Epitaxial growth of Matched Metallic ErP0.6 As0.4 layers on GaAs

1989 ◽  
Vol 160 ◽  
Author(s):  
A. Guivarc'h ◽  
A. Le Corre ◽  
J. Caulet ◽  
B. Guenais ◽  
M. Minier ◽  
...  
Keyword(s):  
Room Temperature ◽  
Lattice Mismatch ◽  
Compound Semiconductor ◽  
The Other ◽  
Antiferromagnetic Phase ◽  
Helium Temperature ◽  
Metallic Behavior ◽  
Semiconductor Heterostructure ◽  
Crystal Film ◽  
Lattice Matched

AbstractSuccessful growth of (001 )ErP0.6As0.4 single crystal film on (001) GaAs has been demonstrated. The epitaxial metallic layers reproducibly showed lattice mismatch below 5 10-4. This is, to our knowledge, the first report of a stable, epitaxial and lattice-matched metal/compound semiconductor heterostructure. The ErP0.6As0.4/n-GaAs diodes yielded excellent I-V characteristics with an ideality factor of 1.1 and barrier height of 0.88 eV. For a 240 A-thick film, metallic behavior was observed with resistivities of 25 and 86 µΩcm at 1.5 K and room temperature, respectively. As the other Er compounds ErP, ErAs, ErSb and ErSi2, ErP0.6As0.4 presents an abrupt drop in resistivity in the vicinity of the liquid helium temperature, due to a paramagnetic to antiferromagnetic phase transition.

Thermal Strain Study of Almost Lattice-Matched Epitaxial InuGa1-uAs1-vP1-v Films on InP(100) Substrates

1989 ◽  
Vol 160 ◽  
Author(s):  
G. Bai ◽  
M-A. Nicolet ◽  
S.-J. Kim ◽  
R.G. Sobers ◽  
J.W. Lee ◽  
...  
Keyword(s):  
Room Temperature ◽  
Epitaxial Film ◽  
Lattice Mismatch ◽  
Thermal Strain ◽  
Growth Direction ◽  
Epitaxial Films ◽  
Double Crystal ◽  
X Ray ◽  
Lattice Matched ◽  
Coherent Interfaces

AbstractSingle layers of ~ 0.5µm thick InuGa1-uAs1-vPv (0.52 < u < 0.63 and 0.03 < v < 0.16) were grown epitaxially on InP(100) substrates by liquid phase epitaxy at ~ 630°C. The compositions of the films were chosen to yield a constant banndgap of ~ 0.8 eV (λ = 1.55 µm) at room temperature. The lattice mismatch at room temperature between the epitaxial film and the substrate varies from - 4 × 10-3 to + 4 × 10-3. The strain in the films was characterized in air by x-ray double crystal diffractometry with a controllable heating stage from 23°C to ~ 700°C. All the samples have an almost coherent interfaces from 23°C to about ~ 330°C with the lattice mismatch accomodated mainly by the tetragonal distortion of the epitaxial films. In this temperature range, the x-ray strain in the growth direction increases linearly with temperature at a rate of (2.0 ± 0.4) × 10-6/°C and the strain state of the films is reversible. Once the samples are heated above ~ 300°C, a significant irreversible deterioration of the epitaxial films sets in.

Chemical Beam Epitaxy Grown Indium Gallium Arsenide Tunnel Junctions

1993 ◽  
Vol 300 ◽  
Author(s):  
N. Medelci ◽  
A. Bensaoula ◽  
M. F. Vilela ◽  
A. Freundlich
Keyword(s):  
Indium Gallium Arsenide ◽  
Room Temperature ◽  
Lattice Mismatch ◽  
Tunnel Junctions ◽  
Chemical Beam Epitaxy ◽  
Temperature Peak ◽  
Temperature Dependent ◽  
Peak Current ◽  
Device Structures ◽  
Lattice Matched

ABSTRACTp+/n+ In0.53Ga0.47As tunnel junctions with room temperature peak to valley ratio of 9:1 are demonstrated. The device structures were grown on both InP and GaAs (4% lattice mismatch) using Chemical Beam Epitaxy (CBE). Be and Si were used as dopants. The devices grown on InP exhibit room temperature peak current in excess of 1000 A/cm2. The peak current of 452 A/cm2 achieved on lattice mismatched material (GaAs) is comparable to the highest results previously reported on lattice matched material (InP). Finally, The device characteristics and the influence of different fabrication steps on the performance of these devices are discussed based on temperature dependent I-V measurements.

Thermal Expansion Behavior of ZnSe and ZnS0.03Se0.97 Epilayers on GaAs at Temperatures in the Range, 25°C - 250°C

1994 ◽  
Vol 340 ◽  
Author(s):  
J. R. Kim ◽  
R. M. Park ◽  
K. S. Jones
Keyword(s):  
Thermal Expansion ◽  
Room Temperature ◽  
Lattice Mismatch ◽  
X Ray Diffraction ◽  
Thermal Expansion Behavior ◽  
Lattice Constants ◽  
Thermal Expansion Coefficients ◽  
Expansion Behavior ◽  
Expansion Coefficients ◽  
Lattice Matched

ABSTRACTThe thermal expansion behavior of ZnSe and ZnS0.03Se0.97 epilayers grown on GaAs has been investigated using high resolution X-ray diffraction at temperatures between room temperature and the growth temperature. The lattice parameters perpendicular and parallel to the surface were measured with the Bond's method. The lattice mismatch for a partially relaxed ZnSe layer was Δa(⊥)/a =2300 ppm and Δa(‖)/a = 2600 ppm at room temperature(R.T.) and Δa (⊥)/a =3600 ppm and Δa(‖)/a =2400 ppm at 250°C. For ZnS0.03Se0.97 which is almost lattice matched at R.T. to GaAs, Δa(⊥)/a =200 ppm, Δa(⊥)/a =20ppmatR.T. and Δa(⊥)/a =1400ppm, Δa(⊥)/a =50ppm at 250°C. The relaxed lattice constants were evaluated and the thermal expansion coefficients of relaxed ZnSe layers were found to vary from 7.8*10−6/°C at room temperature to 12.2*10−6/°C at 250°C and for ZnS0.03Se0.97 layers the variation was from 7.5*10−6/°C at R.T. to 11.7*10−6/°C at 250°C.

Electron microscope studies of the plastic deformation of ternary alloys based on GaAs

1990 ◽  
Vol 48 (4) ◽  
pp. 1120-1120
Author(s):  
R. Haswell ◽  
U. Bangert ◽  
P. Charsley
Keyword(s):  
Plastic Deformation ◽  
Electron Microscope ◽  
Room Temperature ◽  
Stacking Faults ◽  
The Other ◽  
Ternary Alloys ◽  
Dislocation Mobility ◽  
Semiconducting Materials ◽  
Micro Indentation

A knowledge of the behaviour of dislocations in semiconducting materials is essential to the understanding of devices which use them . This work is concerned with dislocations in alloys related to the semiconductor GaAs . Previous work on GaAs has shown that microtwinning occurs on one of the <110> rosette arms after indentation in preference to the other . We have shown that the effect of replacing some of the Ga atoms by Al results in microtwinning in both of the rosette arms.In the work to be reported dislocations in specimens of different compositions of Gax Al(1-x) As and Gax In(1-x) As have been studied by using micro indentation on a (001) face at room temperature . A range of electron microscope techniques have been used to investigate the type of dislocations and stacking faults/microtwins in the rosette arms , which are parallel to the [110] and [10] , as a function of composition for both alloys . Under certain conditions microtwinning occurs in both directions . This will be discussed in terms of the dislocation mobility.

HAYNES STELLITE ALLOY No. 98M2

Alloy Digest ◽  
1960 ◽  
Vol 9 (7) ◽  
Keyword(s):  
Fracture Toughness ◽  
Compressive Strength ◽  
Physical Properties ◽  
Room Temperature ◽  
Base Alloy ◽  
Heat Treating ◽  
The Other ◽  
Stellite Alloy ◽  
Cobalt Base Alloy ◽  
Cobalt Base

Abstract HAYNES STELLITE 98M2 Alloy is a cobalt-base alloy having higher compressive strength and higher hardness than all the other cobalt-base alloys at room temperature and in the red heat range. This datasheet provides information on composition, physical properties, hardness, elasticity, tensile properties, and compressive strength as well as fracture toughness. It also includes information on heat treating, machining, and joining. Filing Code: Co-22. Producer or source: Haynes Stellite Company.

The Reactivity of Different Active Forms of Sodium Carbonate with Respect to Sulfur Dioxide

1992 ◽  
Vol 57 (11) ◽  
pp. 2302-2308
Author(s):  
Karel Mocek ◽  
Erich Lippert ◽  
Emerich Erdös
Keyword(s):  
Thermal Decomposition ◽  
Liquid Phase ◽  
Sulfur Dioxide ◽  
Specific Surface ◽  
Surface Area ◽  
Sodium Carbonate ◽  
Room Temperature ◽  
Active Form ◽  
The Other ◽  
Kinetics Of

The kinetics of the reaction of solid sodium carbonate with sulfur dioxide depends on the microstructure of the solid, which in turn is affected by the way and conditions of its preparation. The active form, analogous to that obtained by thermal decomposition of NaHCO3, emerges from the dehydration of Na2CO3 . 10 H2O in a vacuum or its weathering in air at room temperature. The two active forms are porous and have approximately the same specific surface area. Partial hydration of the active Na2CO3 in air at room temperature followed by thermal dehydration does not bring about a significant decrease in reactivity. On the other hand, if the preparation of anhydrous Na2CO3 involves, partly or completely, the liquid phase, the reactivity of the product is substantially lower.

Van der Waals Epitaxy of GaSe on GaAs(111)

1994 ◽  
Vol 340 ◽  
Author(s):  
L. E. Rumaner ◽  
F.S. Ohuchi
Keyword(s):  
Lattice Mismatch ◽  
Van Der Waals ◽  
Three Dimensional ◽  
Structured Materials ◽  
Lattice Matching ◽  
Molecular Beam Deposition ◽  
Crystal Films ◽  
Low Dimensional ◽  
Matching Constraints ◽  
Lattice Matched

ABSTRACTAlthough heteroepitaxy of lattice-matched and lattice-mismatched materials leading to artificially structured materials has resulted in impressive performance in various electronics devices, material combinations are usually limited by lattice matching constraints. A new concept for fabricating material systems using the atomically abrupt and low dimensional nature of layered materials, called van der Waals epitaxy (VDWE), has been developed. GaSe (Eg = 2.1 eV) has been deposited on the three dimensional surface of GaAs (111) using a molecular beam deposition system. GaSe was evaporated from a single Knudsen source, impinging on a heated substrate. Even with a lattice mismatch of 6% between the substrate and the growing film, good quality single crystal films were grown as determined by RHEED. The films have further been analyzed using a complementary combination of XPS and X-ray reflectivity.

Transition Insulator-Metal and Antiferromagnetic-Paramagnetic Cu Doped in La0.47Ca0.53MnO3

2015 ◽  
Vol 1123 ◽  
pp. 73-77 ◽  
Author(s):  
Yohanes Edi Gunanto ◽  
K. Sinaga ◽  
B. Kurniawan ◽  
S. Poertadji ◽  
H. Tanaka ◽  
...  
Keyword(s):  
High Resolution ◽  
Low Temperature ◽  
Magnetic Structure ◽  
Room Temperature ◽  
Paramagnetic Phase ◽  
Perovskite Manganites ◽  
Antiferromagnetic Phase ◽  
Temperature Transition ◽  
Cu Doping ◽  
Metal State

The study of the perovskite manganites La0.47Ca0.53Mn1-xCuxO3 with x = 0, 0.06, 0.09, and 0.13 has been done. The magnetic structure was determined using high-resolution neutron scattering at room temperature and low temperature. All samples were paramagnetic at room temperature and antiferromagnetic at low temperature. Using the SQUID Quantum Design, the samples showed that the doping of the insulating antiferromagnetic phase La0.47Ca0.53MnO3 with Cu doping resulted in the temperature transition from an insulator to metal state, and an antiferromagnetic to paramagnetic phase. The temperature transition from an insulator to metal state ranged from 23 to 100 K and from 200 to 230 K for the transition from an antiferromagnetic to paramagnetic phase.

scholarly journals Synthesis of spiro[dihydropyridine-oxindoles] via three-component reaction of arylamine, isatin and cyclopentane-1,3-dione

2013 ◽  
Vol 9 ◽  
pp. 8-14 ◽  
Author(s):  
Yan Sun ◽  
Jing Sun ◽  
Chao-Guo Yan
Keyword(s):  
Acetic Acid ◽  
Reaction Mechanism ◽  
Room Temperature ◽  
The Other ◽  
Other Hand ◽  
Three Component Reaction ◽  
High Yields

A fast and convenient protocol for the synthesis of novel spiro[dihydropyridine-oxindole] derivatives in satisfactory yields was developed by the three-component reactions of arylamine, isatin and cyclopentane-1,3-dione in acetic acid at room temperature. On the other hand the condensation of isatin with two equivalents of cyclopentane-1,3-dione gave 3,3-bis(2-hydroxy-5-oxo-cyclopent-1-enyl)oxindole in high yields. The reaction mechanism and substrate scope of this novel reaction is briefly discussed.

On the Chemistry of Tetrabenzyl Thiuram Disulfide and Tetramethyl Thiuram Disulfide with Bis (Triethoxysilylpropyl) Tetrasulfide in Silica Compounds

2003 ◽  
Vol 76 (4) ◽  
pp. 876-891 ◽  
Author(s):  
R. N. Datta ◽  
A. G. Talma ◽  
S. Datta ◽  
P. G. J. Nieuwenhuis ◽  
W. J. Nijenhuis ◽  
...  
Keyword(s):  
High Performance ◽  
Room Temperature ◽  
Succinic Anhydride ◽  
Dynamic Properties ◽  
The Other ◽  
Resonance Spectroscopy ◽  
Reaction Products ◽  
Negative Effect ◽  
Higher Temperature ◽  
Analytical Tools

Abstract The use of thiurams such as Tetramethyl thiuram disulfide (TMTD) or Tetrabenzyl thiuram disulfide (TBzTD) has been explored to achieve higher cure efficiency. The studies suggest that a clear difference exists between the effect of TMTD versus TBzTD. TMTD reacts with Bis (triethoxysilylpropyl) tetrasulfide (TESPT) and this reaction can take place even at room temperature. On the other hand, the reaction of TBzTD with TESPT is slow and takes place only at higher temperature. High Performance Liquid Chromatography (HPLC) with mass (MS) detection, Nuclear Magnetic Resonance Spectroscopy (NMR) and other analytical tools have been used to understand the differences between the reaction of TMTD and TESPT versus TBzTD and TESPT. The reaction products originating from these reactions are also identified. These studies indicate that unlike TMTD, TBzTD improves the cure efficiency allowing faster cure without significant effect on processing characteristics as well as dynamic properties. The loading of TESPT is reduced in a typical Green tire compound and the negative effect on viscosity is repaired by addition of anhydrides, such as succinic anhydride, maleic anhydride, etc.

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