scholarly journals Constructing the Electronic Structure of CH3NH3PbI3 and CH3NH3PbBr3 Perovskite Thin Films from Single-Crystal Band Structure Measurements

2019 ◽  
Vol 10 (3) ◽  
pp. 601-609 ◽  
Author(s):  
Fengshuo Zu ◽  
Patrick Amsalem ◽  
David A. Egger ◽  
Rongbin Wang ◽  
Christian M. Wolff ◽  
...  
Keyword(s):  
Thin Films ◽  
Electronic Structure ◽  
Band Structure ◽  
Single Crystal

scholarly journals Photoemission Spectroscopy of Single Crystal HTSC Materials: A Fermi Liquid Electronic Structure

1989 ◽  
Vol 156 ◽  
Author(s):  
A. J. Arko ◽  
R. S. List ◽  
R. J. Bartlett ◽  
S. W. Cheong ◽  
C. G. Olson ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Band Structure ◽  
Single Crystal ◽  
Fermi Liquid ◽  
Wide Band ◽  
Photoemission Spectroscopy ◽  
Correlation Effects ◽  
Band Dispersion ◽  
Valence Bands ◽  
Orbital Character

ABSTRACTPhotoemission spectra from HTSC materials ( primarily 123 -type ), cleaved and measured at 20K, reveal a rich DOS structure which compares favorably with a calculated band structure, except for a residual 0.5 eV shift which may reflect some correlation effects. Band dispersion is observed throughout the valence bands, with clear evidence for a 0.2 eV wide band dispersing through EF. The orbital character at EF is a mix of Cu-3d and O-2p. There is unambiguous evidence for a large BCS-like gap (2Δ≥ 4kTc).

Atomic and electronic structure transformations in SnS2 at high pressures: a joint single crystal X-ray diffraction and DFT study

2016 ◽  
Vol 45 (9) ◽  
pp. 3798-3805 ◽  
Author(s):  
M. Ø. Filsø ◽  
E. Eikeland ◽  
J. Zhang ◽  
S. R. Madsen ◽  
B. B. Iversen
Keyword(s):  
Electronic Structure ◽  
Band Structure ◽  
Single Crystal ◽  
High Pressures ◽  
Color Change ◽  
X Ray Diffraction ◽  
X Ray ◽  
Band Structure Calculations ◽  
Structure Calculations ◽  
Atomic And Electronic Structure

SnS2 is observed to have a layer compressibility similar to that of graphite, and a reversible color change with pressure is explained from band structure calculations.

Single Crystal, High Band Gap CdS Thin Films Grown by RF Magnetron Sputtering in Argon Atmosphere for Solar Cell Applications

2018 ◽  
Vol 10 (3) ◽  
pp. 03005-1-03005-6 ◽  
Author(s):  
Rupali Kulkarni ◽  
◽  
Amit Pawbake ◽  
Ravindra Waykar ◽  
Ashok Jadhawar ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Magnetron Sputtering ◽  
Single Crystal ◽  
Band Gap ◽  
Rf Magnetron Sputtering ◽  
Argon Atmosphere ◽  
Cds Thin Films ◽  
High Band

Single crystal-like thin films of blue bronze

2021 ◽  
pp. 138745
Author(s):  
Damir Dominko ◽  
Damir Starešinić ◽  
Katica Biljaković ◽  
Maja Đekić ◽  
Amra Salčinović Fetić ◽  
...  
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Blue Bronze

Perovskite (PEA)2Pb(I1-xBrx)4 single crystal thin films for improving optoelectronic performances

2021 ◽  
Vol 117 ◽  
pp. 111074
Author(s):  
Xinyi Zhang ◽  
Di Zhao ◽  
Ziye Huo ◽  
Jun Sun ◽  
Yufeng Hu ◽  
...  
Keyword(s):  
Thin Films ◽  
Single Crystal

scholarly journals Tuning the Electrical Properties of NiO Thin Films by Stoichiometry and Microstructure

Coatings ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 697
Author(s):  
Yu-He Liu ◽  
Xiao-Yan Liu ◽  
Hui Sun ◽  
Bo Dai ◽  
Peng Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Energy Loss ◽  
Single Crystal ◽  
Oxygen Stoichiometry ◽  
High Resistivity ◽  
Edge Structure ◽  
Glass Substrates ◽  
Lower Resistivity

Here, the electrical properties of NiO thin films grown on glass and Al2O3 (0001) substrates have been investigated. It was found that the resistivity of NiO thin films strongly depends on oxygen stoichiometry. Nearly perfect stoichiometry yields extremely high resistivity. In contrast, off-stoichiometric thin films possess much lower resistivity, especially for oxygen-rich composition. A side-by-side comparison of energy loss near the edge structure spectra of Ni L3 edges between our NiO thin films and other theoretical spectra rules out the existence of Ni3+ in NiO thin films, which contradicts the traditional hypothesis. In addition, epitaxial NiO thin films grown on Al2O3 (0001) single crystal substrates exhibit much higher resistivity than those on glass substrates, even if they are deposited simultaneously. This feature indicates the microstructure dependence of electrical properties.

Microstructure and enhanced in-plane ferroelectricity of Ba0.7Sr0.3TiO3 thin films grown on MgAl2O4 (001) single-crystal substrate

2006 ◽  
Vol 89 (23) ◽  
pp. 232906 ◽  
Author(s):  
X. Y. Zhou ◽  
T. Heindl ◽  
G. K. H. Pang ◽  
J. Miao ◽  
R. K. Zheng ◽  
...  
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Single Crystal Substrate ◽  
Crystal Substrate
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