The Relationship between Deposition Conditions, Microstructure and Properties of Re-Tm Thin Films

1989 ◽  
Vol 150 ◽  
Author(s):  
J-W. Lee ◽  
S-C. N. Cheng ◽  
M. H. Kryder ◽  
D. E. Laughlin
Keyword(s):  
Thin Films ◽  
Microstructure And Properties ◽  
The Relationship ◽  
Deposition Conditions

Preparation and Morphology of CdZnS Thin Films

2019 ◽  
Vol 18 (03n04) ◽  
pp. 1940060
Author(s):  
S. I. Sadovnikov
Keyword(s):  
Thin Films ◽  
Text Structure ◽  
Layer By Layer ◽  
Space Group ◽  
Synthesis Conditions ◽  
Layer Deposition ◽  
Two Phases ◽  
The Relationship ◽  
Selection Of ◽  
Deposition Conditions

Thin films based on limited solid solutions of cadmium and zinc sulfides have been synthesized by a one-stage epitaxial layer-by-layer deposition from an ammonium-containing aqueous solution of cadmium and zinc chlorides and thiocarbamide on a glass substrate. The thickness control of sulfide layers was carried out by selection of reagent concentrations and the deposition conditions. The relationship between the synthesis conditions of CdxZn[Formula: see text]S thin films and the size of sulfide nanoparticles in these films is established. The films contain two phases: hexagonal (space group [Formula: see text]) phase with [Formula: see text] structure of wurtzite type and cubic (space group [Formula: see text]-[Formula: see text]) phase with [Formula: see text] structure of sphalerite type. It is shown that the CdxZn[Formula: see text]S film consists of separate [Formula: see text][Formula: see text]nm agglomerates which are a collection of smaller nanometer-sized particles. The dependence of the band gap of the synthesized films on their thickness is found.

The relationship between deposition conditions, the beta to alpha phase transformation, and stress relaxation in tantalum thin films

1992 ◽  
Vol 72 (10) ◽  
pp. 4918-4924 ◽  
Author(s):  
L. A. Clevenger ◽  
A. Mutscheller ◽  
J. M. E. Harper ◽  
C. Cabral ◽  
K. Barmak
Keyword(s):  
Thin Films ◽  
Phase Transformation ◽  
Stress Relaxation ◽  
Alpha Phase ◽  
The Relationship ◽  
Deposition Conditions

Precision Teng-Man Electro-Optic Measurements Using Highly Near-Infrared Transparent Electrodes

2006 ◽  
Vol 928 ◽  
Author(s):  
Lian Wang ◽  
Yu Yang ◽  
Zhifu Liu ◽  
Tobin J. Marks ◽  
Seng-Tiong Ho
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Measurement Accuracy ◽  
Near Infrared ◽  
Film Deposition ◽  
Transparent Electrodes ◽  
Electro Optic ◽  
First Time ◽  
The Relationship ◽  
Deposition Conditions

AbstractA series of highly near-infrared (NIR) transparent In2O3 thin films has been grown by ion-assisted deposition (IAD) at room temperature, and their optical and electrical properties characterized. The NIR transparency and the plasma edge can be engineered through control of the film deposition conditions. The as-deposited In2O3 thin films were employed as transparent electrodes for direct electro-optic (EO) characterization measurements via the Teng-Man technique. Using LiNbO3 as the standard, the relationship between the degree of electrode NIR transparency and Teng-Man EO measurement accuracy was evaluated. It is found that In2O3 electrodes can be tailored to be highly NIR transparent, thus providing more accurate Teng-Man EO coefficient quantification than ITO (tin-doped indium oxide). In addition, the EO coefficients of stilbazolium-based self-assembled superlattice (SAS) thin films were directly determined for the first time by the Teng-Man technique using an optimized In2O3 electrode. EO coefficients r33 of 42.2, 13.1, and 6.4 pm/V are obtained at 633, 1064, and 1310 nm, respectively.

scholarly journals Fabrication of Transparent Mg(OH)2 Thin Films by Drop-Dry Deposition

Materials ◽  
2021 ◽  
Vol 14 (4) ◽  
pp. 724
Author(s):  
Tong Li ◽  
Masaya Ichimura
Keyword(s):  
Thin Films ◽  
Aqueous Solution ◽  
Optical Properties ◽  
Surface Morphology ◽  
Magnesium Hydroxide ◽  
Dry Deposition ◽  
Visible Range ◽  
Substrate Heating ◽  
Water Effects ◽  
Deposition Conditions

Magnesium hydroxide (Mg(OH)2) thin films were deposited by the drop-dry deposition (DDD) method using an aqueous solution containing Mg(NO3)2 and NaOH. DDD was performed by dropping the solution on a substrate, heating-drying, and rinsing in water. Effects of different deposition conditions on the surface morphology and optical properties of Mg(OH)2 thin films were researched. Films with a thickness of 1−2 μm were successfully deposited, and the Raman peaks of Mg(OH)2 were observed for them. Their transmittance in the visible range was 95% or more, and the bandgap was about 5.8 eV. It was found that the thin films have resistivity of the order of 105 Ωcm. Thus, the transparent and semiconducting Mg(OH)2 thin films were successfully prepared by DDD.

Processing by Pulsed Laser Deposition and Structural, Morphological and Chemical Characterization of Bi-Pb-Sr-Ca-Cu-O and Bi-Pb-Sb-Sr-Ca-Cu-O Thin Films

2010 ◽  
Vol 75 ◽  
pp. 202-207
Author(s):  
Victor Ríos ◽  
Elvia Díaz-Valdés ◽  
Jorge Ricardo Aguilar ◽  
T.G. Kryshtab ◽  
Ciro Falcony
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Chemical Characterization ◽  
Laser Deposition ◽  
Nominal Composition ◽  
Deposition Parameters ◽  
The Relationship

Bi-Pb-Sr-Ca-Cu-O (BPSCCO) and Bi-Pb-Sb-Sr-Ca-Cu-O (BPSSCCO) thin films were grown on MgO single crystal substrates by pulsed laser deposition. The deposition was carried out at room temperature during 90 minutes. A Nd:YAG excimer laser ( = 355 nm) with a 2 J/pulse energy density operated at 30 Hz was used. The distance between the target and substrate was kept constant at 4,5 cm. Nominal composition of the targets was Bi1,6Pb0,4Sr2Ca2Cu3O and Bi1,6Pb0,4Sb0,1Sr2Ca2Cu3OSuperconducting targets were prepared following a state solid reaction. As-grown films were annealed at different conditions. As-grown and annealed films were characterized by XRD, FTIR, and SEM. The films were prepared applying an experimental design. The relationship among deposition parameters and their effect on the formation of superconducting Bi-system crystalline phases was studied.

scholarly journals On the relationship of magnetocrystalline anisotropy and stoichiometry in epitaxial L10 CoPt (001) and FePt (001) thin films

2005 ◽  
Vol 98 (3) ◽  
pp. 033904 ◽  
Author(s):  
K. Barmak ◽  
J. Kim ◽  
L. H. Lewis ◽  
K. R. Coffey ◽  
M. F. Toney ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetocrystalline Anisotropy ◽  
Relationship Of ◽  
The Relationship

The Materials Science of “Permeable Polysilicon” Thin Films

2001 ◽  
Vol 687 ◽  
Author(s):  
George M Dougherty ◽  
Timothy Sands ◽  
Albert P. Pisano
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Materials Science ◽  
Single Step ◽  
Process Window ◽  
Silicon Thin Films ◽  
Growth Regime ◽  
Deposition Parameters ◽  
Simple Kinetic Model ◽  
The Relationship

AbstractPolycrystalline silicon thin films that are permeable to fluids, known as permeable polysilicon, have been reported by several researchers. Such films have great potential for the fabrication of difficult to make MEMS structures, but their use has been hampered by poor process repeatability and a lack of physical understanding of the origin of film permeability and how to control it. We have completed a methodical study of the relationship between process, microstructure, and properties for permeable polysilicon thin films. As a result, we have determined that the film permeability is caused by the presence of nanoscale pores, ranging from 10-50 nm in size, that form spontaneously during LPCVD deposition within a narrow process window. The unusual microstructure within this process window corresponds to the transition between a semicrystalline growth regime, exhibiting tensile residual stress, and a columnar growth regime exhibiting compressive residual stress. A simple kinetic model is proposed to explain the unusual morphology within this transition regime. It is determined that measurements of the film residual stress can be used to tune the deposition parameters to repeatably produce permeable films for applications. The result is a convenient, single-step process that enables the elegant fabrication of many previously challenging structures.

Microstructure Evolution of Epitaxial (Ba, Sr) TiO3/ (001) HgO Thin Films

1994 ◽  
Vol 361 ◽  
Author(s):  
V.A. Alyoshin ◽  
E.V. Sviridov ◽  
V.I.M. Hukhortov ◽  
I.H. Zakharchenko ◽  
V.P. Dudkevich
Keyword(s):  
Thin Films ◽  
Cross Section ◽  
Microstructure Evolution ◽  
Three Dimensional ◽  
Gas Pressure ◽  
Smooth Surfaces ◽  
Two Dimensional ◽  
Surface Versus ◽  
Deposition Conditions

ABSTRACTSurface and cross-section relief evolution of ferroelectric epitaxial (Ba,Sr)TiO3 films rf-sputtered on (001) HgO crystal cle-avage surface versus the oxygen worKing gas pressure P and subst-rate temperature T were studied. Specific features of both three-dimensional and two-dimensional epitaxy mechanisms corresponding to various deposition conditions were revealed. Difference between low and high P-T-value 3D epitaxy was established. The deposition of films with mirror-smooth surfaces and perfect interfaces is shown to be possible.

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