Formation of low-resistance and thermally stable Ohmic contacts to laser lift-off prepared N-polar n-GaN

2011 ◽  
Vol 9 (3-4) ◽  
pp. 527-529 ◽  
Author(s):  
Junjing Deng ◽  
Zhizhong Chen ◽  
Suyuan Wang ◽  
Feng Yu ◽  
Shengli Qi ◽  
...  
Keyword(s):  
Ohmic Contacts ◽  
Thermally Stable ◽  
Low Resistance ◽  
Lift Off

Development of Thermally Stable Indium-Based Ohmic Contacts to N-Type GaAs

1989 ◽  
Vol 148 ◽  
Author(s):  
Masanori Murakami ◽  
H. J. Kim ◽  
W. H. Price ◽  
M. Norcott ◽  
Y. C. Shih
Keyword(s):  
Electrical Properties ◽  
Integrated Circuits ◽  
High Performance ◽  
Ohmic Contacts ◽  
Interfacial Microstructure ◽  
Thermally Stable ◽  
Contact Materials ◽  
Low Resistance ◽  
Lift Off ◽  
Thermal Stability Of

ABSTRACTDevelopment of low resistance ohmic contacts to n-type GaAs which withstand high temperature cycles without degrading their electrical properties is crucial for fabrication of high performance GaAs integrated circuits. Prior to our work, indium-based ohmic contact materials were not attractive for actual devices, because the contacts provided resistances higher than those of the widely used AuNiGe contacts, were thermally unstable after contact formation, and had rough surface morphology. Recently, based on analysis of the interfacial microstructure of these contacts, several thermally stable, low resistance In-based ohmic contacts to n-type GaAs have been developed in our laboratories using a standard evaporation and lift-off technique and annealing by a rapid thermal annealing method. The present paper points out the reasons for the poor electrical properties and thermal stability of the “traditional” In-based ohmic contacts, and reviews the recent progress.

scholarly journals Formation of thermally stable low-resistance Ti/W/Au ohmic contacts on n-type GaN

2005 ◽  
Vol 81 (3) ◽  
pp. 561-564 ◽  
Author(s):  
V.R. Reddy ◽  
S.-H. Kim ◽  
T.-Y. Seong
Keyword(s):  
Ohmic Contacts ◽  
Thermally Stable ◽  
Low Resistance

Metallization scheme for highly low-resistance, transparent, and thermally stable Ohmic contacts to p-GaN

2000 ◽  
Vol 76 (20) ◽  
pp. 2898-2900 ◽  
Author(s):  
Ja-Soon Jang ◽  
Seong-Ju Park ◽  
Tae-Yeon Seong
Keyword(s):  
Ohmic Contacts ◽  
Thermally Stable ◽  
Low Resistance

Thermally Stable and Low Resistance Re/Ti/Au Ohmic Contacts to n-ZnO

2005 ◽  
Vol 152 (3) ◽  
pp. G169 ◽  
Author(s):  
Sang-Ho Kim ◽  
Kyoung-Kook Kim ◽  
Seong-Ju Park ◽  
Tae-Yeon Seong
Keyword(s):  
Ohmic Contacts ◽  
Thermally Stable ◽  
Low Resistance

Structural and chemical analysis of Pd-Ge ohmic contacts to epitaxially lifted-off GaAs

1994 ◽  
Vol 52 ◽  
pp. 842-843
Author(s):  
R. Rajesh ◽  
J. Liu ◽  
H. Fathollahnejad ◽  
R. W. Carpenter ◽  
G. N. Maracas
Keyword(s):  
Low Temperature ◽  
Ohmic Contacts ◽  
Lattice Matching ◽  
Low Resistance ◽  
Gaas On Si ◽  
Low Temperature Annealing ◽  
Gaas Devices ◽  
Direct Lattice ◽  
Lift Off ◽  
Matching Criteria

For the past decade, there has been considerable focus on low resistance Pd-Ge ohmic contacts to GaAs. One approach toward achieving thermodynamically stable ohmic contacts is to consider solid-phasereactions for contacts, rather than the liquid phase interactions that occur upon ohmic alloying of Au-Ge-based systems. The two classifications to this approach are: low temperature annealing (<500°C), mainly using Pd, and high temperature annealing (<500°C), mainly using In. The low temperature annealing class is more compatible with existing GaAs technology, hence the attention to Pd-based systems, particularly Pd-Ge. There has also been tremendous interest in hybrid GaAs-on-Si technology. As an alternative to direct lattice-mismatched growth of GaAs on Si, the epitaxial lift-off (ELO) technique has been used, wherein GaAs devices grown on GaAs substrates can be removed and bonded to any substrate regardless of orientation and/or lattice matching criteria. This process yields high quality dislocation-free GaAs-based devices for hybrid applications.In this study, we demonstrate a low resistance non-alloyed Pd-Ge ohmic contact to epitaxialiy lifted-off n-type GaAs.

Low Resistance and Thermally Stable Pt/Ru Ohmic Contacts to p-Type GaN

2000 ◽  
Vol 180 (1) ◽  
pp. 103-107 ◽  
Author(s):  
Ja-Soon Jang ◽  
Seong-Ju Park ◽  
Tae-Yeon Seong
Keyword(s):  
Ohmic Contacts ◽  
Thermally Stable ◽  
Low Resistance ◽  
P Type

Thermally Stable and Low Resistance Ru Ohmic Contacts to n-ZnO

2002 ◽  
Vol 41 (Part 2, No. 5B) ◽  
pp. L546-L548 ◽  
Author(s):  
Han-Ki Kim ◽  
Kyoung-Kook Kim ◽  
Seong-Ju Park ◽  
Tae-Yeon Seong ◽  
Young Soo Yoon
Keyword(s):  
Ohmic Contacts ◽  
Thermally Stable ◽  
Low Resistance

Thermally stable, low‐resistance NiInW ohmic contacts ton‐type GaAs

1987 ◽  
Vol 51 (9) ◽  
pp. 664-666 ◽  
Author(s):  
Masanori Murakami ◽  
W. H. Price
Keyword(s):  
Ohmic Contacts ◽  
Thermally Stable ◽  
Low Resistance
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