X-Ray and Raman Topographic Studies of Gaas Implanted With 28Si+ and Pulsed Laser Annealed

1989 ◽  
Vol 157 ◽  
Author(s):  
R.C. Bowman ◽  
J.F. Knudsen ◽  
P.M. Adams ◽  
H.D. Yao ◽  
A.D. Compaan
Keyword(s):  
Raman Spectroscopy ◽  
Partial Melting ◽  
Lattice Strain ◽  
Pulsed Laser ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
Dopant Activation ◽  
X Ray ◽  
Incomplete Removal ◽  
Surrounding Areas

ABSTRACTDouble-crystal x-ray diffraction and topography, along with Raman spectroscopy and topography are used to study lattice reconstruction and carrier activation for pulsed laser annealed Si implanted GaAs. Although lattice strain is essentially eliminated, along with the production of carrier concentrations to about 3×1019 cm.3 at the center of laser annealed spots, incomplete removal of implant induced disorder and little dopant activation are observed in surrounding areas. Correlations of Raman and x-ray topographs suggest that concentric regions of partial melting, but without epitaxial regrowth, occur in the periphery of the laser annealed spots.

Effects of Rapid Thermal Anneals on Boron Implanted GaAs

1988 ◽  
Vol 144 ◽  
Author(s):  
R. C. Bowman ◽  
P. M. Adams ◽  
M. H. Herman ◽  
S. E. Buttrill
Keyword(s):  
Electron Beam ◽  
Raman Scattering ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Lattice Strain ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
X Ray ◽  
Conventional Furnace

ABSTRACTRaman scattering, double-crystal x-ray diffraction, and electron beam electroreflectance have been used to assess the damage produced in undoped (100)-GaAs by boron ion implants and the influence of post-implant anneals. Both conventional furnace and rapid thermal annealing treatments were found to remove much of the lattice strain created by the implants. However, considerable disorder also remains after these anneals.

LiCoO2 Thin Films Grown by Pulsed Laser Deposition on Low Cost Substrates

1997 ◽  
Vol 496 ◽  
Author(s):  
D. S. Ginley ◽  
J. D. Perkins ◽  
J. M. McGraw ◽  
P. A. Parilla ◽  
M.L. Fu ◽  
...  
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Stainless Steel ◽  
Low Cost ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
X Ray ◽  
Similar Texture ◽  
Dense Films

AbstractWe report on the use of pulsed laser depositon (PLD) to grow thin films of LiCoO2 on a number of low cost substrates including SnO2 coated Upilex, stainless steel and SnO2 coated glass. Highly textured (001) films grown on CVD deposited SnO2 films on 7059 glass, were obtained at 200 to 500 mTorr O2 and a temperature of 500 C. Similar texture was not obtained on the stainless or Upilex however dense films from crystalline to amorphous were obtained. The films were characterized by x-ray diffraction and Raman spectroscopy.

Lattice Strain from Holes in Heavily Doped Si:Ga

1989 ◽  
Vol 147 ◽  
Author(s):  
K. L. Kavanagh ◽  
G. S. Cargill ◽  
R. F. Boehme ◽  
J. C. P. Chang
Keyword(s):  
Experimental Error ◽  
Laser Annealing ◽  
Lattice Strain ◽  
Nearest Neighbor ◽  
X Ray Diffraction ◽  
Lattice Contraction ◽  
Double Crystal ◽  
X Ray ◽  
Heavily Doped ◽  
X Ray Absorption

AbstractHeavily doped Si:Ga has been prepared by liquid phase epitaxy (LPE) and by ionimplantation with rapid thermal annealing (RTA) or laser annealing (LA). Peak substitutional Ga concentrations obtained by each technique were 1.5, 2.5 and 2.9 ×1020cm-3, respectively. Substitutional fractions (>90%) were similar in the three types of samples, and the conductivity scaled with the total Ga concentration. A lattice expansion per substitutional Ga atom in Si of +0.9 ± 0. l×10-24cm3 /atom was measured by double crystal x-ray diffraction. The average nearest neighbor Si-Ga bond length measured with extended x-ray absorption fine structure (EXAFS) was 0.237 ± 0.004 nm, indistinguishable, to within experimental error, from the intrinsic Si-Si bond lngth, 0.235 nm. Combining these two results the lattice strain per hole in the Si valence band was calculated, +0.4 ± 0.8x10G-cm3. This result complements the lattice contraction per electron in the Si conduction band (-1.8 ± 0.4x10-24cm 3) already reported for Si:As [G. S. Cargill III, J. Angilelloand K. L. Kavanagh, Phys. Rev. Letters 61, 1748 (1988)].

Double-Crystal X-ray Diffraction Studies of Si ion-Implanted and Pulsed Laser-Annealed GaAs

1990 ◽  
Vol 34 ◽  
pp. 531-541
Author(s):  
P. M. Adams ◽  
J. F. Knudsen ◽  
R. C. Bowman
Keyword(s):  
Ion Implantation ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Thermal Treatments ◽  
X Ray Diffraction ◽  
Surface Layers ◽  
Double Crystal ◽  
X Ray ◽  
Pulsed Laser Annealing ◽  
Microelectronic Devices

Ion-implantation has many applications in the fabrication and processing of microelectronic devices from semiconductors, but thermal treatments are required to remove defects produced by the implant and to electrically activate dopants. Recently, pulsed laser annealing has been used to activate surface layers of GaAs that have been heavily doped with 28Si+ by ion implantation, and carrier concentrations of > 1 x 1019 cm-3 have been achieved (Ref. 1). Double-crystal x-ray diffraction techniques are very sensitive to strains and defects in single crystals and provide a means for characterizing and quantifying the damage produced by ion-implantation and the subsequent relief of damage by pulsed laser annealing.

scholarly journals A Comparative Analysis of Asymmetric (BaTiO3) 1−xΛ/(BaZrO3)xΛ Superlattices via X-Ray Diffraction and Raman Spectroscopy

2020 ◽  
Vol 2020 ◽  
pp. 1-7
Author(s):  
O. A. Maslova ◽  
Yu. I. Yuzyuk ◽  
S. A. Barannikova
Keyword(s):  
Raman Spectroscopy ◽  
Comparative Analysis ◽  
Pulsed Laser ◽  
Lattice Parameter ◽  
Lattice Dynamic ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
Parameter Mismatch ◽  
X Ray ◽  
Out Of Plane

This work is aimed at studying asymmetric BaTiO31 − xΛ/BaZrO3xΛ ((BT) 1−xΛ/(BZ)xΛ) superlattices, grown by pulsed laser deposition onto (001) MgO substrates. The thicknesses of BT (ferroelectric) and BZ (paraelectric) layers were varied so that х ranged from 0 to 1 at a modulation period Λ of about 80 Å. The films were 400 nm thick. The out-of-plane lattice parameters of constituents were assessed using X-ray diffraction. The lattice dynamic peculiarities of superlattices were probed via Raman spectroscopy; special attention is paid to the analysis of E(1TO) and A1(2TO) ferroelectric soft modes. A comparative analysis of data acquired via both experimental techniques reveals the enhancement of stress between BT and BZ layers with a decrease in symmetry from the tetragonal to a monoclinic phase due to strains induced by the lattice parameter mismatch between the constituents.

Characterization of Gasb-Based Alloy Semiconductors

1990 ◽  
Vol 216 ◽  
Author(s):  
H. Uekita ◽  
N. Kitamura ◽  
M. Ichimura ◽  
A. Usami ◽  
T. Wada
Keyword(s):  
Raman Spectroscopy ◽  
Liquid Phase ◽  
Epitaxial Layer ◽  
Structural Defects ◽  
Epitaxial Layers ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
X Ray ◽  
Alloy Semiconductors

ABSTRACTGaSb, AlxGa1-xSb, and AlxGa1-xSb epitaxial layers were grown by the liquid-phase epitaxy and characterized by photoluminescence, Raman spectroscopy, and double-crystal X-ray diffraction. The concentration of residual acceptors which are related to structural defects decreased with lowering growth temperature, but the GaSb epitaxial layer grown at an extremely low temperature of 270°C had poor crystalline quality. The AlxGa1-xSb (x≥0.15) and AlxGa1-xSb (x=0.02) epitaxial layers grown at 270 °C, however, had much better quality than the GaSb epitaxial layer grown at the same temperature.

Double-Crystal X-Ray Diffraction Studies of Si Ion-Implanted and Pulsed Laser-Annealed GaAs

1991 ◽  
pp. 531-541
Author(s):  
P. M. Adams ◽  
J. F. Knudsen ◽  
R. C. Bowman ◽  
A. D. Compaan ◽  
H. D. Yao
Keyword(s):  
Pulsed Laser ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
X Ray ◽  
Ion Implanted

scholarly journals Каскадные солнечные элементы на основе наногетероструктур GaP/Si/Ge

2019 ◽  
Vol 45 (6) ◽  
pp. 7
Author(s):  
Л.С. Лунин ◽  
М.Л. Лунина ◽  
А.С. Пащенко ◽  
Д.Л. Алфимова ◽  
Д.А. Арустамян ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Energy Band ◽  
External Quantum Efficiency ◽  
Pulsed Laser ◽  
Energy Band Diagram ◽  
Laser Deposition ◽  
Band Diagram ◽  
X Ray Diffraction ◽  
X Ray ◽  
Si Substrates

AbstractGaP/Si/Ge nanoheterostructures have been obtained using the method of pulsed laser deposition, and an energy band diagram of cascade solar cells based on these heterostructures were modeled. GaP and Ge nanolayers grown on Si substrates were studied by Raman spectroscopy and X-ray diffraction. Spectral dependences of the external quantum efficiency response of GaP/Si/Ge nanoheterostructures were determined.

Raman spectroscopy and X-ray diffraction of lithium niobate at temperatures up to 1300○-4.80pt○C

2005 ◽  
Vol 126 ◽  
pp. 101-105 ◽  
Author(s):  
B. Moulin ◽  
L. Hennet ◽  
D. Thiaudière ◽  
P. Melin ◽  
P. Simon
Keyword(s):  
Raman Spectroscopy ◽  
Lithium Niobate ◽  
X Ray Diffraction ◽  
X Ray

scholarly journals Structural and Raman Vibrational Studies ofCeO2-Bi2O3Oxide System

2009 ◽  
Vol 2009 ◽  
pp. 1-4 ◽  
Author(s):  
L. Bourja ◽  
B. Bakiz ◽  
A. Benlhachemi ◽  
M. Ezahri ◽  
J. C. Valmalette ◽  
...  
Keyword(s):  
Solid Solution ◽  
Raman Spectroscopy ◽  
Phase Changes ◽  
Phase System ◽  
X Ray Diffraction ◽  
X Ray ◽  
Vibrational Studies ◽  
Coprecipitation Route

A series of ceramics samples belonging to theCeO2-Bi2O3phase system have been prepared via a coprecipitation route. The crystallized phases were obtained by heating the solid precursors at600∘Cfor 6 hours, then quenching the samples. X-ray diffraction analyses show that forx<0.20a solid solutionCe1−xBixO2−x/2with fluorine structure is formed. For x ranging between 0.25 and 0.7, a tetragonalβ′phase coexisting with the FCC solid solution is observed. For x ranging between 0.8 and 0.9, a new tetragonalβphase appears. Theβ′phase is postulated to be a superstructure of theβphase. Finally, close tox=1, the classical monoclinicα Bi2O3structure is observed. Raman spectroscopy confirms the existence of the phase changes as x varies between 0 and 1.

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