Optical absorption study of 100-MeV chlorine ion-irradiated hydroxyl-free ZnO semiconductor quantum dots

2002 ◽  
Vol 92 (12) ◽  
pp. 7149-7152 ◽  
Author(s):  
D. Mohanta ◽  
S. S. Nath ◽  
A. Bordoloi ◽  
A. Choudhury ◽  
S. K. Dolui ◽  
...  
1996 ◽  
Vol 198 (1) ◽  
pp. 533-537 ◽  
Author(s):  
Z. V. Popović ◽  
M. Holtz ◽  
K. Reimann ◽  
K. Syassen

2020 ◽  
Vol 100 ◽  
pp. 106064
Author(s):  
Subhendu Jana ◽  
Gopabandhu Panigrahi ◽  
S. Narayanswamy ◽  
Mohd Ishtiyak ◽  
Manajit Das ◽  
...  

1996 ◽  
Vol 197 (1) ◽  
pp. 241-250 ◽  
Author(s):  
S. B. Ubizskii ◽  
D. I. Savytskii ◽  
A. O. Matkovskii ◽  
A. Gloubokov ◽  
A. Pajaczkowska

2002 ◽  
Vol 12 (01) ◽  
pp. 15-43 ◽  
Author(s):  
ANDREW J. WILLIAMSON

We describe a procedure for calculating the electronic structure of semiconductor quantum dots containing over one million atoms. The single particle electron levels are calculated by solving a Hamiltonian constructed from screened atomic pseudopotentials. Effects beyond the single particle level such as electron and hole exchange and correlation interactions are described using a configuration interaction (CI) approach. Application of these methods to the calculation of the optical absorption spectrum, Coulomb repulsions and multi-exciton binding energies of InGaAs self-assembled quantum dots are presented.


2012 ◽  
Vol 116 (30) ◽  
pp. 16161-16166 ◽  
Author(s):  
Shin G. Chou ◽  
Paul E. Stutzman ◽  
Shuangzhen Wang ◽  
Edward J. Garboczi ◽  
William F. Egelhoff ◽  
...  

1995 ◽  
Vol 7 (21) ◽  
pp. 4175-4181 ◽  
Author(s):  
J K Huang ◽  
Y S Huang ◽  
T R Yang

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