Large-Area Deposition of GaAs by Mocvd

1989 ◽  
Vol 145 ◽  
Author(s):  
James T. Daly ◽  
Carson B. Roberts
Keyword(s):  
Growth Process ◽  
Large Scale ◽  
Computer Modelling ◽  
Growth Conditions ◽  
Large Area ◽  
Mocvd Reactor ◽  
Production Environments ◽  
Modelling Studies ◽  
Highly Uniform ◽  
Area Deposition

AbstractA new, large-scale, barrel-type MOCVD reactor which is capable of pro- ducing seven 3-inch wafers or fourteen 2-inch wafers at a time has been developed. Experiments and computer modelling studies of this geometry have been performed. The physical and electronic properties of n-type GaAs as a function of growth conditions are presented. Through the use of experimental design methods, the growth process has been optimized to yield highly uniform growth rates. The demonstrated uniformity supports the use of this reactor for production environments requiring 3-inch wafers.

Microwave PECVD of Micro-Crystalline Silicon

2002 ◽  
Vol 715 ◽  
Author(s):  
Wim Soppe ◽  
Camile Devilee ◽  
Sacha Schiermeier ◽  
Harry Donker ◽  
J.K. Rath
Keyword(s):  
Large Scale ◽  
Gas Flow ◽  
Microwave Plasma ◽  
Crystalline Silicon ◽  
Plasma Source ◽  
Growth Conditions ◽  
Scale Production ◽  
Large Area ◽  
Deposition Rates ◽  
Microwave Source

AbstractThe deposition of micro-crystalline silicon by means of PECVD with a new linear microwave plasma source is investigated. This plasma source has successfully been introduced in the large scale production of multi-crystalline Si solar cells for the deposition of passivating silicon nitride layers. Advantages of this linear plasma source are the high deposition rates and the large area (up to 80 cm width, no length limitations) on which a homogeneous deposition can be achieved. Since this source has not been applied for deposition of micro-crystalline silicon before, we explored a large parameter space (substrate temperature, pressure, MW-power, gas flow rates), in order to find optimum growth conditions. It is observed that with this microwave source it is possible to grow micro-crystalline layers at significantly higher silane/hydrogen ratios and higher deposition rates than for conventional RF PECVD. In this paper, structural properties of the silicon layers, as investigated by Raman and FTIR spectroscopy, XRD and SEM measurements are discussed.

Large Area Multi-wafer MOCVD of Transparent and Conducting ZnO Films

2006 ◽  
Vol 957 ◽  
Author(s):  
Gary S. Tompa ◽  
S. Sun ◽  
L. G. Provost ◽  
Dan Mentel ◽  
D. Sugrim ◽  
...  
Keyword(s):  
Thin Film ◽  
Large Scale ◽  
Zno Films ◽  
Zno Thin Film ◽  
Large Area ◽  
Light Emitters ◽  
Mocvd Reactor ◽  
Tool Performance ◽  
Design Challenges ◽  
Thin Film Production

ABSTRACTZnO thin films are of interest for an array of applications, including: light emitters, photovoltaics, sensors and transparent contacts, among others. Production routes for ZnO include sputtering, MBE and MOCVD. This paper focuses on our efforts to produce a large scale MOCVD thin film production tool and the results obtained from the reactor. Specifically, we have constructed a tool with a 16” wafer carrier that uniformly deposits ZnO films on 38×2” wafers simultaneously. The reactor operates at low pressure (<0.1 Atmosphere) and through 700°C. High quality, uniform films have been deposited on an array of substrates. Al-doped films exhibited resisitivities in the 1×10-3 ohm-cm range and transmissivity greater than 80%. Film morphology and crystallinity are a function of process parameters. The large area oxide MOCVD reactor design challenges and results are summarized. Tool performance and ZnO thin film quality are reviewed, as well as preliminary ZnO contact performance on GaN LEDs.

scholarly journals Rapid Single Image-Based DTM Estimation from ExoMars TGO CaSSIS Images Using Generative Adversarial U-Nets

2021 ◽  
Vol 13 (15) ◽  
pp. 2877
Author(s):  
Yu Tao ◽  
Siting Xiong ◽  
Susan J. Conway ◽  
Jan-Peter Muller ◽  
Anthony Guimpier ◽  
...  
Keyword(s):  
High Resolution ◽  
Large Scale ◽  
Imaging System ◽  
Landing Site ◽  
Parameter Tuning ◽  
Processing Parameters ◽  
Input Image ◽  
Large Area ◽  
Laser Altimeter ◽  
Imaging Science

The lack of adequate stereo coverage and where available, lengthy processing time, various artefacts, and unsatisfactory quality and complexity of automating the selection of the best set of processing parameters, have long been big barriers for large-area planetary 3D mapping. In this paper, we propose a deep learning-based solution, called MADNet (Multi-scale generative Adversarial u-net with Dense convolutional and up-projection blocks), that avoids or resolves all of the above issues. We demonstrate the wide applicability of this technique with the ExoMars Trace Gas Orbiter Colour and Stereo Surface Imaging System (CaSSIS) 4.6 m/pixel images on Mars. Only a single input image and a coarse global 3D reference are required, without knowing any camera models or imaging parameters, to produce high-quality and high-resolution full-strip Digital Terrain Models (DTMs) in a few seconds. In this paper, we discuss technical details of the MADNet system and provide detailed comparisons and assessments of the results. The resultant MADNet 8 m/pixel CaSSIS DTMs are qualitatively very similar to the 1 m/pixel HiRISE DTMs. The resultant MADNet CaSSIS DTMs display excellent agreement with nested Mars Reconnaissance Orbiter Context Camera (CTX), Mars Express’s High-Resolution Stereo Camera (HRSC), and Mars Orbiter Laser Altimeter (MOLA) DTMs at large-scale, and meanwhile, show fairly good correlation with the High-Resolution Imaging Science Experiment (HiRISE) DTMs for fine-scale details. In addition, we show how MADNet outperforms traditional photogrammetric methods, both on speed and quality, for other datasets like HRSC, CTX, and HiRISE, without any parameter tuning or re-training of the model. We demonstrate the results for Oxia Planum (the landing site of the European Space Agency’s Rosalind Franklin ExoMars rover 2023) and a couple of sites of high scientific interest.

scholarly journals Xanthones Production in Gentiana dinarica Beck Hairy Root Cultures Grown in Simple Bioreactors

Plants ◽  
2021 ◽  
Vol 10 (8) ◽  
pp. 1610
Author(s):  
Branka Vinterhalter ◽  
Nevena Banjac ◽  
Dragan Vinterhalter ◽  
Dijana Krstić-Milošević
Keyword(s):  
Hairy Root ◽  
Large Scale ◽  
Bubble Column ◽  
Growth Parameters ◽  
Growth Index ◽  
Dry Weight ◽  
Growth Conditions ◽  
Good Growth ◽  
Gentiana Dinarica ◽  
Hairy Root Clones

The hairy root clones of Gentiana dinarica cl-B, cl-D, cl-3, and cl-14 were cultivated in parallel in diverse simple bioreactors, including temporary immersion systems RITA® (TIS RITA®), bubble column bioreactors (BCB), and Erlenmeyer flasks (EF), and evaluated for biomass production and xanthone content. The obtained results showed that TIS RITA® and BCB containing ½ MS medium with 4% sucrose provided equally good growth conditions in which the majority of the clones displayed the higher percentage of dry matter (DM%), and xanthones norswertianin-1-O-primeveroside (nor-1-O-prim) and norswertianin production than those cultivated in EF. Thin and well branched hairy root clone cl-B grown in BCB for 7 weeks was superior regarding all growth parameters tested, including growth index (19.97), dry weight (2.88 g), and DM% (25.70%) compared to all other clones. Cl-B cultured in TIS RITA® contained the highest amount of nor-1-O-prim (56.82 mg per vessel). In BCB with constant aeration, cl-B accumulated the highest norswertianin content reaching 18.08 mg/vessel. The optimized conditions for cultivation of selected G. dinarica hairy root clones in highly aerated TIS RITA® and BCB systems contribute to the development of bioreactor technology designed for the large scale commercial production of xanthones nor-1-O-prim and norswertianin.

scholarly journals Efficient and large-area all vacuum-deposited perovskite light-emitting diodes via spatial confinement

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Peipei Du ◽  
Jinghui Li ◽  
Liang Wang ◽  
Liang Sun ◽  
Xi Wang ◽  
...  
Keyword(s):  
High Resolution ◽  
Large Scale ◽  
High Efficiency ◽  
Light Emitting Diodes ◽  
Scale Production ◽  
Nonradiative Recombination ◽  
Large Area ◽  
Spatial Confinement ◽  
Light Emitting ◽  
Large Scale Production

AbstractWith rapid advances of perovskite light-emitting diodes (PeLEDs), the large-scale fabrication of patterned PeLEDs towards display panels is of increasing importance. However, most state-of-the-art PeLEDs are fabricated by solution-processed techniques, which are difficult to simultaneously achieve high-resolution pixels and large-scale production. To this end, we construct efficient CsPbBr3 PeLEDs employing a vacuum deposition technique, which has been demonstrated as the most successful route for commercial organic LED displays. By carefully controlling the strength of the spatial confinement in CsPbBr3 film, its radiative recombination is greatly enhanced while the nonradiative recombination is suppressed. As a result, the external quantum efficiency (EQE) of thermally evaporated PeLED reaches 8.0%, a record for vacuum processed PeLEDs. Benefitting from the excellent uniformity and scalability of the thermal evaporation, we demonstrate PeLED with a functional area up to 40.2 cm2 and a peak EQE of 7.1%, representing one of the most efficient large-area PeLEDs. We further achieve high-resolution patterned perovskite film with 100 μm pixels using fine metal masks, laying the foundation for potential display applications. We believe the strategy of confinement strength regulation in thermally evaporated perovskites provides an effective way to process high-efficiency and large-area PeLEDs towards commercial display panels.

Pattern Writing by Implantation in a Large-Scale PSII System With Planar Inductively Coupled Plasma Source

2000 ◽  
Vol 624 ◽  
Author(s):  
Lingling Wu ◽  
Hongjun Gao ◽  
Dennis M. Manos
Keyword(s):  
Inductively Coupled Plasma ◽  
Large Scale ◽  
Lateral Diffusion ◽  
Plasma Source ◽  
Direct Writing ◽  
Large Area ◽  
Depth Profiles ◽  
Geometric Patterns ◽  
Planar Coil ◽  
Rf Antenna

ABSTRACTA large-scale plasma source immersion ion implantation (PSII) system with planar coil RFI plasma source has been used to study an inkless, deposition-free, mask-based surface conversion patterning as an alternative to direct writing techniques on large-area substrates by implantation. The apparatus has a 0.61 m ID and 0.51 m tall chamber, with a base pressure in the 10−8 Torr range, making it one of the largest PSII presently available. The system uses a 0.43 m ID planar rf antenna to produce dense plasma capable of large-area, uniform materials treatment. Metallic and semiconductor samples have been implanted through masks to produce small geometric patterns of interest for device manufacturing. Si gratings were also implanted to study application to smaller features. Samples are characterized by AES, TEM and variable-angle spectroscopic ellipsometry. Composition depth profiles obtained by AES and VASE are compared. Measured lateral and depth profiles are compared to the mask features to assess lateral diffusion, pattern transfer fidelity, and wall-effects. The paper also presents the results of MAGIC calculations of the flux and angle of ion trajectories through the boundary layer predicting the magnitude of flux as a function of 3-D location on objects in the expanding sheath

Polymer-nanoimprinting route for the construction of large-area Au@Ag plasmonic arrays using as highly-uniform SERS platforms

2021 ◽  
Vol 121 ◽  
pp. 111532
Author(s):  
Wenkuan Che ◽  
Jing Wu ◽  
Mingfei Cheng ◽  
Lu Xu ◽  
Jinghuai Fang
Keyword(s):  
Large Area ◽  
Highly Uniform
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