Excimer Laser Induced Deposition of Tungsten from W(CO)6 and WF6

1989 ◽  
Vol 158 ◽  
Author(s):  
Berthold Rager ◽  
Friedrich Bachmann
Keyword(s):  
Deposition Time ◽  
Deposition Process ◽  
Layer Growth ◽  
X Ray Diffraction ◽  
Reflectivity Measurement ◽  
Model Calculations ◽  
Deposition Parameters ◽  
Initial Stage ◽  
Deposited Films

ABSTRACTArF laser induced deposition of W from W(CO)6 and WF6 on Si/SiO2 surfaces was investigated. With an in-situ reflectivity measurement the growth of the layer could be monitored during the deposition process. We find that the initial stage of layer growth as well as the reflectivity as a function of deposition time depends on the laser fluence and on other deposition parameters. Model calculations, using the optical constants of deposited films, determined by ellipsometry, have been performed to compare the measured reflectivity curves with the calculated curves. The deposited layers have been analyzed by XPS, AES, X-ray Diffraction and Raman Spectroscopy. Additionally, experiments of direct pattern transfer deposition (via contact mask) with W(CO)6 show the presence of an involved surface process, which by Fresnel diffraction caused structures smaller than 0.5μm.

NbN Thin Film of Alternating Textures

2017 ◽  
Vol 898 ◽  
pp. 1431-1437
Author(s):  
Hong Yang Shao ◽  
Kan Zhang ◽  
Yi Dan Zhang ◽  
Mao Wen ◽  
Wei Tao Zheng
Keyword(s):  
Deposition Time ◽  
Peak Position ◽  
Preferred Orientation ◽  
Intrinsic Stress ◽  
Competitive Growth ◽  
X Ray Diffraction ◽  
X Ray ◽  
Orientation Distributions ◽  
Different Thickness ◽  
Deposited Films

The δ-NbN thin films with different thickness have been prepared by reactive magnetron sputtering at different deposition time and exhibited alternating textures between (111) and (200) orientations as a function of thickness. In addition, the grain size, peak position, morphology, residual stress and orientation distributions of the deposited films were explored by X-ray diffraction, low-angel X-ray reflectivity, scanning electron microscopy and surface profiler. The film deposited at 300 s showed a (111) preferred orientation, changing to (200) preferred orientation at 600 s, and exhibited alternating textures between (111) and (200) preferred orientations. With further increasing deposition time, in which (200) peak position and the full width at half maximum of (111) peak also displayed a trend of alternating variation with varying deposition time. The intrinsic stress for δ-NbN films calculated by Stoney equation alternately changed with alternating textures, in which (111) orientation always takes place at relatively high intrinsic stress state and vice versa. Meanwhile, the film with (111) preferred orientation showed higher density than (200) preferred orientation. The film deposited at 4800 s owned a mixed texture of (111) and (200), showing an anisotropy distribution of (111)-oriented and (200)-oriented grains, while film deposited at 7200 s owned a strong (200) texture, displaying an isotropy distribution of (200)-oriented grains. The competitive growth between (111)-oriented and (200)-oriented grains was responsibility for alternating texture.

Threshold Value of Particle Concentration in EPD: Experimental Evidence with TiO2 Organic Suspensions

2009 ◽  
Vol 412 ◽  
pp. 51-56 ◽  
Author(s):  
Simona Radice ◽  
Stefano Mischler ◽  
Johann Michler
Keyword(s):  
Particle Concentration ◽  
Deposition Time ◽  
Threshold Value ◽  
Deposition Process ◽  
Suspension Systems ◽  
Limit Value ◽  
Coating Formation ◽  
Concentration Threshold

This study was triggered by our experience on electrophoretic deposition (EPD) with different suspension systems showing evidence of a particle concentration threshold, below which no deposit was formed. In this study, the role of particle concentration in the mechanism of EPD was investigated with a model system, consisting of isopropanol suspensions with TiO2 nanosized particles (d50 = 130 nm). The investigated concentration range was 0.01 - 0.4 vol% TiO2. Constant voltage EPD tests with variable particle concentration were performed for 1 min under different applied voltages (25 - 300 V corresponding to 62.5 - 750 V/cm). A longer deposition time (30 min) was tested for a lower concentration value (0.003 vol% TiO2). The deposition process was evaluated in situ by means of the current measured during EPD. The deposits obtained were characterized by weight and profile measurements and scanning electron microscope (SEM). The results confirmed the finding of a lower limit value of particle concentration, determining a threshold in the formation of an EPD coating. Above this threshold, proportionality between deposited mass and particle concentration was observed, in agreement with the equation of Hamaker. Below this threshold, the proportionality was lost with evidence of a lack of coating formation. A possible interpretation for this experimental finding was provided.

Microstructure of In Situ Reaction TiB2/Zn-30Al-1Cu Composites Prepared by Spray Deposition Process

2015 ◽  
Vol 1120-1121 ◽  
pp. 572-575
Author(s):  
Hong Wei Liu ◽  
Feng Wang ◽  
Qiang Zhang ◽  
Xi Wu Li ◽  
Zhi Hui Li ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Spray Deposition ◽  
Deposition Process ◽  
Deposition Technique ◽  
X Ray Diffraction ◽  
X Ray ◽  
Α Phase ◽  
Scanning Electron

An innovative spray deposition technique has been applied to produce in situ TiB2/Zn-30Al-1Cu composites. The microstructures of the spray-deposited composite were studied using optical microscopy, scanning electron microscopy, and X-ray diffraction. Both theoretical and experimental results have shown that the TiB2particulates are formed in the microstructure. It was found that the TiB2particles were distributed in Zn-30Al-1Cu matrix uniformly, and the TiB2particles are about 2 μm in size. Moreover, the presence of the TiB2particles was led to increasing of α’ phase with less 2 μm size in the composites which have a tendency to decompose to α+η structure.

In-Situ Observation of Chemical Vapor Deposition of Thin Sige Films by Optical Reflection Interferometry

1994 ◽  
Vol 375 ◽  
Author(s):  
G. Ritter ◽  
B. Tillack ◽  
M. Weidner ◽  
F. G. Böbel ◽  
B. Hertel
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Ex Situ ◽  
In Situ Observation ◽  
Optical Reflection ◽  
Initial Stage

AbstractChemical Vapor Deposition of Si1-x Gex – films on Si (100) and of polycrystalline Si1-x Gex, layers on SiO2 – coated substrates have been performed at a pressure of 200 Pa in the temperature range of 500°C – 800°C, correspondingly. To observe the growth process and to characterize the growing thin films at deposition conditions an optical reflection interferometer (PYRITIERS) has been used. Comparing the data obtained at growth temperature with ex- situ measurements by spectroscopic ellipsometry the temperature dependence of optical constants of SiGe films have been evaluated. The reflectivity measurements during the deposition process allow to study the quality of the heteroepitaxial film, even in the initial stage of epitaxial growth.

Chemical Bath Deposition of CdS Thin Films: Growth and Structural Studies

1996 ◽  
Vol 426 ◽  
Author(s):  
Yuming Zhu ◽  
Dull Mao ◽  
D. L. Williamson ◽  
J. U. Trefny
Keyword(s):  
Thin Films ◽  
Structural Properties ◽  
Deposition Time ◽  
Layer Structure ◽  
Layer Growth ◽  
X Ray Diffraction ◽  
X Ray ◽  
Thiourea Solution ◽  
Cds Thin Films ◽  
Cds Films

AbstractChemical-bath-deposited CdS thin films from an ammonia-thiourea solution have been studied by x-ray diffraction, surface profilometry, ellipsometry, and other techniques. The compactness of the CdS films, structural properties of the films, and the growth mechanism have been investigated. For the deposition conditions used, we found that the film compactness reaches its maximum at a deposition time of 35 minutes. Films grown at longer deposition times are less compact, consistent with the CdS duplex layer structure proposed previously. This transition from compact layer growth to porous layer growth is important for depositing CdS films in solar cell applications. Based on x-ray diffraction (XRD) studies, we were able to determine the crystal phase, lattice constant, and other structural properties.

Chemical Properties of A-Si:H Interface Layers on Oxide-Covered and Hydrogen-Terminated Silicon

1996 ◽  
Vol 420 ◽  
Author(s):  
Jürgen Knobloch ◽  
Peter Hess
Keyword(s):  
Film Growth ◽  
Substrate Surface ◽  
Chemical Properties ◽  
Deposition Process ◽  
Native Oxide ◽  
Difference Spectra ◽  
Initial Stage ◽  
Laser Cvd ◽  
Interface Layers

AbstractHigh quality a-Si:H films were deposited by pulsed VUV (157nm) laser CVD, allowing digital control of the deposition process. Nucleation and growth on native oxide-covered Si (100) and on H-terminated Si (111) surfaces were studied in situ by FTIR transmission spectroscopy with sub-monolayer sensitivity. The film thickness was monitored simultaneously using a quartz crystal microbalance (QCM) with comparable resolution. The in situ spectra reveal that the nature of the substrate surface significantly influences the hydrogen bonding configuration in the interface region. In both cases the assumed cluster growth during the initial stage is characterized by a band around 2100cm−1, which is assigned to SiHX (x = 1 – 3) surface modes. This band broadens until the clusters coalesce and band saturation occurs. At this time a second band starts to grow at 2000cm−1, which is attributed to bulk SiH bonds. Difference spectra calculated for layers at different depths with definite thickness and the deconvolution of the broad feature observed during the very first stage of film growth indicate the existence of a hydrogen-rich layer at the substrate surface whose composition and thickness depend on the properties of the substrate surface.

Effect of Deposition Time on Structure of TiAlN Thin Films Deposited by Reactive DC Magnetron Co-Sputtering

2017 ◽  
Vol 866 ◽  
pp. 318-321 ◽  
Author(s):  
Nirun Witit-Anun ◽  
Adisorn Buranawong
Keyword(s):  
Thin Films ◽  
Elemental Composition ◽  
Deposition Time ◽  
Lattice Parameter ◽  
X Ray Diffraction ◽  
X Ray ◽  
Titanium Aluminum ◽  
Titanium Aluminum Nitride ◽  
Deposited Films ◽  
Section Analysis

Titanium aluminum nitride (TiAlN) thin films were deposited by reactive DC magnetron co-sputtering technique on Si substrate. The effect of deposition time on the structure of the TiAlN films was investigated. The crystal structure, surface morphology, thickness and elemental composition were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM) and energy dispersive X-ray spectroscopy (EDS) technique, respectively. The results showed that, all the as-deposited films were formed as a (Ti,Al)N solid solution. The as-deposited thin films exhibited a nanostructure with a crystallite size of less than 30 nm. The film thickness increase from 115 nm to 329 nm, while the lattice parameter decrease from 4.206 Å to 4.196 Å, with increasing of the deposition time. Cross section analysis by FE-SEM showed compact columnar and dense morphology as a result of increasing the deposition time. The elemental composition of the as-deposited films varied with the deposition time.

scholarly journals Effect of Temperature and Time on Nickel Aluminide Coating Deposition

2018 ◽  
Vol 37 (4) ◽  
pp. 491-496 ◽  
Author(s):  
Ali Dad Chandio ◽  
Shahid Hussain Abro
Keyword(s):  
Nickel Aluminide ◽  
Linear Trend ◽  
Aluminide Coating ◽  
Chemical Vapor ◽  
Effect Of Temperature ◽  
Chemical Vapor Deposition Method ◽  
X Ray Diffraction ◽  
Initial Stage ◽  
Low Activity

The βNiAl coating was deposited onto Nickel based CMSX-4 superalloy by in-situ CVD (Chemical Vapor Deposition) method. Main focus of this contribution was to study the influence of aluminizing time and temperature on the microstructure and thickness of the coating; this was followed by examination by XRD (X-Ray Diffraction), electron microscope. Results suggest that an incremental variation in temperature alters the coating activities from HA (High Activity) to LA (Low Activity). This is exhibited by the resultant CT (Coating Thickness) since HA coatings are thicker than LA counterparts. The microstructure of the coating formed at low temperature (or HA ones) showed a large amount of α-Cr precipitates while one formed at high temperature (or LA ones) exhibited lower amounts of such precipitates. Moreover, incremental aluminizing time showed linear trend of CT at initial stage, thereafter (10 hrs) it leveled off. Whereas it does not affect microstructure of the coating

Analysis of Electrodeposited NiFe Thin Films for the Development of Planar Fluxgate Magnetic Sensors

2007 ◽  
Vol 998 ◽  
Author(s):  
Thais Cavalheri dos Santos ◽  
Marcelo Mulato
Keyword(s):  
Thin Films ◽  
Current Density ◽  
Deposition Time ◽  
Magnetic Sensors ◽  
Hysteresis Cycle ◽  
X Ray Diffraction ◽  
Final Thickness ◽  
Total Deposition ◽  
Current Densities ◽  
Deposited Films

ABSTRACTNife alloys are potential candidates for the development of planar fluxgate magnetic microsensors. In this work, electrodeposition was used to produce NiFe thin films on top of copper substrates. When using this technique the variation of the electric potential, and thus the current density, alters the final stoichiometry of the deposited films, while the final thickness is determined by the total deposition time. We used current densities varying from 4.0 mA/cm2 to 28 mA/cm2, with steps of 4.0 mA/cm2. For each current density, total deposition times of 10, 20, 30 and 40 minutes were used. The morphology was characterized using scanning electron microscopy, structure was characterized using X-ray diffraction experiments, and the composition of the films were determined using energy dispersive spectroscopy. The magnetic properties were investigated evaluating the materials hysteresis cycle. The materials were optimized aiming for lowest coercivity values, and the final result was about 0.215 kA/m.

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