scholarly journals Migration of Carbon in Tempered Martensitic Steel During Excimer Laser Melting

1989 ◽  
Vol 157 ◽  
Author(s):  
J-P. Hirvonen ◽  
T. R. Jervis ◽  
T. G. Zocco

ABSTRACTThe migration of ion implanted 13C in tempered martensitic steel (nominal composition 1.05 wt. % C, 0.2 wt. % Si, and 0.3 wt. % Mn) during excimer laser melting was examined utilizing the resonance of the l3C(p,γ)14N reaction at Ep = 1747.6 keV. Depth concentration profiles after five and ten laser pulses of 1 J/cm2 revealed a deviation from random walk diffusion in a homogeneous media. This was modelled by using partitionless solidification and solubility controlled flow of carbon in the iron-carbon melt. A diffusion length of nm during the period to τ the melted phase was deduced. Ion implanted surfaces were initially crystalline but significant crystalline to amorphous transformation occurred following laser treatment.

1984 ◽  
Vol 52 (3) ◽  
pp. 211-214 ◽  
Author(s):  
Ch.G. Christov ◽  
I.V. Tomov ◽  
I.V. Chaltakov ◽  
V.L. Lyutskanov

1992 ◽  
Vol 285 ◽  
Author(s):  
W.W. Duley ◽  
G. Kinsman

ABSTRACTExcimer laser radiation may be used to process metal surfaces in a variety of novel ways. The simplest of these involves the use of UV laser pulses for ablation. Ablation occurs as the result of both vaporization and hydrodynamical effects. Experimental data related to these processes will be discussed. In addition, it will be shown how specific irradiation regimes can yield metal surfaces with unique radiative properties.


1990 ◽  
Vol 5 (2) ◽  
pp. 265-270 ◽  
Author(s):  
Koji Sugioka ◽  
Hideo Tashiro ◽  
Koichi Toyoda ◽  
Eiichi Tamura ◽  
Keigo Nagasaka

Surface hardening of SUS304 resulting from the process of doping and deposition of Si by irradiation of a KrF excimer laser beam in a SiH4 gas ambient is investigated, and variations of the surface hardness are examined for different numbers of laser pulses and the laser fluences. The hardening is due to Si incorporation in high concentration. The continuous distribution of Si atoms across the surface layer suggests that a very high adhesion strength of the deposited Si films can be formed. The specific process for surface modification is referred to as laser implant-deposition (LID).


2010 ◽  
Vol 108 (1) ◽  
pp. 013508 ◽  
Author(s):  
Taeseok Kim ◽  
Manoj R. Pillai ◽  
Michael J. Aziz ◽  
Michael A. Scarpulla ◽  
Oscar D. Dubon ◽  
...  

2005 ◽  
pp. 279-283 ◽  
Author(s):  
J.-H. Klein-Wiele ◽  
J. Bekesi ◽  
J. Ihlemann ◽  
P. Simon
Keyword(s):  

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