Surface stoichiometry determination using reflection high-energy electron diffraction and atomic-layer epitaxy: The case of ZnTe(100)

B. Daudin; S. Tatarenko; D. Brun-Le Cunff

doi:10.1103/physrevb.52.7822

Surface stoichiometry determination using reflection high-energy electron diffraction and atomic-layer epitaxy: The case of ZnTe(100)

Physical Review B ◽

10.1103/physrevb.52.7822 ◽

1995 ◽

Vol 52 (11) ◽

pp. 7822-7825 ◽

Cited By ~ 28

Author(s):

B. Daudin ◽

S. Tatarenko ◽

D. Brun-Le Cunff

Keyword(s):

Electron Diffraction ◽

Atomic Layer ◽

High Energy ◽

Energy Electron ◽

Atomic Layer Epitaxy ◽

High Energy Electron

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Direct observation of GaAs atomic layer epitaxy by reflection high‐energy electron diffraction

Applied Physics Letters ◽

10.1063/1.101666 ◽

1989 ◽

Vol 55 (12) ◽

pp. 1244-1246 ◽

Cited By ~ 33

Author(s):

T. H. Chiu

Keyword(s):

Electron Diffraction ◽

Direct Observation ◽

Atomic Layer ◽

High Energy ◽

Energy Electron ◽

Atomic Layer Epitaxy ◽

High Energy Electron

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Observation of different reflected high-energy electron diffraction patterns during atomic layer epitaxy growth of CdTe epilayers

Journal of Crystal Growth ◽

10.1016/0022-0248(91)90829-t ◽

1991 ◽

Vol 115 (1-4) ◽

pp. 692-697 ◽

Cited By ~ 18

Author(s):

W. Faschinger ◽

P. Juza ◽

H. Sitter

Keyword(s):

Electron Diffraction ◽

Atomic Layer ◽

High Energy ◽

Energy Electron ◽

Atomic Layer Epitaxy ◽

High Energy Electron ◽

Diffraction Patterns

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Atomic‐layer epitaxy by a flux‐interruption and annealing method and the analysis of reflection high‐energy electron diffraction oscillation overshoot in the molecular‐beam epitaxy growth of GaAs

Journal of Applied Physics ◽

10.1063/1.352976 ◽

1993 ◽

Vol 73 (7) ◽

pp. 3291-3294 ◽

Cited By ~ 4

Author(s):

Kun‐jing Lee ◽

Joseph Ya‐min Lee ◽

Yu‐jeng Chang

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Diffraction ◽

Molecular Beam ◽

Atomic Layer ◽

High Energy ◽

Energy Electron ◽

Atomic Layer Epitaxy ◽

Molecular Beam Epitaxy Growth ◽

High Energy Electron ◽

Annealing Method

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Reflection High-Energy Electron Diffraction of Heteroepitaxy in Chemical Vapor Deposition Reactor: Atomic-Layer Epitaxy of GaAs, AlAs and GaP on Si

Japanese Journal of Applied Physics ◽

10.1143/jjap.32.1051 ◽

1993 ◽

Vol 32 (Part 1, No. 3A) ◽

pp. 1051-1055 ◽

Cited By ~ 8

Author(s):

Kuninori Kitahara ◽

Masashi Ozeki ◽

Kazuo Nakajima

Keyword(s):

Chemical Vapor Deposition ◽

Electron Diffraction ◽

Vapor Deposition ◽

Chemical Vapor ◽

Atomic Layer ◽

High Energy ◽

Energy Electron ◽

Atomic Layer Epitaxy ◽

High Energy Electron ◽

Chemical Vapor Deposition Reactor

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Real‐time study of the reflection high energy electron diffraction specular beam intensity during atomic layer epitaxy of GaAs

Applied Physics Letters ◽

10.1063/1.109293 ◽

1993 ◽

Vol 62 (20) ◽

pp. 2551-2553 ◽

Cited By ~ 3

Author(s):

B. Y. Maa ◽

P. D. Dapkus ◽

P. Chen ◽

A. Madhukar

Keyword(s):

Electron Diffraction ◽

Real Time ◽

Atomic Layer ◽

High Energy ◽

Beam Intensity ◽

Energy Electron ◽

Atomic Layer Epitaxy ◽

Time Study ◽

High Energy Electron

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Atomic layer epitaxy processes of ZnSe on GaAs(001) as observed by beam-rocking reflection high-energy electron diffraction (RHEED) and total-reflection-angle X-ray spectroscopy (TRAXS)

Journal of Crystal Growth ◽

10.1016/s0022-0248(98)01383-9 ◽

1999 ◽

Vol 201-202 ◽

pp. 490-493 ◽

Cited By ~ 5

Author(s):

Akihiro Ohtake ◽

Takashi Hanada ◽

Kenta Arai ◽

Takuji Komura ◽

Shiro Miwa ◽

...

Keyword(s):

Electron Diffraction ◽

Atomic Layer ◽

High Energy ◽

Total Reflection ◽

Energy Electron ◽

Atomic Layer Epitaxy ◽

High Energy Electron ◽

X Ray ◽

Reflection Angle

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Dynamic Reflection High-Energy Electron Diffraction Observations of the Atomic Layer Epitaxy Growth of Zn Chaleogenides

Japanese Journal of Applied Physics ◽

10.1143/jjap.25.l942 ◽

1986 ◽

Vol 25 (Part 2, No. 12) ◽

pp. L942-L944 ◽

Cited By ~ 14

Author(s):

Takafumi Yao

Keyword(s):

Electron Diffraction ◽

Atomic Layer ◽

High Energy ◽

Energy Electron ◽

Atomic Layer Epitaxy ◽

High Energy Electron ◽

Dynamic Reflection

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Atomic layer controlled doping by reflection high‐energy electron diffraction during epitaxial growth

Journal of Applied Physics ◽

10.1063/1.351036 ◽

1992 ◽

Vol 71 (6) ◽

pp. 2650-2654 ◽

Cited By ~ 1

Author(s):

Ziqiang Zhu ◽

Mitsuo Kawashima ◽

Takafumi Yao

Keyword(s):

Electron Diffraction ◽

Epitaxial Growth ◽

Atomic Layer ◽

High Energy ◽

Energy Electron ◽

High Energy Electron ◽

Controlled Doping

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Time-resolved reflection high energy electron diffraction analysis for atomic layer depositions of GaSb by molecular beam epitaxy

Journal of Crystal Growth ◽

10.1016/0022-0248(94)00509-5 ◽

1995 ◽

Vol 146 (1-4) ◽

pp. 349-353

Author(s):

Mitsuaki Yano ◽

Kazuhiko Yamamoto ◽

Takashige Utatsu ◽

Masataka Inoue

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Diffraction ◽

Diffraction Analysis ◽

Molecular Beam ◽

Atomic Layer ◽

High Energy ◽

Energy Electron ◽

Electron Diffraction Analysis ◽

High Energy Electron ◽

Time Resolved

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Molecular beam epitaxy/atomic layer epitaxy growth processes of wide‐band‐gap II–VI compounds: Characterization of surface stoichiometry by reflection high‐energy electron diffraction

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.576910 ◽

1990 ◽

Vol 8 (2) ◽

pp. 997-1001 ◽

Cited By ~ 23

Author(s):

T. Yao ◽

Z. Q. Zhu ◽

K. Uesugi ◽

S. Kamiyama ◽

M. Fujimoto

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Diffraction ◽

Molecular Beam ◽

Wide Band ◽

Atomic Layer ◽

High Energy ◽

Atomic Layer Epitaxy ◽

High Energy Electron ◽

Wide Band Gap

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