Fabrication of III-V Semiconductor Quantum Dots in Porous Glass.

1988 ◽  
Vol 144 ◽  
Author(s):  
John C. Luong ◽  
Nicholas F. Borrelli

ABSTRACTSpatially quantized systems of III–V compounds have, in recent years, attracted considerable theoretical interest. However, the fabrication of quantum dots, a three-dimensionally quantum-confined microstructure, is particularly cumbersome and requires sophisticated lateral patterning techniques. A method, reported recently, which utilizes the microporosity of Vycor brand porous glass to produce quantum-confined microcrystals of II–VI and IV–VI semiconductors, is now extended to the fabrication of III–V quantum dots, by incorporating a microwave plasma assisted MOCVD technique. In this process, organometallic precursors impregnated in porous glass can be effectively cracked to deposit III–V microcrystals in glass. The results are discussed in light of the quantum size effect manifested by the optical absorption and photoluminescence data.

2002 ◽  
Vol 12 (01) ◽  
pp. 15-43 ◽  
Author(s):  
ANDREW J. WILLIAMSON

We describe a procedure for calculating the electronic structure of semiconductor quantum dots containing over one million atoms. The single particle electron levels are calculated by solving a Hamiltonian constructed from screened atomic pseudopotentials. Effects beyond the single particle level such as electron and hole exchange and correlation interactions are described using a configuration interaction (CI) approach. Application of these methods to the calculation of the optical absorption spectrum, Coulomb repulsions and multi-exciton binding energies of InGaAs self-assembled quantum dots are presented.


1998 ◽  
Vol 32 (11) ◽  
pp. 1229-1233 ◽  
Author(s):  
M. I. Vasilevskii ◽  
E. I. Akinkina ◽  
A. M. de Paula ◽  
E. V. Anda

1993 ◽  
Vol 47 (12) ◽  
pp. 7132-7139 ◽  
Author(s):  
Lavanya M. Ramaniah ◽  
Selvakumar V. Nair

2002 ◽  
Vol 92 (12) ◽  
pp. 7149-7152 ◽  
Author(s):  
D. Mohanta ◽  
S. S. Nath ◽  
A. Bordoloi ◽  
A. Choudhury ◽  
S. K. Dolui ◽  
...  

1995 ◽  
Vol 52 (8) ◽  
pp. 5913-5922 ◽  
Author(s):  
G. W. Wen ◽  
J. Y. Lin ◽  
H. X. Jiang ◽  
Z. Chen

1990 ◽  
Vol 04 (16) ◽  
pp. 1009-1016 ◽  
Author(s):  
Y.Z. HU ◽  
S.W. KOCH ◽  
D.B. TRAN THOAI

Coulomb and quantum confinement effects in small semiconductor microcrystallites are analyzed. Energies and wavefunctions for one- and two-electron-hole-pair states are computed and optical absorption spectra are evaluated.


2001 ◽  
Vol 676 ◽  
Author(s):  
Michael S. Wong ◽  
Galen D. Stucky

ABSTRACTCurrent synthetic techniques to high-quality quantum dots (“QD's”) involve organometallic precursors that are hazardous and expensive and require they be rapidly injected into an extremely hot solvent to form the QD's. A new method for synthesizing high-quality CdSe QD's while circumventing these problems has been developed. Different cadmium salts were studied as Cd precursors alternative to dimethylcadmium. High-quality CdSe QD's were found possible with cadmium acetate as the Cd precursor. Changes in solvent temperature and reaction time had a systematic effect on QD particle sizes and the accompanying optical properties. These preliminary results point to a general method for producing high-quality QD's that is safer and much more versatile.


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