Low temperature electronic transport properties of boron carbide

1986 ◽  
Author(s):  
R. Kormann ◽  
L. Zuppiroli
Keyword(s):  
Low Temperature ◽  
Boron Carbide ◽  
Transport Properties ◽  
Electronic Transport ◽  
Electronic Transport Properties

scholarly journals Fabrication of graphene nanoribbons through mechanical cleavage and their electronic transport properties at low temperature

2011 ◽  
Vol 60 (10) ◽  
pp. 107302
Author(s):  
Ma Li ◽  
Tan Zhen-Bing ◽  
Tan Chang-Ling ◽  
Liu Guang-Tong ◽  
Yang Chang-Li ◽  
...  
Keyword(s):  
Low Temperature ◽  
Transport Properties ◽  
Electronic Transport ◽  
Graphene Nanoribbons ◽  
Electronic Transport Properties ◽  
Mechanical Cleavage

Low‐Temperature Electronic Transport Properties of Tl5Te3

1970 ◽  
Vol 41 (13) ◽  
pp. 5223-5226 ◽  
Author(s):  
E. Cruceanu ◽  
R. Lück ◽  
H. Schwarz
Keyword(s):  
Low Temperature ◽  
Transport Properties ◽  
Electronic Transport ◽  
Electronic Transport Properties

Photoelectronic Properties of Low Temperature GaAs Grown on Silicon and GaAs Substrates by Mbe

1989 ◽  
Vol 145 ◽  
Author(s):  
Raymond P. Mariella ◽  
Jeffrey D. Morse ◽  
Roger Aines ◽  
Charles E. Hunt
Keyword(s):  
Low Temperature ◽  
Transport Properties ◽  
Electronic Transport ◽  
Growth Conditions ◽  
Epitaxial Layers ◽  
Electronic Transport Properties ◽  
Gaas Substrates ◽  
Low Temperature Gaas

AbstractThe characteristics of GaAs layers grown by MBE at growth temperatures from 200 °C to 400 °C have been evaluated by photoconductivity experiments in order to understand the photoelectronic properties of this material. Low temperature (LT) growth of GaAs on both silicon and GaAs substrates has been investigated in an attempt to better understand the nature of defects which are created in epitaxial layers grown under these conditions. Results from experiments on both annealed and unannealed LT samples indicate that the electronic transport properties of the epilayers can be controlled by selecting the appropriate growth conditions.

Electronic transport properties of boron carbide within the homogeneity range

1991 ◽  
Author(s):  
H. Werheit ◽  
U. Kuhlmann ◽  
R. Franz ◽  
W. Winkelbauer ◽  
B. Herstell ◽  
...  
Keyword(s):  
Boron Carbide ◽  
Transport Properties ◽  
Electronic Transport ◽  
Homogeneity Range ◽  
Electronic Transport Properties

Low-temperature electronic transport properties of W, Mo, Ta, and Zr thin films

1989 ◽  
Vol 39 (14) ◽  
pp. 10009-10019 ◽  
Author(s):  
R. Rosenbaum ◽  
M. Ben-Shlomo ◽  
S. Goldsmith ◽  
R. L. Boxman
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Transport Properties ◽  
Electronic Transport ◽  
Electronic Transport Properties

ELECTRONIC TRANSPORT PROPERTIES OF SILICON NANOWIRE CAGE

2018 ◽  
Author(s):  
Shenqiu Mo ◽  
Dengke Ma ◽  
Lina Yang ◽  
Meng An ◽  
Zhiyu Liu ◽  
...  
Keyword(s):  
Transport Properties ◽  
Electronic Transport ◽  
Silicon Nanowire ◽  
Electronic Transport Properties

Improved thermoelectric transport properties of Ge4Se3Te through dimensionality reduction

2021 ◽  
Author(s):  
H. H. Huang ◽  
Xiaofeng Fan ◽  
Wei Tao Zheng ◽  
David J. Singh
Keyword(s):  
Dimensionality Reduction ◽  
Transport Properties ◽  
Electronic Transport ◽  
Thermoelectric Transport ◽  
Electronic Transport Properties ◽  
Thermoelectric Transport Properties

Layered semiconducting Ge4Se3Te shows unusual bonding that suggests the possibility of unusual transport that may be favorable for thermoelectrics. We investigated the electronic transport properties in relation to thermoelectricity of...

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