The Effect of Hydrogen Dilution of the Gas Plasma on Glow Discharge a-Ge:H

1989 ◽  
Vol 149 ◽  
Author(s):  
W. A. Turner ◽  
S. J. Jones ◽  
Choochon Lee ◽  
S. M. Lee ◽  
Yuan-min Li ◽  
...  
Keyword(s):  
Glow Discharge ◽  
Electronic Properties ◽  
Silicon Germanium ◽  
Alloy System ◽  
Hydrogenated Silicon ◽  
Hydrogen Dilution ◽  
Gas Plasma ◽  
Deposition Parameters ◽  
Optical And Electronic Properties ◽  
Germanium Alloy

ABSTRACTA series of films of amorphous hydrogenated germanium has been produced using the r.f. glow discharge technique by varying the H2/GeH4 ratio in the gas plasma from 0 to 50 while keeping all other deposition parameters constant. Electronic, optical, and structural characterization has been performed. No significant changes in optical and electronic properties were observed for this range of dilution, in contrast to repeated reports on the hydrogenated silicon-germanium alloy system. However, small systematic changes in structure are observed using TEM techniques. We conclude that the observed differences are unimportant in determining the optical and electronic properties of this material.

Optical and electronic properties of an amorphous silicon‐germanium alloy with a 1.28 eV optical gap

1988 ◽  
Vol 52 (6) ◽  
pp. 477-479 ◽  
Author(s):  
J. Kolodzey ◽  
R. Schwarz ◽  
S. Aljishi ◽  
V. Chu ◽  
D.‐S. Shen ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Electronic Properties ◽  
Silicon Germanium ◽  
Optical Gap ◽  
Optical And Electronic Properties ◽  
Germanium Alloy ◽  
Amorphous Silicon Germanium

Microstructural and Radial Distribution Function Analysis of Hydrogenated Silicon, Germanium, and Silicon-Germanium Alloy Thin Films

2008 ◽  
Vol 14 (S2) ◽  
pp. 406-407
Author(s):  
DB Saint John ◽  
NJ Podraza ◽  
BD Gauntt ◽  
J Li ◽  
EC Dickey
Keyword(s):  
Thin Films ◽  
Distribution Function ◽  
New Mexico ◽  
Radial Distribution Function ◽  
Radial Distribution ◽  
Silicon Germanium ◽  
Function Analysis ◽  
Hydrogenated Silicon ◽  
Germanium Alloy

Extended abstract of a paper presented at Microscopy and Microanalysis 2008 in Albuquerque, New Mexico, USA, August 3 – August 7, 2008

Low Defect Density Microcrystalline-Si Deposited by the Hot Wire Technique

1998 ◽  
Vol 507 ◽  
Author(s):  
A. H. Mahan ◽  
M. Vanecek ◽  
A. Poruba ◽  
V. Vorlicek ◽  
R. S. Crandall ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Defect Density ◽  
Structural Data ◽  
Hot Wire ◽  
Very High Frequency ◽  
Deposition Parameters ◽  
Optical And Electronic Properties ◽  
High Filament ◽  
Si Films ◽  
Substrate Temperatures

ABSTRACTThe optical and electronic properties of a series of microcrystalline silicon (μ-Si) films, deposited by the hot wire (HW) technique, are reported. Preliminary results suggest, using moderate H2 /SiH4 dilution ratios and substrate temperatures (320°C), high filament temperatures, and no H gas purifier, that the subgap absorption for these films, measured using the constant photocurrent (CPM) method, can be as low as that obtained for films deposited by the very high frequency glow discharge (VHF-GD) technique. The film dark conductivities of the HW samples, ranging as low as 2.0 × 10−8 (ohm cm)−1, lend further credance to these low defect values. At the same time, the optical absorption in the region > 1.6 eV is higher than that previously observed for the VHF-GD deposited samples. The present results, discussed in the context of the film microcrystalline fraction, suggest that there is no unique, good quality, low defect density μ-Si material, and that different deposition techniques can be used to successfully deposit device quality gc-Si. We also present optical and structural data for films deposited at lower substrate temperatures and higher deposition rates, and suggest combinations of deposition parameters to be used that may further improve the electronic properties of these films.

Substrate Temperature Dependence of the Optical and Electronic Properties of Glow Discharge Produced a-Ge:H

1989 ◽  
Vol 149 ◽  
Author(s):  
Yuan- Min Li ◽  
Warren A. Turner ◽  
Choochon Lee ◽  
William Paul
Keyword(s):  
Glow Discharge ◽  
Substrate Temperature ◽  
Temperature Dependence ◽  
Electronic Properties ◽  
Dark Conductivity ◽  
Index Of Refraction ◽  
Atmospheric Contamination ◽  
Optical And Electronic Properties ◽  
Substrate Temperatures ◽  
Post Deposition

ABSTRACTGlow discharge a-Ge:H films produced at substrate temperatures (Tδ) between 50°C and 350°C, with and without a top a-Si:H capping layer, have been studied. The uncapped samples produced at Tδ < 250°C suffer severe post-deposition atmospheric contamination, resulting in orders of magnitude of unstable increase in both the photoresponse and dark conductivity. The capped samples, which have very much reduced immediate post-deposition contamination, show only small increases in the efficiency-mobility-lifetime product (ŋμτ) with increasing Tδ. This contrasts with the results of earlier similar studies on uncapped samples, which showed a peak in either the photoconductivity1 or the ratio of photoconductivity to dark conductivity2 for 150°C < Tδ < 2000C. We have also observed a decrease in the bandgap, a narrowing of the band-tails, an increase in the index of refraction, and a reduction of hydrogen content of the films with increasing Tδ.

Amorphous Hydrogenated Silicon P-I-N Solar Cells Grown from Hydrogen-Diluted Silane

1990 ◽  
Vol 192 ◽  
Author(s):  
Murray S Bennett ◽  
Jacob C Tu
Keyword(s):  
Solar Cells ◽  
Deposition Pressure ◽  
Hydrogenated Silicon ◽  
Hydrogen Dilution ◽  
Amorphous Hydrogenated Silicon ◽  
Deposition Parameters ◽  
Wide Range ◽  
The Stability ◽  
Made In ◽  
Deposition Conditions

ABSTRACTWe investigated p-i-n solar cells in which the i-layer was grown from hydrogen-diluted silane. The deposition parameters which were varied include flow rates, deposition pressure and power, and the degree of hydrogen dilution. We found that high quality devices could be made in which the i-layer was grown under a wide range of deposition conditions but that over this range neither the initial performance nor the stability of the devices differed significantly from those of cells having the same structure, but in which the i-layer was deposited from SiH4 with no H2-dilution.

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