Photoelectronic Properties of Low Temperature GaAs Grown on Silicon and GaAs Substrates by Mbe

The characteristics of GaAs layers grown by MBE at growth temperatures from 200 °C to 400 °C have been evaluated by photoconductivity experiments in order to understand the photoelectronic properties of this material. Low temperature (LT) growth of GaAs on both silicon and GaAs substrates has been investigated in an attempt to better understand the nature of defects which are created in epitaxial layers grown under these conditions. Results from experiments on both annealed and unannealed LT samples indicate that the electronic transport properties of the epilayers can be controlled by selecting the appropriate growth conditions.