Fe-Ag Superlattices by Molecular Beam Epitaxy

1989 ◽  
Vol 151 ◽  
Author(s):  
S. H. Mayer ◽  
C. J. Gutierrez ◽  
J. C. Walker
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
High Energy ◽  
Squid Magnetometry ◽  
High Energy Electron ◽  
Hyperfine Fields ◽  
Iron Films ◽  
Linear Behavior ◽  
Growth System ◽  
Effusion Rates

ABSTRACTWe have succeeded in producing high quality (110)Fe/(111)Ag superlattices by Molecular Beam Epitaxy. Important parameters in the production of these materials were substrate temperature and effusion rates of the constituents. We have used SQUID magnetometry, Mössbauer spectroscopy and Reflection High Energy Electron Diffraction to demonstrate flatness and continuity of the films down to a thickness of approximately 2 atomic layers for the iron and 5 atomic layers for the silver. In the case of the thinnest iron layers, no large reduction of the ferromagnetic Curie temperature was observed, although this had been suggested and reported by other investigators. Furthermore, there was no indication for this particular growth system that the magnetization of the iron was out of the plane of the film. Variations of the magnetic hyperfine fields observed in the iron films were seen both as a function of iron thickness and as a function of the thickness of the intervening silver layers. For the thinnest films, the temperature dependence of the magnetization showed a linear behavior rather than the traditional T3/2 form.

Reflection High Energy Electron Diffraction Intensity Oscillations during the Growth of ZnSe on Cleaved GaAs(110) Surface by Molecular Beam Epitaxy

1996 ◽  
Vol 35 (Part 2, No. 3B) ◽  
pp. L366-L369 ◽  
Author(s):  
Hyun-Chul Ko ◽  
Shigeo Yamaguchi ◽  
Hitoshi Kurusu ◽  
Yoichi Kawakami ◽  
Shizuo Fujita ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Electron Diffraction ◽  
Molecular Beam ◽  
High Energy ◽  
Energy Electron ◽  
High Energy Electron ◽  
Diffraction Intensity

Reflection High-Energy-Electron Diffraction Study of Inp and InAs (100) In Gas-Source Molecular Beam Epitaxy

1990 ◽  
Vol 216 ◽  
Author(s):  
T. P. Chin ◽  
B. W. Liang ◽  
H. Q. Hou ◽  
C. W. Tu
Keyword(s):  
Molecular Beam Epitaxy ◽  
Electron Diffraction ◽  
Molecular Beam ◽  
Electron Diffraction Study ◽  
High Energy ◽  
Energy Electron ◽  
High Energy Electron ◽  
Group V ◽  
Precise Control ◽  
Gas Source

ABSTRACTInP and InAs (100) were grown by gas-source molecular-beam epitaxy (GSMBE) with arsine, phosphine, and elemental indium. Reflection high-energy-electron diffraction (RHEED) was used to monitor surface reconstructions and growth rates. (2×4) to (2×1) transition was observed on InP (100) as phosphine flow rate increased. (4×2) and (2×4) patterns were observed for In-stabilized and As-stabilized InAs surfaces, respectively. Both group-V and group-rn-induced RHEED oscillations were observed. The group-V surface desorption activation energy were measured to be 0.61 eV for InP and 0.19 eV for InAs. By this growth rate study, we are able to establish a precise control of V/HII atomic ratios in GSMBE of InP and InAs.

Reflection High Energy Electron Diffraction and Atomic Force Microscopy Studies of MnxSc(1-x) Alloys Grown on MgO(001) Substrates by Molecular Beam Epitaxy

2011 ◽  
Vol 1295 ◽  
Author(s):  
Costel Constantin ◽  
Abhijit Chinchore ◽  
Arthur R. Smith
Keyword(s):  
Atomic Force Microscopy ◽  
Molecular Beam Epitaxy ◽  
Electron Diffraction ◽  
Molecular Beam ◽  
High Energy ◽  
Energy Electron ◽  
High Energy Electron ◽  
Force Microscopy ◽  
Atomic Force ◽  
Growth Method

ABSTRACTThe combination of the molecular beam epitaxy growth method with the in-situ reflection high energy electron diffraction measurements currently offers unprecedented control of crystalline growth materials. We present here a stoichiometric study of MnxSc(1-x) [x = 0, 0.03, 0.05, 0.15, 0.25, 0.35, and 0.50] thin films grown on MgO(001) substrates with this growth method. Reflection high energy electron diffraction and atomic force microscopy measurements reveal alloy behavior for all of our samples. In addition, we found that samples Mn0.10Sc0.90 and Mn0.50Sc0.50 display surface self-assembled nanowires with a length/width ratio of ~ 800 – 2000.

Variations in Magnetic Hyperfine fields for Thin Epitaxial Heterostructures Of (110)Fe ON (111)Ag

1989 ◽  
Vol 151 ◽  
Author(s):  
C. J. Gutierrez ◽  
S. H. Mayer ◽  
Z. Q. Qiu ◽  
H. Tang ◽  
J. C. Walker
Keyword(s):  
Electron Diffraction ◽  
Epitaxial Growth ◽  
Growth Process ◽  
High Energy ◽  
Thin Layers ◽  
High Energy Electron ◽  
Hyperfine Fields ◽  
Iron Films ◽  
Magnetic Heterostructures ◽  
Epitaxial Heterostructures

ABSTRACTWe have made a study of magnetic heterostructures involving the epitaxial growth of (110)Fe on (111)Ag. The flatness and continuity of the films was verified by Reflection High Energy Electron Diffraction during the growth process. A series of structures were made with very thin intervening silver layers with thicker iron layers. The doping of appropriate layers by enriched Fe57 made it possible to examine the magnetic structure of the iron films as a function of depth. Preliminary results indicate that thin layers of silver sandwiched between two very thin Fe layers are able to transmit conduction electron polarization, resulting in iron behavior which resembles that of bulk iron. Implications of these results for understanding the nature of the magnetization of iron will be addressed in the following.

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