Metalorganic Magnetron Sputter Deposition of In1-xGax on (100)GaAs

1989 ◽  
Vol 160 ◽  
Author(s):  
R. Rousina ◽  
J.B. Webb ◽  
J.P. Noad
Keyword(s):  
Lattice Mismatch ◽  
Sputter Deposition ◽  
Temperature Growth ◽  
Large Lattice ◽  
Epitaxial Deposition ◽  
Magnetron Sputter Deposition ◽  
Large Lattice Mismatch ◽  
Magnetron Sputter ◽  
First Time ◽  
Constant Growth

AbstractThis work reports for the first time, the epitaxial deposition of ln1-xGaxSb on (100)GaAs by Metalorganic Magnetron Sputtering. High quality films could be deposited on GaAs over the entire compositional range despite the large lattice mismatch between the film and substrate (14.6% for InSb and 7.8% for GaSb). The composition of the layers was found to be directly related to the trimethylgallium and trimethylindium fluxes at constant growth temperature. Growth rates of 1 µm/hr for the GaSb and 3 µm/hr for the InSb were observed.

Strain Relief in SrF2 Epitaxial Films on Si(111) Substrates

1992 ◽  
Vol 263 ◽  
Author(s):  
Weidan Li ◽  
Anthony P. Taylor ◽  
Leo J. Schowalter
Keyword(s):  
Film Thickness ◽  
Lattice Mismatch ◽  
Strained Layers ◽  
Mbe Growth ◽  
Molecular Beam Epitaxial ◽  
Ion Channeling ◽  
Large Lattice ◽  
Large Lattice Mismatch ◽  
Relationship Of ◽  
First Time

ABSTRACTMolecular beam epitaxial (MBE) growth condition of SrF2 directly on Si(111) substrates has been optimized in terms of both Xmin and the surface morphology. Lattice distortion measurements were carried out with ion channeling along off-normal channeling directions in the strained layers grown at the optimal condition. The relationship of residual strain vs. film thickness for SrF2 on Si(111) was provided by the first time. The experimental data demonstrated a special thickness in this relation, at which the derivative of strain vs. film thickness changes its sign. This unique behavior was understood as the result of competition between the large lattice mismatch and the large thermal mismatch between SrF2 and Si.

scholarly journals N+ Irradiation and Substrate-Induced Variability in the Metamagnetic Phase Transition of FeRh Films

Coatings ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 661
Author(s):  
Steven P. Bennett ◽  
Samuel W. LaGasse ◽  
Marc Currie ◽  
Olaf Van’t Erve ◽  
Joseph C. Prestigiacomo ◽  
...  
Keyword(s):  
Phase Transition ◽  
Surface Morphology ◽  
Epitaxial Film ◽  
Lattice Mismatch ◽  
Ion Irradiation ◽  
Growth Conditions ◽  
Large Lattice ◽  
Magnetron Sputter Deposition ◽  
Weber Type ◽  
Large Lattice Mismatch

Metamagnetic FeRh has been the focus of numerous studies for its highly unique antiferromagnetic (AF) to ferromagnetic (FM) metamagnetic transition. While this phase transition usually occurs above room temperature (often Tc > 400 K), both ion irradiation and strained epitaxial growth have been used to bring it to applicable temperatures. Nevertheless, cross sample variability is pervasive in these studies. Here we explore the optical and magnetic properties of 35 nm thick FeRh grown by magnetron sputter deposition simultaneously on two different single crystal substrates: epitaxially on MgO (001) and highly strained with large lattice mismatch on Al2O3 (1000). We then irradiate the epitaxial film with 5 keV N+ ions to introduce disorder (and to a lesser extent, modify chemical composition) without effecting the surface morphology. We find that the phase-transitional properties of both films are strikingly different due to the large lattice mismatch, despite being grown in tandem with nominally identical growth conditions including Fe/Rh stoichiometry, pressure, and temperature. We observe that N+ implantation lowers Tc by ~60 K, yielding a sample with nominally the same transition temperature as the non-epitaxial film on sapphire, yet with a significantly increased magnetic moment, a larger magnetization change and a more abrupt transition profile. We attribute these differences to the Volmer-Weber type growth mode induced by the sapphire substrate and the resulting rougher surface morphology.

scholarly journals Enhanced luminescence/photodetecting bifunctional devices based on ZnO:Ga microwire/p-Si heterojunction by incorporating Ag nanowires

2021 ◽  
Author(s):  
Mingming Jiang ◽  
Yang Liu ◽  
Ruiming Dai ◽  
Kai Tang ◽  
Peng Wan ◽  
...  
Keyword(s):  
Band Gap ◽  
Carrier Mobility ◽  
Lattice Mismatch ◽  
Semiconductor Materials ◽  
Large Lattice ◽  
Ag Nanowires ◽  
Large Lattice Mismatch ◽  
Enhanced Luminescence ◽  
Indirect Band Gap

Suffering from the indirect band gap, low carrier mobility, and large lattice mismatch with other semiconductor materials, one of the current challenges in Si-based materials and structures is to prepare...

Energetic particle fluxes in magnetron sputter deposition of a-Si:H

1991 ◽  
Vol 137-138 ◽  
pp. 783-786 ◽  
Author(s):  
Alan M. Myers ◽  
James R. Doyle ◽  
G. Jeff Feng ◽  
Nagi Maley ◽  
David L. Ruzic ◽  
...  
Keyword(s):  
Energetic Particle ◽  
Sputter Deposition ◽  
Magnetron Sputter Deposition ◽  
Magnetron Sputter ◽  
Particle Fluxes

Properties of Al Films Depend on Substrate Temperature by DC Magnetron Sputter Deposition

2013 ◽  
Vol 662 ◽  
pp. 413-416
Author(s):  
Yi Shen ◽  
Ruo He Yao
Keyword(s):  
Grain Size ◽  
Film Thickness ◽  
Substrate Temperature ◽  
Sheet Resistance ◽  
Cross Section ◽  
Sputter Deposition ◽  
Surface Profiling ◽  
Magnetron Sputter Deposition ◽  
Magnetron Sputter ◽  
Substrate Temperatures

Al films were prepared by DC magnetron sputter deposition at different substrate temperatures. The sheet resistance of the films was measured by four point probe sheet resistance meter, and the film thickness, which was obtained by surface profiling system. The surface and cross-section morphology of the films was observed by AFM and FESEM. As a result, the resistivity of the films decreases obviously as the substrate temperature increases gradually. The higher substrate temperature is, the rougher the films surface is and the larger the grain size is.

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