Study of the Anodic Oxidation on Ti and Ta6V (Ti6A14V) by Ion-Implanted Xe Ions Markers and O18 Tracing Techniques

1989 ◽  
Vol 157 ◽  
Author(s):  
Heming Chen ◽  
Mingjiang Dai ◽  
Xinde Bai ◽  
Wangpei Li
Keyword(s):  
Anodic Oxidation ◽  
Film Growth ◽  
Anodic Film ◽  
Ammonium Citrate ◽  
Double Layers ◽  
Transport Numbers ◽  
Metal Interface ◽  
Oxide Interface ◽  
Oxygen Anions ◽  
Tracing Techniques

ABSTRACTThe techniques of single and double layers of implanted Xe ions marker as well as the O18 tracing method are used to study the mechanism of the anodic oxidation of Ti and TA6V (Ti6A14V). It is observed that in 5 wt% ammonium citrate, the mechanism of the anodic oxidation of Ti is very different from that of TA6V. For Ti, new oxide is formed mainly by the migration of Ti cations to the solution/oxide interface and the regions at which new oxide is formed are at the solution/oxide interface and in the pre-oxide near the interface. While for TA6V, anodic film growth is due to the migration of oxygen anions to the oxide/metal interface and the growth regions of new oxide are at the oxide/metal interface and in the pre-oxide near the interface. Transport numbers for Ti oxidized in 1 wt%. KOH are calculated and found to be affected by oxidation temperature, i.e. at 3'C, the average transport number is 0.32, while at 30&00B0;C,it is 0.28. Current efficiencies are above 99.8%. AES spectra show that the distribution profiles of the elements V and Al in anodic film on TA6V are uniform.

A Study of the Anodic Oxidation on Aluminium by Ion-Implanted Xe Ions Marker and RBS Analysis Techniques

1988 ◽  
Vol 128 ◽  
Author(s):  
Hemting Chen ◽  
Xinde Bai ◽  
Wangpei Li ◽  
Mingjiang Dai
Keyword(s):  
Anodic Oxidation ◽  
Anodic Oxide ◽  
Anodic Oxide Film ◽  
Ammonium Citrate ◽  
Transport Numbers ◽  
Oxide Interface ◽  
Analysis Techniques ◽  
Marker Layer ◽  
Oxygen Anions ◽  
Ion Implanted

ABSTRACTThis paper presents the results on the mechanism of the anodic oxidation on Al by means of ion–implanted marker Layer of xenon and RBS analysis techniques. ExperimentaLly, it has been shown that the mechanisms of anoulic oxidation on Al are different in the different elctrolytes. In the solution of 15%.wt sulphuric-acid, the anodic oxide film is formed by the react ion be tweeit metal rations at the metal/oxide interface and continuously migrated oxygen anions. While in the solution of 5%wt ammonium citrate, both tie migration of the metal cations and that of the oxygen anions contribute to the formation of the anodic flim, and the oxidization takes place in internal region of the oxide ftim or at lhe interface. The transport numbers for Al in 5%.wt ammonium citrate were found to vary with the voltage or current density front 44% to 64∼

scholarly journals Anodic Oxidation of Aluminium and Aluminium Alloys. Barrier-Type Anodic Film Growth.

Hyomen Kagaku ◽  
1998 ◽  
Vol 19 (12) ◽  
pp. 772-780 ◽  
Author(s):  
Hiroki HABAZAKI ◽  
Kenichi SHIMIZU ◽  
Peter SKELDON ◽  
George E. THOMPSON ◽  
Graham C. WOOD
Keyword(s):  
Anodic Oxidation ◽  
Aluminium Alloys ◽  
Film Growth ◽  
Anodic Film ◽  
Barrier Type

KINETICS OF THIN OXIDE FILM GROWTH ON METAL CRYSTALS

2000 ◽  
Vol 07 (01n02) ◽  
pp. 135-139 ◽  
Author(s):  
V. P. ZHDANOV ◽  
P. R. NORTON
Keyword(s):  
Oxide Film ◽  
Metal Oxide ◽  
Metal Ions ◽  
Film Growth ◽  
Phase Interface ◽  
Oxide Interface ◽  
Thin Oxide Film ◽  
Thin Oxide Films ◽  
Thin Oxide ◽  
Kinetics Of

A seminal model describing the kinetics of growth of thin oxide films on metal crystals was proposed by Cabrera and Mott (CM). The model is based on the assumption that the growth is limited by the field-facilitated activated jumps of metal ions located in steps on the metal–oxide interface. We generalize the CM model by (i) exploring the interplay of jumps of metal ions from the step and terrace sites at the metal–oxide interface, and (ii) scrutinizing the processes at the oxide–gas-phase interface. The former factor is found to change the physical meaning of the parameters in the CM growth law. The latter factor results in modification of the growth law. In particular, the oxidation kinetics becomes dependent on the O2 pressure. More specifically, the oxidation rate is predicted to increase with increasing pressure. This effect is, however, rather weak and becomes progressively weaker with increasing oxide film thickness.

A flow model of porous anodic film growth on aluminium

2006 ◽  
Vol 52 (2) ◽  
pp. 681-687 ◽  
Author(s):  
S.J. Garcia-Vergara ◽  
P. Skeldon ◽  
G.E. Thompson ◽  
H. Habazaki
Keyword(s):  
Flow Model ◽  
Film Growth ◽  
Anodic Film

EQCM Study of Anodic Film Growth on Valve Metals

2004 ◽  
Vol 151 (12) ◽  
pp. B652 ◽  
Author(s):  
C.-O. A. Olsson ◽  
M.-G. Vergé ◽  
D. Landolt
Keyword(s):  
Film Growth ◽  
Anodic Film ◽  
Valve Metals

Porous anodic film growth on beryllium in NaOH electrolyte

2016 ◽  
Vol 107 ◽  
pp. 21-30 ◽  
Author(s):  
Shixiong He ◽  
Hong Ye ◽  
Yanlong Ma ◽  
Liang Guo ◽  
Yingning Gou ◽  
...  
Keyword(s):  
Film Growth ◽  
Anodic Film

Study of Anodic Film Growth on GaAs and Bi2Te3byin situPhotoacoustic Technique

1981 ◽  
Vol 20 (8) ◽  
pp. 1423-1428 ◽  
Author(s):  
Chouho Yamagishi ◽  
Akihiro Moritani ◽  
Junkichi Nakai
Keyword(s):  
Film Growth ◽  
Anodic Film

Anodic film growth on Al layers and Ta–Al metal bilayers in citric acid electrolytes

2005 ◽  
Vol 50 (25-26) ◽  
pp. 5065-5075 ◽  
Author(s):  
A. Mozalev ◽  
I. Mozaleva ◽  
M. Sakairi ◽  
H. Takahashi
Keyword(s):  
Citric Acid ◽  
Film Growth ◽  
Anodic Film ◽  
Metal Bilayers
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