Distribution of Gap States in Highly Photosensitive a-SiC:H
Keyword(s):
ABSTRACTThe effect of carbon incorporation into a-Si:H has been investigated in terms of gap states. The shallow and deep states are measured by a combination of two methods of the time-of-flight and the depletion discharge transient spectroscopy. The results show that the carbon incorporation of 10Z into a-Si:H leads to a slight increase in the conduction-band tail states and an extention of the deep states distribution. However, the increase in the shallow states affects little change in the electron transport properties. The origin of the deep states is also discussed.
2004 ◽
Vol 54
(S4)
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pp. 323-326
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2008 ◽
Vol 55
(2)
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pp. 649-654
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Keyword(s):
1996 ◽
Vol 65
(1)
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pp. 114-123
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