scholarly journals Photoemission Spectroscopy of Single Crystal HTSC Materials: A Fermi Liquid Electronic Structure

1989 ◽  
Vol 156 ◽  
Author(s):  
A. J. Arko ◽  
R. S. List ◽  
R. J. Bartlett ◽  
S. W. Cheong ◽  
C. G. Olson ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Band Structure ◽  
Single Crystal ◽  
Fermi Liquid ◽  
Wide Band ◽  
Photoemission Spectroscopy ◽  
Correlation Effects ◽  
Band Dispersion ◽  
Valence Bands ◽  
Orbital Character

ABSTRACTPhotoemission spectra from HTSC materials ( primarily 123 -type ), cleaved and measured at 20K, reveal a rich DOS structure which compares favorably with a calculated band structure, except for a residual 0.5 eV shift which may reflect some correlation effects. Band dispersion is observed throughout the valence bands, with clear evidence for a 0.2 eV wide band dispersing through EF. The orbital character at EF is a mix of Cu-3d and O-2p. There is unambiguous evidence for a large BCS-like gap (2Δ≥ 4kTc).

Band structure investigation of chalcopyrite CuInSe2(001) by angle-resolved photoelectron spectroscopy

2005 ◽  
Vol 865 ◽  
Author(s):  
Ralf Hunger ◽  
Christian Pettenkofer
Keyword(s):  
Electronic Structure ◽  
Band Structure ◽  
Valence Band ◽  
Photoelectron Spectroscopy ◽  
Bulk Composition ◽  
Synchrotron Source ◽  
Band Dispersion ◽  
Low Energy Electron ◽  
Copper Chalcopyrite ◽  
Valence Bands

AbstractClean and ordered chalcopyrite CuInSe2 surfaces are a precondition for the study of the electronic structure by angle-resolved photoelectron spectroscopy. The preparation of welldefined CuInSe2(001) surfaces by the combination of molecular beam epitaxy and a selenium capping and decapping process is described. The surface structure of CuInSe2 epilayers with different bulk composition is compared and analysed by low-energy electron diffraction.Employing near-stoichiometric surfaces, the valence electronic structure of CuInSe2 was investigated by angle-resolved photoelectron spectroscopy at the synchrotron source BESSY 2. This is the first study of the valence band structure of a copper chalcopyrite semiconductor material by photoelectron spectroscopy. The valence band dispersion along τT, i.e. the [001] direction, was investigated by a variation of the excitation energy from 10 to 35 eV under normal emission, and the band dispersion along τT, i.e. the [110] direction, was analysed by angular scans with hv = 13 eV.The valence bands derived from antibonding and bonding Se4p-Cu3d hybrid orbitals, nonbonding Cu3d states and In-Se hybrid states are clearly indentified. The strongest dispersion is found for the topmost valence band with a bandwidth of ∼0.7 eV from τ to T. From τ to N, the observed dispersion was 0.5 eV. The experimental valence bands are discussed in relation to calculated band structures in the literature.

Electronic structure ofNaxCu1−xIn5S8compounds: X-ray photoemission spectroscopy study and band structure calculations

2008 ◽  
Vol 78 (23) ◽  
Author(s):  
Catherine Guillot-Deudon ◽  
Sylvie Harel ◽  
Arezki Mokrani ◽  
Alain Lafond ◽  
Nicolas Barreau ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Band Structure ◽  
Photoemission Spectroscopy ◽  
Spectroscopy Study ◽  
X Ray ◽  
Band Structure Calculations ◽  
Structure Calculations

SUPERSTRUCTURE FORMATION AND X-RAY PHOTOEMISSION PROPERTIES OF THE TlTiOPO4 SURFACE

2004 ◽  
Vol 11 (02) ◽  
pp. 191-198 ◽  
Author(s):  
V. V. ATUCHIN ◽  
L. D. POKROVSKY ◽  
V. G. KESLER ◽  
N. YU. MAKLAKOVA ◽  
V. I. VORONKOVA ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Binding Energy ◽  
Electron Diffraction ◽  
Band Structure ◽  
High Energy ◽  
Photoemission Spectroscopy ◽  
High Energy Electron ◽  
Valence Band Structure ◽  
X Ray ◽  
Core Level Binding Energy

X-ray photoemission spectroscopy (XPS) measurements have been executed for TlTiOPO 4 to elucidate the general features in the electronic structure of the KTiOPO 4 family compounds. The peculiarities of the valence band structure have been discussed for the crystals. The persistence of core level binding energy differences O 1s–P 2p and O 1s–Ti 2p 3/2 has been detected in TlTiOPO 4 and KTiOPO 4, which relates well with the constancy of averaged P – O and Ti – O chemical bond lengths in this crystal family. The superstructure ordering of the TlTiOPO 4 surface subjected to polishing and annealing has been detected by reflectance high energy electron diffraction (RHEED). From comparison of surface crystallographic properties of TlTiOPO 4 and KTiOPO 4, the most typical superstructure indices have been revealed.

scholarly journals Direct time-domain observation of attosecond final-state lifetimes in photoemission from solids

Science ◽  
2016 ◽  
Vol 353 (6294) ◽  
pp. 62-67 ◽  
Author(s):  
Zhensheng Tao ◽  
Cong Chen ◽  
Tibor Szilvási ◽  
Mark Keller ◽  
Manos Mavrikakis ◽  
...  
Keyword(s):  
Band Structure ◽  
Strong Dependence ◽  
Emission Angle ◽  
Spectroscopic Techniques ◽  
Final State ◽  
Band Dispersion ◽  
Electron Escape ◽  
State Band ◽  
The Difference ◽  
Valence Bands

Attosecond spectroscopic techniques have made it possible to measure differences in transport times for photoelectrons from localized core levels and delocalized valence bands in solids. We report the application of attosecond pulse trains to directly and unambiguously measure the difference in lifetimes between photoelectrons born into free electron–like states and those excited into unoccupied excited states in the band structure of nickel (111). An enormous increase in lifetime of 212 ± 30 attoseconds occurs when the final state coincides with a short-lived excited state. Moreover, a strong dependence of this lifetime on emission angle is directly related to the final-state band dispersion as a function of electron transverse momentum. This finding underscores the importance of the material band structure in determining photoelectron lifetimes and corresponding electron escape depths.

scholarly journals Constructing the Electronic Structure of CH3NH3PbI3 and CH3NH3PbBr3 Perovskite Thin Films from Single-Crystal Band Structure Measurements

2019 ◽  
Vol 10 (3) ◽  
pp. 601-609 ◽  
Author(s):  
Fengshuo Zu ◽  
Patrick Amsalem ◽  
David A. Egger ◽  
Rongbin Wang ◽  
Christian M. Wolff ◽  
...  
Keyword(s):  
Thin Films ◽  
Electronic Structure ◽  
Band Structure ◽  
Single Crystal

scholarly journals Valence band dispersion measurements of perovskite single crystals using angle-resolved photoemission spectroscopy

2017 ◽  
Vol 19 (7) ◽  
pp. 5361-5365 ◽  
Author(s):  
Congcong Wang ◽  
Benjamin R. Ecker ◽  
Haotong Wei ◽  
Jinsong Huang ◽  
Jian-Qiao Meng ◽  
...  
Keyword(s):  
Band Structure ◽  
Single Crystals ◽  
Valence Band ◽  
Photoemission Spectroscopy ◽  
Angle Resolved Photoemission Spectroscopy ◽  
Band Dispersion

The ARPES study of perovskite single crystals revealed the band structure along theΓXandΓMdirections.

Orbitals and bands at metal surfaces: photoemission from the {110} surface of tungsten

1981 ◽  
Vol 376 (1767) ◽  
pp. 565-583 ◽  
Keyword(s):  
Electronic Structure ◽  
Band Structure ◽  
Surface State ◽  
Photon Emission ◽  
Tight Binding ◽  
Tight Binding Approximation ◽  
The Third ◽  
Surface Brillouin Zone ◽  
Orbital Character ◽  
Bulk Band

The electronic structure of the {110} surface of tungsten has been investigated by using angle-resolved photoemission. A surface state has been identified and characterized throughout the surface Brillouin zone (s. B. z.). Its dispersion is found to correlate with the projected band gap between the third and fourth bands of the tungsten bulk band structure. It is identified by comparison with Inglesfield’s calculation as having predominantly m = 1 d-orbital character. With photon energies of 21.2 and 40.8 eV, intense photoemission from the surface state is only observed after surface Umklapp, whereas, with 16.8 eV, photon emission is observed in both the first and second s. B. zs. The applicability of the tight-binding approximation to the elucidation of the electronic structure of a metal surface is examined with particular reference to this surface state. A qualitative analysis of the observed photoemission intensities is consistent with emission from a tungsten e g orbital that is hybridized with e g orbitals on neighbouring atoms.

Electronic Properties of Thin PD Overlayers on Au(111): Relationship to Chemisorption Properties

1985 ◽  
Vol 47 ◽  
Author(s):  
Xinyin Shena ◽  
D. J. Frankel ◽  
J. Hermanson ◽  
G. J. Lapeyre ◽  
R. J. Smith
Keyword(s):  
Electronic Structure ◽  
Single Crystal ◽  
Electronic Properties ◽  
Fermi Energy ◽  
Chemical Properties ◽  
Multilayer Films ◽  
State Density ◽  
Photoemission Spectroscopy ◽  
Co Chemisorption ◽  
And Chemical Properties

ABSTRACTWe present results for the electronic structure and chemical properties of thin Pd films grown epitaxially on Au(lll) single-crystal substrates. Photoemission spectroscopy is used to monitor the development of the Pd d-bands near the Fermi energy (EF ) as a function of overlayer thickness. The state density aF E is relatively small for the single Pd monolayer (ML), but increases monotonically with overlayer thickness, resembling the bulk Pd electronic structure for films thicker than 5 ML. At the same time we observe that the 1 ML Pd film is iner with respect to CO chemisorption, while the multilayer films readily chemisorb CO, similar to bulk Pd. We examine possible models for the inert behavior of the Pd monolayer, based on related slab calculations which show the substrate-induced modification of the electronic structure in the overlayer.

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