Influence of reactive sputter deposition conditions on crystallization of zirconium oxide thin films

2009 ◽  
Vol 27 (3) ◽  
pp. 577-583 ◽  
Author(s):  
Guneet Sethi ◽  
Paul Sunal ◽  
Mark W. Horn ◽  
Michael T. Lanagan
Keyword(s):  
Thin Films ◽  
Zirconium Oxide ◽  
Sputter Deposition ◽  
Oxide Thin Films ◽  
Reactive Sputter Deposition ◽  
Deposition Conditions

Reactive sputter deposition of nickel oxide thin films at liquid nitrogen temperature

2017 ◽  
Vol 56 (8) ◽  
pp. 088004 ◽  
Author(s):  
Yoshio Abe ◽  
Shun Yamauchi ◽  
Midori Kawamura ◽  
Kyung Ho Kim ◽  
Takayuki Kiba ◽  
...  
Keyword(s):  
Thin Films ◽  
Nickel Oxide ◽  
Liquid Nitrogen ◽  
Liquid Nitrogen Temperature ◽  
Sputter Deposition ◽  
Oxide Thin Films ◽  
Reactive Sputter Deposition ◽  
Nickel Oxide Thin Films

The bonding of diethyl ether, ethanol and their fluorinated analogs to zirconium oxide thin films

1991 ◽  
Vol 250 (1-3) ◽  
pp. A288
Author(s):  
V. Maurice ◽  
K. Takeuchi ◽  
M. Salmeron ◽  
G.A. Somorjai
Keyword(s):  
Thin Films ◽  
Diethyl Ether ◽  
Zirconium Oxide ◽  
Oxide Thin Films ◽  
Fluorinated Analogs

Effects of oxygen sources on properties of atomic-layer-deposited ferroelectric hafnium zirconium oxide thin films

2021 ◽  
Author(s):  
Ah-Jin Cho ◽  
Jihoon Jeon ◽  
Hong Keun Chung ◽  
In-Hwan Baek ◽  
Kun Yang ◽  
...  
Keyword(s):  
Thin Films ◽  
Zirconium Oxide ◽  
Atomic Layer ◽  
Oxide Thin Films

Application of ZnO to Passivate the GaN-based Device Structures

2007 ◽  
Vol 1035 ◽  
Author(s):  
Eliana Kaminska ◽  
Anna Piotrowska ◽  
Marie-Antoinette di Forte Poisson ◽  
Sylvain Delage ◽  
Hacene Lahreche ◽  
...  
Keyword(s):  
Thin Films ◽  
Sputter Deposition ◽  
High Resistivity ◽  
Leakage Currents ◽  
Gan Hemt ◽  
Reactive Sputter Deposition ◽  
Device Structures ◽  
Hygroscopic Nature ◽  
Output Characteristics ◽  
Lattice Matched

AbstractThe fabrication of high-resistivity ZnO-based thin films lattice-matched to AlGaN/GaN structures has been developed. It relies on low-temperature reactive sputter deposition of ZnO:Sb from ZnSb target. Taking into account the hygroscopic nature of ZnO surface, an additional coating by Si3N4 films is applied to ensure the humidity protecition. The developped passivation suppresses leakage currents in Schottky diods, and substantially improves output characteristics of AlGaN/GaN HEMT.

Reactive sputter deposition of crystalline Cr/C/F thin films

1994 ◽  
Vol 18 (5-6) ◽  
pp. 251-256 ◽  
Author(s):  
M.J. O'Keefe ◽  
J.M. Rigsbee
Keyword(s):  
Thin Films ◽  
Sputter Deposition ◽  
Reactive Sputter Deposition
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