Development of Thermally Stable Indium-Based Ohmic Contacts to N-Type GaAs

1989 ◽  
Vol 148 ◽  
Author(s):  
Masanori Murakami ◽  
H. J. Kim ◽  
W. H. Price ◽  
M. Norcott ◽  
Y. C. Shih
Keyword(s):  
Electrical Properties ◽  
Integrated Circuits ◽  
High Performance ◽  
Ohmic Contacts ◽  
Interfacial Microstructure ◽  
Thermally Stable ◽  
Contact Materials ◽  
Low Resistance ◽  
Lift Off ◽  
Thermal Stability Of

ABSTRACTDevelopment of low resistance ohmic contacts to n-type GaAs which withstand high temperature cycles without degrading their electrical properties is crucial for fabrication of high performance GaAs integrated circuits. Prior to our work, indium-based ohmic contact materials were not attractive for actual devices, because the contacts provided resistances higher than those of the widely used AuNiGe contacts, were thermally unstable after contact formation, and had rough surface morphology. Recently, based on analysis of the interfacial microstructure of these contacts, several thermally stable, low resistance In-based ohmic contacts to n-type GaAs have been developed in our laboratories using a standard evaporation and lift-off technique and annealing by a rapid thermal annealing method. The present paper points out the reasons for the poor electrical properties and thermal stability of the “traditional” In-based ohmic contacts, and reviews the recent progress.

Formation of low-resistance and thermally stable Ohmic contacts to laser lift-off prepared N-polar n-GaN

2011 ◽  
Vol 9 (3-4) ◽  
pp. 527-529 ◽  
Author(s):  
Junjing Deng ◽  
Zhizhong Chen ◽  
Suyuan Wang ◽  
Feng Yu ◽  
Shengli Qi ◽  
...  
Keyword(s):  
Ohmic Contacts ◽  
Thermally Stable ◽  
Low Resistance ◽  
Lift Off

Thermally Stable, Low Resistance Indium-Based Ohmic Contacts to n and p-Type GaAs

1990 ◽  
Vol 181 ◽  
Author(s):  
Masanori Murakami ◽  
P.-E. Hallali ◽  
W. H. Price ◽  
M. Norcott ◽  
N. Lustig ◽  
...  
Keyword(s):  
Ohmic Contact ◽  
Ohmic Contacts ◽  
Interfacial Microstructure ◽  
Device Fabrication ◽  
Misfit Dislocations ◽  
Thermally Stable ◽  
Excellent Thermal Stability ◽  
Low Resistance ◽  
P Type ◽  
Contact Metal

ABSTRACTRecently, thermally stable, low resistance In-based ohmic contacts to n-type GaAs have been developed in our laboratories by depositing a small amount of In with refractory metals in a conventional evaporator, followed by rapid thermal annealing. By correlating the interfacial microstructure to the electrical properties, InxGa1-xAs phases grown epitaxially on the GaAs were found to be essential for reduction of the contact resistance (Rc). This low resistance was believed to be due to separation of the high barrier (φb) at the metal/GaAs contact into two low barriers at the metal/InxGa1-xAs and InxGa1-xAs/GaAs interfaces. In this paper the effects of the In concentration (x) in the InxGa1-xAs phases and addition of dopants to the contact metal are presented. High In concentration is desirable to reduce the φb at the metal/InxGa1-xAs interface. Such contacts were prepared by sputter-depositing InAs with other contact elements, but the low Rc values were not obtained. The reason was explained to be due to an increase in the φb at the InxGa1-xAs/GaAs interface due to the formation of misfit dislocations. However, addition of a small amount of Si to the contact metals reduced significantly the Rc value. This contact demonstrated excellent thermal stability: no deterioration was observed at 400°C for more than 100 hrs. In addition, the use of this Ni(Si)InW contact metal allowed us to fabricate the low resistance ohmic contacts by one-step (simultaneous) annealing for “implant-activation” and “ohmic contact formation”, which simplifies significantly GaAs device fabrication process steps. For p-type ohmic contacts, low resistance contacts were fabricated by depositing the same NilnW contact material to p-type GaAs. This contact was also thermally stable during subsequent annealing at 400°C. Within our knowledge this is believed to be the first demonstration of low resistance, thermally stable ohmic contact fabrication using the same materials for both n and p-type GaAs.

Low-resistance Cr/Al Ohmic contacts to N-polar n-type GaN for high-performance vertical light-emitting diodes

2012 ◽  
Vol 12 (1) ◽  
pp. 225-227 ◽  
Author(s):  
Joon-Woo Jeon ◽  
Sang Youl Lee ◽  
June O. Song ◽  
Tae-Yeon Seong
Keyword(s):  
High Performance ◽  
Ohmic Contacts ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Low Resistance

Comparison between Ni-SALICIDE and Self-Aligned Lift-Off Used in Fabrication of Ohmic Contacts for SiC Power MOSFET

2019 ◽  
Vol 963 ◽  
pp. 490-493
Author(s):  
Tomasz Sledziewski ◽  
Tobias Erlbacher ◽  
Anton Bauer ◽  
Lothar Frey ◽  
Xi Ming Chen ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Silicon Dioxide ◽  
Ohmic Contacts ◽  
Positive Impact ◽  
Specific Resistance ◽  
Power Mosfet ◽  
Interlayer Dielectric ◽  
Lift Off ◽  
P Type

A comparison between self-aligned process (using lift-off) and Ni-SALICIDE used in fabrication of ohmic contacts for SiC Power MOSFET is done. Both processes are demonstrated for 3.3 kV SiC VDMOS transistors fabricated on 100 mm substrates. It is shown that the Ni-SALICIDE process with first silicidation at 500 °C does not degrade the electrical properties of silicon dioxide; particularly, a degradation of the interlayer dielectric between source and gate is not evident. Additionally, this first silicidation is found to have a positive impact on the specific resistance of contacts formed on p-type SiC using NiAl2.6% as an ohmic metal.

scholarly journals Thermal stability of low-resistance Au Ohmic contacts to GeTe

2017 ◽  
Vol 621 ◽  
pp. 145-150 ◽  
Author(s):  
Haila M. Aldosari ◽  
Kayla A. Cooley ◽  
Shih-Ying Yu ◽  
Katherine C. Kragh-Buetow ◽  
Suzanne E. Mohney
Keyword(s):  
Thermal Stability ◽  
Ohmic Contacts ◽  
Low Resistance ◽  
Thermal Stability Of

scholarly journals Low-Resistance 2D/2D Ohmic Contacts: A Universal Approach to High-Performance WSe2, MoS2, and MoSe2 Transistors

Nano Letters ◽  
2016 ◽  
Vol 16 (3) ◽  
pp. 1896-1902 ◽  
Author(s):  
Hsun-Jen Chuang ◽  
Bhim Chamlagain ◽  
Michael Koehler ◽  
Meeghage Madusanka Perera ◽  
Jiaqiang Yan ◽  
...  
Keyword(s):  
High Performance ◽  
Ohmic Contacts ◽  
Low Resistance ◽  
Universal Approach

scholarly journals Formation of thermally stable low-resistance Ti/W/Au ohmic contacts on n-type GaN

2005 ◽  
Vol 81 (3) ◽  
pp. 561-564 ◽  
Author(s):  
V.R. Reddy ◽  
S.-H. Kim ◽  
T.-Y. Seong
Keyword(s):  
Ohmic Contacts ◽  
Thermally Stable ◽  
Low Resistance

Metallization scheme for highly low-resistance, transparent, and thermally stable Ohmic contacts to p-GaN

2000 ◽  
Vol 76 (20) ◽  
pp. 2898-2900 ◽  
Author(s):  
Ja-Soon Jang ◽  
Seong-Ju Park ◽  
Tae-Yeon Seong
Keyword(s):  
Ohmic Contacts ◽  
Thermally Stable ◽  
Low Resistance
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