Mechanism of Chromium Deposition from Cr(CO)6 by Uv Laser Light

1989 ◽  
Vol 158 ◽  
Author(s):  
R. Nowak ◽  
P. Hess
Keyword(s):  
Gas Phase ◽  
Metal Film ◽  
Film Growth ◽  
Laser Light ◽  
Film Deposition ◽  
Uv Laser ◽  
Impurity Incorporation ◽  
Metal Atoms ◽  
Chromium Films ◽  
Main Growth

ABSTRACTThe mechanism of metal film deposition from carbonyls as precursors is discussed in detail. It is shown that different species produced by UV laser irradiation in the gas phase contribute to film growth. Highly reactive species such as metal atoms may be important during the nucleation phase, whereas more stable carbonyls are responsible for the main growth process. This indicates that the main decarbonylation effect occurs at the surface. The higher level of impurity incorporation in chromium films in comparison with nickel films is explained by the relative position of the Fermi level in the d-band of Ni and Cr with respect to the 2π* level of CO, which favors CO bond dissociation in the case of chromium.

Deposition of Ceramic Films by A Novel Pulsed-Gas Mocvd Technique

1992 ◽  
Vol 271 ◽  
Author(s):  
Kenneth A. Aitchison ◽  
James D. Barrie ◽  
Joseph Ciofalo
Keyword(s):  
Gas Phase ◽  
Film Growth ◽  
Flow Reactor ◽  
Substrate Surface ◽  
Chemical Vapor ◽  
Film Deposition ◽  
Organic Chemical ◽  
Oxide Systems ◽  
Metal Organic ◽  
Mocvd Technique

ABSTRACTMetal-Organic Chemical Vapor Deposition (MOCVD) is a versatile technique for the deposition of thin films of metals, semiconductors and ceramics. Commonly used hot wall flow-reactor designs suffer from a number of limitations. Chemical processes occurring in these reactors typically include a combination of homogeneous (gas-phase) and heterogeneous (gas-surface) reactions. These complex conditions are difficult to model and are poorly understood. In addition, flow reactors use large quantities of expensive precursor materials and are not well suited to the formation of abrupt interfaces. We report here a novel MOCVD technique which addresses these problems and enables a more thorough mechanistic understanding of the heterogeneous decomposition pathways of metal-organic compounds. This technique, the low-pressure pulsed gas method, has been demonstrated to provide high deposition rates with excellent control over film thickness. The deposition conditions effectively eliminate homogeneous processes allowing surface-mediated reactions to dominate. This decoupling of gas-phase chemistry from film deposition allows a better understanding of reaction mechanisms and provides better control over film growth. Both single metal oxides and binary oxide systems have been investigated on a variety of substrate materials. Effects of precursor chemistry, substrate surface, temperature and pressure on film composition and morphology will be discussed.

Studies of SiH2Ci2/H2 Gas Phase Chemistry for Selective Thin Film Growth of Crystalline Silicon, c-Si, Using Remote Plasma Enhanced Chemical Vapor Deposition

1991 ◽  
Vol 220 ◽  
Author(s):  
J. A. Theil ◽  
G. Lucovsky ◽  
S. V. Hattangady ◽  
G. G. Fountain ◽  
R. J. Markunas
Keyword(s):  
Gas Phase ◽  
Film Growth ◽  
Crystalline Silicon ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Film Deposition ◽  
Selective Deposition ◽  
Gas Phase Chemistry ◽  
Phase Chemistry

ABSTRACTConventional high temperature, >800°C, CVD processes, utilizing SiH2Ci2 promote selective deposition of c-Si onto c-Si, but not on SiO2 surfaces. We show that low temperature, 300°C remote PECVD, with rf-excited He plasmas, and SiH2Ci2 and H2 injected downstream, also selectively deposits c-Si on c-Si and not SiO2 surfaces. This preliminary study employs in-situ mass spectrometry, MS, to determine the species responsible for selective deposition process reaction pathways. These MS studies suggest that species responsible for film deposition are Si-containing fragments of the SiH2Ci2 molecule, e.g., SiH2Ci, SiCi2H, etc., while the species responsible for inhibiting deposition on the SiO2 surfaces are by-products of the break-up of the SiH2Ci2 molecule in the gas phase, e.g., H-atoms, HCI and H2Ci+ ions.

Metallorganic Chemical Vapor Deposition of Ir Films With Iridium Acetylacetonate and Carbonyl Precursors

1998 ◽  
Vol 541 ◽  
Author(s):  
Y.-M. Sun ◽  
J. Endle ◽  
K. Smith ◽  
J. G. Ekerdt ◽  
R. L. Hance ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Film Growth ◽  
Chemical Vapor ◽  
Film Deposition ◽  
Film Deposition Rate ◽  
Phase Nucleation ◽  
Temperature Programmed ◽  
Reactive Gas

AbstractIridium acetylacetonate, dicarbonylacetylacetonato iridium, and tetrakisiridium dodecacarbonyl (iridium carbonyl) have been evaluated for metallorganic chemical vapor deposition (CVD) of pure iridium films. Temperature programmed mass spectroscopy reveals that iridium tris-acetylacetonate and dicarbonylacetylactonato iridium have high thermal stability and sublime at 200 and 100 °C in vacuum, respectively. Iridium carbonyl decomposes upon sublimation at temperatures above 120 °C. Pure CVD Ir films were obtained using iridium carbonyl; however, carbon is incorporated into the iridium films with the iridium trisacetylacetonate and dicarbonylacetylactonato iridium precursors unless a reactive gas, such as oxygen is co-dosed. Co-dosed oxygen also increases the film deposition rate and significantly decreases the film growth temperatures. Particles were found on the films grown with iridium carbonyl between 280 to 400 °C, indicating that gas phase nucleation occurred during deposition.

Site-selective, resonant photochemical desorption of metal atoms with laser light: manipulation of metal surfaces on the atomic scale

2003 ◽  
Vol 526 (1-2) ◽  
pp. L151-L157 ◽  
Author(s):  
D. Martin ◽  
T. Jacob ◽  
F. Stietz ◽  
B. Fricke ◽  
F. Träger
Keyword(s):  
Metal Surfaces ◽  
Laser Light ◽  
Atomic Scale ◽  
Light Manipulation ◽  
Metal Atoms ◽  
Site Selective

scholarly journals Measurement of the Energetics of Metal Film Growth on a Semiconductor:Ag/Si(100)−(2×1)

2001 ◽  
Vol 87 (10) ◽  
Author(s):  
D. E. Starr ◽  
J. T. Ranney ◽  
J. H. Larsen ◽  
J. E. Musgrove ◽  
C. T. Campbell
Keyword(s):  
Metal Film ◽  
Film Growth

scholarly journals A FRACTAL MODEL FOR THE FIRST STAGES OF THIN FILM GROWTH

Fractals ◽  
1996 ◽  
Vol 04 (03) ◽  
pp. 321-329 ◽  
Author(s):  
PABLO JENSEN ◽  
ALBERT-LÁSZLÓ BARABÁSI ◽  
HERNÁN LARRALDE ◽  
SHLOMO HAVLIN ◽  
H. EUGENE STANLEY
Keyword(s):  
Thin Film ◽  
Film Growth ◽  
Dynamical Evolution ◽  
Thin Film Deposition ◽  
Fractal Model ◽  
Film Deposition ◽  
Thin Film Growth ◽  
Small Cluster ◽  
Diffusion Controlled ◽  
Cluster Diffusion

In this paper, we briefly review a model that describes the diffusion-controlled aggregation exhibited by particles as they are deposited on a surface. This model allows us to understand many experiments of thin film deposition. In the Sec. 1, we describe the model, which incorporates deposition, particle and cluster diffusion, and aggregation. In Sec. 2, we study the dynamical evolution of the model. Finally, we analyze the effects of small cluster mobility and show that the introduction of cluster diffusion dramatically affects the dynamics of film growth. Some of these effects can be tested experimentally.

Metal film deposition on carbon anodes for high rate charge–discharge of Li–ion batteries

1999 ◽  
Vol 15 (3) ◽  
pp. 225-229 ◽  
Author(s):  
T. Takamura ◽  
J. Suzuki ◽  
C. Yamada ◽  
K. Sumiya ◽  
K. Sekine
Keyword(s):  
Metal Film ◽  
Film Deposition ◽  
High Rate ◽  
Li Ion Batteries ◽  
Li Ion ◽  
Carbon Anodes ◽  
Charge Discharge

Direct Nucleation of Crystalline SiGe on Substrates by Reactive Thermal CVD with Si2H6 and GeF4

1997 ◽  
Vol 467 ◽  
Author(s):  
Fumio Yoshizawa ◽  
Kunihiro Shiota ◽  
Daisuke Inoue ◽  
Jun-ichi Hanna
Keyword(s):  
Growth Rate ◽  
Gas Phase ◽  
Heterogeneous Nucleation ◽  
Homogeneous Nucleation ◽  
Film Growth ◽  
Early Stage ◽  
Gaseous Mixture ◽  
The Other ◽  
Thermal Cvd ◽  
Initial Deposition

ABSTRACTPolycrystalline SiGe (poly-SiGe) film growth by reactive thermal CVD with a gaseous mixture of Si2H6 and GeF4 was investigated on various substrates such as Al,Cr, Pt, Si, ITO, ZnO and thermally grown SiO2.In Ge-rich film growth, SEM observation in the early stage of the film growth revealed that direct nucleation of crystallites took place on the substrates. The nucleation was governed by two different mechanisms: one was a heterogeneous nucleation on the surface and the other was a homogeneous nucleation in the gas phase. In the former case, the selective nucleation was observed at temperatures lower than 400°C on metal substrates and Si, where the activation of adsorbed GeF4 on the surface played a major role for the nuclei formation, leading to the selective film growth.On the other hand, the direct nucleation did not always take place in Si-rich film growth irrespective of the substrates and depended on the growth rate. In a growth rate of 3.6nm/min, the high crystallinity of poly-Si0.95Ge0.05in a 220nm-thick film was achieved at 450°C due to the no initial deposition of amorphous tissue on SiO2 substrates.

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