of these bands are related to sample quality as a function of film thickness and to the role of biaxial stress in the InSb film.

Raman Characterization of Composition and Strain in Si1−xGex/Si Heterostructures

1999 ◽  
Vol 591 ◽  
Author(s):  
Ran Liu ◽  
B. Tillack ◽  
P. Zaumseil
Keyword(s):  
Lattice Mismatch ◽  
Uniaxial Stress ◽  
Longitudinal Optical ◽  
Biaxial Stress ◽  
Optical Phonon Mode ◽  
Polarized Raman ◽  
First Time ◽  
Strain Frequency ◽  
Raman Characterization

ABSTRACTHigh quality epitaxial Sil−xGex/Si (x = 0.09 to 0.27) samples were studied with polarized Raman scattering technique. The LO (longitudinal optical) -TO (transversal optical) phonon mode splitting due to the tetragonal strain imposed by the lattice mismatch between Sil−xGex and Si was observed for the first time in such structures. In contrast to the case of uniaxial stress, the biaxial stress induces a larger strain frequency shift for the LO mode than for the TO mode. The phonon strain shift coefficient for the LO mode was found to be 1010 cm−1, which is larger than most of the values reported in the literatures, and almost composition independent throughout the range of x≤0.27. We argue that the smaller LO strain shift coefficients indicate that the Sil−xGex films used in previous work were partially relaxed.

Raman characterization of molecular‐beam‐epitaxy‐grown GaAlSb on GaSb and GaAs substrates

1989 ◽  
Vol 65 (5) ◽  
pp. 1942-1946 ◽  
Author(s):  
Miles Haines ◽  
T. Kerr ◽  
S. Newstead ◽  
P. B. Kirby
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Gaas Substrates ◽  
Raman Characterization

Mineralogical applications of the analytical SEM in archaeology

1987 ◽  
Vol 51 (359) ◽  
pp. 21-31 ◽  
Author(s):  
I. C. Freestone ◽  
A. P. Middleton
Keyword(s):  
Elemental Analysis ◽  
Raw Materials ◽  
Energy Dispersive Spectrometer ◽  
Energy Dispersive ◽  
High Quality ◽  
Mineralogical Investigation ◽  
Modern Analytical ◽  
Quality Imaging

AbstractThe modern analytical SEM, which can provide high-quality imaging facilities together with quantitative elemental analysis using an energy-dispersive spectrometer, is finding wide application in the investigation of archaeological problems. Many of these investigations involve the study of silicate and carbonate-based artefacts which may be relatively unmodified from their original geological parent raw materials so that mineralogically based interpretations are often appropriate. In this paper we present a series of examples illustrating the role of the analytical SEM in the mineralogical investigation of archaeological problems, including the characterization and provenancing of geological raw materials, the elucidation of the processes used to transform those raw materials into useful objects and the recognition and characterization of changes which archaeological artefacts may have undergone during burial or during storage.

Magnetron sputtering growth and characterization of high quality single crystal Ga-doped n-ZnO thin films

2005 ◽  
Vol 20 (9) ◽  
pp. L43-L46 ◽  
Author(s):  
Tae-hwan Kim ◽  
Sang-Hun Jeong ◽  
Il-Soo Kim ◽  
Sang Sub Kim ◽  
Byung-Teak Lee
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Single Crystal ◽  
Zno Thin Films ◽  
High Quality ◽  
High Quality Single Crystal
Sign in / Sign up

Export Citation Format

Share Document